MEM2310M3G

MEM2310 N-Channel MOSFET MEM2310M3 General Description Features MEM2310M3G Series N-channel enhancement mode  30V/5.8A field-effect transistor ,produced with high cell density RDS(ON) =25mΩ@ VGS=10V, ID=5.8A DMOS trench technology, which is especially used to RDS(ON) =28mΩ@ VGS=4.5V, ID=5A minimize on-state resistance. This device particularly RDS(ON) =37mΩ@ VGS=2.5V, ID=4A suits low voltage applications, and low power  High Density Cell Design For Ultra Low On-Resistance dissipation in a very small outline surface mount  Subminiature surface mount package:SOT23-3L package. Pin Configuration Typical Application  Battery management  High speed switch  Low power DC to DC converter Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 30V V Gate-Source Voltage VGSS ±12 V Drain Current TA=25℃ TA=70℃ Pulsed Drain Current1,2 Total Power Dissipation TA=25℃ TA=70℃ ID IDM Pd 5.8 4.9 30 1.4 1 A A W operating junction temperature Tj 150 ℃ Storage Temperature Range Tstg -65/150 ℃ V6.0 www.microne.com.cn 1 MEM2310 Thermal Characteristics Parameter Symbol TYP. MAX. Unit Thermal Resistance,Junction-to-Ambient t≤10s RθJA 65 90 ℃/W Thermal Resistance, Junction-to-Ambient Steady-State RθJA 85 125 ℃/W Thermal Resistance,Junction-to-Lead Steady-State RθJL 43 60 ℃/W Min Type Max Unit Electrical Characteristics MEM2310M3 Parameter Symbol Test Condition Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 30 35 Gate Threshold Voltage VGS(th) VDS= VGS, ID=250uA 0.7 0.88 1.4 V Gate-Body Leakage IGSS VDS=0V，VGS=12V 0.5 100 nA VDS=0V，VGS=-12V -0.2 -100 nA Zero Gate Voltage Drain Current IDSS 1000 nA Static Drain-Source On-Resistance RDS(ON) Forward Transconductance gFS Maximum Body-Diode Continuous Current Is Source-drain (diode forward) voltage VSD VDS=24V VGS=0V V VGS=10V, ID=5.8A 25 30 mΩ VGS=4.5V, ID=5A 28 33 mΩ VGS=2.5V, ID=4A 37 50 mΩ VDS = 5 V, ID = 5A VGS=0V,IS=1A 10 15 S 2.5 A 0.72 1.0 V 823 1030 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg VDS = 15 V, VGS = 0 V, f = 1 MHz VGS=0V, VDS=0V, f=1MHz pF 99 77 1.2 3.6 7 14 15 30 38 76 3 6 11 14.3 1.6 2.08 2.8 3.64 Ω Switching Characteristics Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall-Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD = 15 V, RL = 2.7Ω VGEN = 10V, Rg = 3 Ω VDS = 15 V, VGS = 4.5 V, ID = 5.8A ns nc 1、Repetitive rating, pulse width limited by junction temperature. 2、Pulse width