PMV213SN

PMV213SN N-CHANNEL MOSFET FOR SWITCHING SOT-23 Ƶ Features Unit : mm ƽ VDS (V) = 100V 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ƽ ID = 3 A 1 MI JS 0.55 ƽ RDS(ON) ˘ 260 mȍ (VGS = 4.5V) +0.2 1.3 -0.1 +0.2 2.8 -0.1 ƽ RDS(ON) ˘ 220 mȍ (VGS = 10V) 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1.1 +0.2 -0.1 D 1. Gate 0-0.1 O CR G +0.1 0.68 -0.1 2. Source 3. Drain S mi Se Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted) nd co Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Rating VDS 100 VGS ±20 ID 3 IDM 20 PD Thermal Resistance Junction- to-Ambient (Note 2) V A 1.5 W 100 ć/W r to Junction Temperature Storage Temperature Range RthJA Unit uc Pulsed Drain Current (Note 1) Symbol TJ 150 Tstg -55 to 150 ć Marking Marking KX W2N ** www.jsmsemi.com 第１／４页 PMV213SN N-CHANNEL MOSFET FOR SWITCHING Ƶ Electrical Characteristics (TA = 25ć unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250ȝA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 ȝA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA VGS(th) VDS=VGS , ID=250ȝA 2 V Gate Threshold Voltage (Note 3) MI JS Static Drain-Source On-Resistance (Note 3) RDS(On) Forward Transconductance (Note 3) gFS Input Capacitance Ciss O CR Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, ID=3A 220 VGS=4.5V, ID=3A 260 VDS=5V, ID=3A 5 VGS=0V, VDS=50V, f=1MHz (Note 4) 20 VGS=10V, VDS=50V, ID=3A (Note 4) 6 4 VGS=10V, VDD=50V, RL=19ȍ, RG=3ȍ (Note 4) Notes: ns 20 4 nd co VSD nC 2.1 f Diode Forward Voltage (Note 3) pF 20 3.3 IS S 24 Qgd td(off) mȍ 650 td(on) tr Body-Diode Forward Current (Note 2) V 1 mi Se Gate Drain Charge Qgs 100 IS=3A,VGS=0V 3 A 1.2 V 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. Pulse Test: Pulse Width İ 300ȝs, Duty Cycle İ 2%. www.jsmsemi.com r to 4. Guaranteed by design, not subject to production. uc 2 . Surface Mounted on FR4 Board, t İ 10 sec. 第２／４页 PMV213SN N-CHANNEL MOSFET FOR SWITCHING Normalized On-Resistance O CR MI JS ID- Drain Current (A) Ƶ Typical Characterisitics and Thermal Characteristics (Curves) TJ-Junction Temperature(ć) Vds Drain-Source Voltage (V) Figure 1 Output Characteristics Figure 4 Rdson-JunctionTemperature uc nd co ID- Drain Current (A) Vgs Gate-Source Voltage (V) mi Se Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 5 Gate Charge Is- Reverse Drain Current (A) r to Rdson On-Resistance(¡) Figure 2 Transfer Characteristics ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward www.jsmsemi.com 第３／４页 PMV213SN ID- Drain Current (A) MI JS C Capacitance (nF) N-CHANNEL MOSFET FOR SWITCHING TJ-Junction Temperature(ć) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(ć) Figure 10 Power De-rating r(t),Normalized Effective Transient Thermal Impedance r to uc Figure 8 Safe Operation Area nd co mi Se Power Dissipation (w) O CR Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.jsmsemi.com 第４／４页