MEM4N60A3G

MEM4N60 N-CHANNEL POWER MOSFET MEM4N60 General Description Features  Switching regulator application.  600V，4A  High voltage and high speed.  RDS(ON)=2.3Ω@VGS=10V  LOW CRSS  Switching application.  FAST SWITCHING  PACKAGE :TO251,TO251S,TO252,TO-220F Pin Configuration MEM4N60THDG MEM4N60THG MEM4N60K3G MEM4N60A3G Maximum Ratings (Ta=25℃) Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 600V V Gate-Source Voltage VGSS ±30 V Drain Current TA=25℃ TA=100℃ Pulsed Drain Current1,2 Total Power Dissipation TA=25℃ 4 ID IDM Pd A 2.4 16 A TO-251 41 TO-220F 33 TO-252 57 W Operating Temperature Range TOpr -55-150 ℃ Storage Temperature Range Tstg -55-150 ℃ V08 www.microne.com.cn Page 1 of 11 MEM4N60 Thermal Characteristics Parameter Symbol Thermal Resistance,Junction-to-Case RθJC Package TYP TO-220F 3.8 TO-252 2.2 Unit ℃/W Electrical Characteristics Parameter Symbol Test Condition Min Type Max Unit VGS=0V, ID=250uA 600 650 - V VDS= VGS, ID=250uA 2.0 2.8 4.0 V VDS=0V，VGS=30V - 1.1 100 nA VDS=0V，VGS=-30V - 0.1 -100 nA VDS=600V VGS=0V - 0.1 20 uA Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=2A - 1.85 2.3 Ω Forward Transconductance gFS VDS =15V, ID= 2A - 3.2 10 S Drain-Source Diode Forward Continuous Current Is VGS=0V - - 4 A Source-drain (diode forward) voltage VSD 0.85 1.4 V - 676 - - 92.1 - - 19.7 - - 21.8 - - 13.2 - - 46.8 - - 12.6 - 15.6 - - 3.16 - - 6.76 - VGS=0V,IS=2A Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz pF Switching Characteristics Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall-Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD = 300 V, RG = 10Ω VGS = 10V, ID = 4A VDS = 300V, VGS = 10V, ID = 4A 1、Repetitive rating, pulse width limited by junction temperature. 2、Pulse width