BRCS80N03DP

BRCS80N03DP Rev.D Mar.-2020 DATA SHEET 描述 / Descriptions N 沟道 TO-252 塑封封装场效应管。 N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 具有低导通电阻的超高密度设计，表面贴装封装。无卤产品。 Super high dense cell design for low RDS(on),Rugged and reliable,surface mount package. Halogen-free Product. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 4 1 2 3 PIN1：G PIN 2：D PIN 3：S PIN 4：D 放大及印章代码 / hFE Classifications & Marking 见印章说明。See Marking Instructions. http://www.fsbrec.com 1/8 BRCS80N03DP Rev.D Mar.-2020 极限参数 / DATA SHEET Absolute Maximum Ratings(Ta=25℃) 参数 Parameter Drain-Source Voltage 符号 Symbol VDSS 数值 Rating 30 单位 Unit V ID(Tc=25℃) 80 A IDM 300 A Gate-Source Voltage VGSS ±20 V Single Pulsed Avalanche Energy EAS 211 mJ Avalanche Current IAS 23 A Power Dissipation PD(Tc=25℃) 90 W TJ,Tstg -55 to 150 ℃ Drain Current Drain Current - Pulsed Operating and Storage Temperature Range Junction-to-Ambient t≤10 Junction-to-Ambient Steady-State Junction-to-Case Steady-State http://www.fsbrec.com RθJA RθJC 18 45 ℃/W 1.38 2/8 BRCS80N03DP Rev.D Mar.-2020 DATA SHEET 电性能参数 / Electrical Characteristics(Ta=25℃) 参数 Parameter Drain-Source Breakdown Voltage 符号 测试条件 Symbol Test Conditions BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(on) Drain-Source Diode Forward Voltage Input Capacitance 最小值 典型值 最大值 单位 Min Typ Max Unit 30 V IDSS VDS=30V VGS=0V 1 μA IGSS VGS=±20V VDS=0V ±0.1 μA VDS=VGS ID=250μA 1.7 2.5 V VGS=10V ID=70A 4.8 6.5 mΩ VGS=4.5V ID=35A 7.0 9 mΩ VGS=0V IS=10A 1.2 V VDS=25V f=1.0MHz VGS=0V VSD Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) 1.0 2090 790 pF 634 VGS=0V f=1MHz VGS=10V ID=20A VDS=0V VDS=15V 1.9 30 42 14 20 Gate Source Charge Qgs Gate Drain Charge Qgd 6.3 Turn-On Delay Time td(on) 8 Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD=10V RL=0.75Ω Ω 5.1 VDS=15V RGEN=3Ω 4 nC ns 29 Turn-Off Fall Time tf Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr IF=20A,dl/dt=500A/us 16.5 ns Qrr IF=20A,dl/dt=500A/us 34.2 nC http://www.fsbrec.com 5.5 3/8 BRCS80N03DP Rev.D Mar.-2020 DATA SHEET 电参数曲线图 / Electrical Characteristic Curve http://www.fsbrec.com 4/8 BRCS80N03DP Rev.D Mar.-2020 DATA SHEET 电参数曲线图 / Electrical Characteristic Curve http://www.fsbrec.com 5/8 BRCS80N03DP Rev.D Mar.-2020 DATA SHEET 外形尺寸图 / Package Dimensions http://www.fsbrec.com 6/8 BRCS80N03DP Rev.D Mar.-2020 DATA SHEET 印章说明 / Marking Instructions BR 80N03 **** 说明： BR： 为公司代码 80N03： 为型号代码 ****： 为生产批号代码，随生产批号变化 Note: BR: Company Code. 80N03: Product Type Code. ****: Lot No. Code, code change with Lot No. http://www.fsbrec.com 7/8 BRCS80N03DP Rev.D Mar.-2020 DATA SHEET 回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free) 说明： Note: 1、预热温度 150～180℃，时间 60～90sec; 1.Preheating:150~180℃, Time:60~90sec. 2、峰值温度 245±5℃，时间持续为 5±0.5sec; 2.Peak Temp.:245±5℃, Duration:5±0.5sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：260±5℃ 时间：10±1 sec. Temp.:260±5℃ Time:10±1 sec 包装规格 / Packaging SPEC. 卷盘包装 / REEL Package Type 封装形式 TO-252 Dimension 包装尺寸 (unit：mm3) Units 包装数量 Units/Reel 只/卷盘 Reels/Inner Box 卷盘/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Reel Inner Box 盒 Outer Box 箱 2,500 2 5,000 5 25,000 13〞×16 360×360×50 385×257×392 套管包装 / TUBE Package Type 封装形式 TO-251/252 Dimension 包装尺寸 (unit：mm3) Units 包装数量 Units/Tube 只/套管 Tubes/Inner Box 套管/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Tube 套管 Inner Box 盒 Outer Box 箱 75 48 3,600 5 18,000 526×20.5×5.25 555×164×50 575×290×180 使用说明 / Notices http://www.fsbrec.com 8/8