SL2308

SL2308 60V N-Channel Enhancement Mode MOSFET  DESCRIPTION  FEATURE high cell density advanced trench technology..  60V/1 . 8 A, R DS(ON) =1 35mΩ(typ.)@VGS=1 0V  60V/ 1 ..5 A, R DS(ON)=1 54m Ω (typ.)@VGS=4.5V  Super high design for extremely low RDS(ON) This high density process is especially tailored to  The SL2308 is the N-Channel logic enhancement Exceptional on-resistance and Maximum DC S Un em i ve C on co r C fi nd h de u ip c nt t o ia r l mode power field effect transistor is produced using current capability minimize on-state resistance. These devices are particularly suited for low voltage application, and  This is a Full RoHS compliance low in-line power loss are needed in a very small  SOT23-3 package design outline surface mount package.  APPLICATIONS  PIN CONFIGURATION www.slkormicro.com 1  Power Management in Note Book  Portable Equipment  Battery Powered System SL2308  ABSOLUTE MAXIMUM RATINGS ( TA = 25℃ Symbol Unless otherwise noted ) Parameter Typical Unit VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V 1.8 A Continuous Drain Current (TJ=150℃) VGS-4.5V IDM Pulsed Drain Current 10 A IS Continuous Source Current (Diode Conduction) 1 A PD Power Dissipation TJ Operation Junction Temperature U em ni ve co r C nd h i uc p to r ID TSTG TA=25℃ 1.25 TA=75℃ 0.8 Storage Temperature Range W 150 ℃ -55~+150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress rating only and functional device operation is not implied  THERMAL DATA Symbol Min Thermal Resistance-Junction to Ambient S RθJA Parameter www.slkormicro.com 2 Typ Max Unit 62.5 125 ℃/W SL2308  ELECTRICAL CHARACTERISTICS(VDD=2.75V, TA=25℃ Symbol Parameter Condition Unless otherwise noted) Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.0 IGSS Gate Leakage Current IDSS V 2 V VDS=0V, VGS=±12V ±100 nA VDS=44V, VGS=0 1 VDS=44V, VGS=0 Zero Gate Voltage Drain Current 5 S e C m on c o fi n de d u nt c ia to l r TJ=85℃ uA ID(ON) RDS(ON) Gfs On=State Drain Current VDS≧5V, VGS=4.5V Drain-Source On-Resistance 10 A VGS =10V,I D=1.8A 135 160 VGS=4.5V, ID=1.5A 154 200 mΩ Forward Transconductance VDS=5V, ID=2.1A 10 IS=1.0A, VGS=0V 0.8 1.0 3.9 S Source-Drain Diode VSD Diode Forward Voltage V Dynamic Parameters Qg Total Gate Charge VDS=27V 2.1 Qgs Gate-Source Charge VGS=4.5V 0.6 Qgd Gate-Drain Charge ID=2.1A 0.8 Ciss Input Capacitance VDS=25V 295 Coss Output Capacitance VGS=0V 40 Crss Reverse Transfer Capacitance f=1MHz 15 VDS=27V 3.6 RL=10Ω 3.5 ID=1A 32 Td(on) Tr Turn-On Time Td(off) Tf VGEN=4.5V Turn-Off Time RG=6Ω 3 Note: 1. Pulse test: pulse width