FDMA905P

FDMA905P P-Channel Enhancement Mode Power MOSFET Description D The FDMA905P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S to r General Features Schematic diagram ● VDS = -12V,ID =-16A RDS(ON) < 22mΩ @ VGS=-2.5V uc RDS(ON) < 18mΩ @ VGS=-4.5V ● Advanced trench MOSFET process technology nd ● Ultra low on-resistance with low gate charge Pin assignment co Application ●PWM applications ●Load switch Se mi ●Battery charge in cellular handset DFN2X2-6L bottom view Device Marking Device FDMA905P Device Package Reel Size Tape Width Quantity DFN2X2-6L - - - JS MI 905T CR O Package marking and ordering information Absolute maximum ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current -Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit -12 V ±8 V -16 A -65 A 2.5 W -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 50 ℃/W Thermal Resistance,Junction-to-Case (Note 2) RθJC 6.9 ℃/W www.jsmsemi.com 第１／５页 FDMA905P P-Channel Enhancement Mode Power MOSFET Electrical characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR) DSS VGS=0V ID=-250μA -12 - - V Zero Gate Voltage Drain Current IDSS VDS=-12V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.4 -0.7 -1 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-6.7A - 12 18 mΩ - 14 22 mΩ - 40 - S - 2700 - PF - 680 - PF - 590 - PF - 11 - nS VDD=-10V,ID=-1A - 35 - nS VGS=-4.5V,RGEN=10Ω - 30 - nS - 10 - nS - 35 48 nC - 5 - nC - 10 - nC - - -1.2 V - - -16 A On Characteristics (Note 3) gFS VDS=-10V,ID=-6.7A uc Forward Transconductance VGS=-2.5V, ID=-6.2A Dynamic Characteristics (Note4) Output Capacitance Coss Reverse Transfer Capacitance Crss Switching Characteristics (Note 4) td(on) Turn-on Rise Time tr F=1.0MHz mi Turn-on Delay Time VDS=-10V,VGS=0V, nd Clss co Input Capacitance Turn-Off Delay Time td(off) tf Se Turn-Off Fall Time Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd to r Off Characteristics VDS=-6V,ID=-10A, VGS=-4.5V CR O Drain-Source Diode Characteristics VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-8A JS MI Diode Forward Voltage (Note 3) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.jsmsemi.com 第２／５页 FDMA905P P-Channel Enhancement Mode Power MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% to r 10% 90% VIN 50% 10% 50% uc PULSE WIDTH Figure 2:Switching Waveforms CR O Se mi Threshold Voltage (V) ID- Drain Current (A) co nd Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Drain Current Rdson On-Resistance(Ω) Rdson On-Resistance(Ω) JS MI Figure 3 Output Characteristics ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 5 Rdson vs Vgs Figure 6 Drain-Source On-Resistance www.jsmsemi.com 第３／５页 FDMA905P to r uc C Capacitance (pF) Is- Reverse Drain Current (A) P-Channel Enhancement Mode Power MOSFET Vds Drain-Source Voltage (V) nd Vsd Source-Drain Voltage (V) Figure 7 Capacitance vs Vds JS MI CR O Se mi co Figure 8 Source- Drain Diode Forward www.jsmsemi.com 第４／５页 FDMA905P P-Channel Enhancement Mode Power MOSFET JS MI CR O Se mi co nd uc to r DFN2X2-6L Package Information Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.jsmsemi.com 第５／５页