ESD5681N07-2/TR

ESD5681NXX ESD5681NXX 1-Line, Uni-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD5681NXX is a transient voltage suppressor designed to protect power interfaces. It is suitable to replace multiple discrete components in portable electronics. The ESD5681NXX is specifically designed to protect USB port. TVS diode with higher surge capability is used to protect USB voltage bus pin. DFN1006-2L (Bottom View) The ESD5681NXX is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Pin1 Pin2 Features  Reverse stand-off voltage: 7V ~ 15V  Surge protection according to IEC61000-4-5 Circuit diagram see Table 4  ESD protection according to IEC61000-4-2  Low clamping voltage  Solid-state silicon technology ±30kV (contact and air discharge) Pin1 Applications  Power supply protection  Power management x* Pin2 X = Device code（I,J,W） * = Month code Marking (Top View) Order information Table 1. Device Package Shipping Marking ESD5681N07-2/TR DFN1006-2L 10000/Tape&Reel I* ESD5681N12-2/TR DFN1006-2L 10000/Tape&Reel J* ESD5681N15-2/TR DFN1006-2L 10000/Tape&Reel W* Will Semiconductor Ltd. 1 Revision 1.3, 2017/09/18 ESD5681NXX Absolute maximum ratings Table 2. Parameter Peak pulse power (tp=8/20μs) ESD according to IEC61000-4-2 air discharge Symbol Rating Unit Ppk 450 W ±30 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature ±30 TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG kV 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA = 25oC, unless otherwise noted) I IPP VF Forward voltage VRWM Reverse stand-off voltage IF Forward current IR Reverse leakage current VFC Forward clamping voltage VBR Reverse breakdown voltage IPP Peak pulse current VCL Clamping voltage IPP Peak pulse current VFC VF IBR IR VRWM VBR VCL V IF IPP Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.3, 2017/09/18 ESD5681NXX o Electrical characteristics (TA = 25 C, unless otherwise noted) Table 3. Reverse Stand off Type number Breakdown voltage Voltage VBR(V) IBR = 1mA VRWM (V) Junction Reverse leakage current IRM(nA) at VRWM Forward voltage capacitance VF(V) IF = 20mA F=1MHz, VR=0V (pF) Max. Min. Typ. Max. Typ. Max. Min. Max. Typ. Max. ESD5681N07 7 8.0 9.0 10.0 10 1000 0.45 1.25 140 210 ESD5681N12 12 13.0 15.0 17.0 1 100 0.45 1.25 80 120 ESD5681N15 15 16.0 18.0 20.0 0.5 50 0.45 1.25 65 100 Table 4. Type number Rated peak pulse current IPP （A） 1)3) Clamping voltage VCL(V) at IPP（A） 1)3) Clamping voltage VCL(V) at IPP = 16A, tp = 100ns 2)3) Clamping voltage VCL(V) at VESD = 8kV ESD5681N07 27 16 11 11 ESD5681N12 18 24 19 19 ESD5681N15 15 29 22 24 2)3) Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5.（8/20μs current waveform） 2) Non-repetitive current pulse, according to IEC61000-4-2. 3) Measured from pin 1 to pin 2. Will Semiconductor Ltd. 3 Revision 1.3, 2017/09/18 ESD5681NXX o Time to half-value: T2= 20s 50 T2 10 10 0 0 T5 10 T1 15 Time (s) 20 25 32 CJ - Junction capacitance (pF) 28 26 24 22 20 18 16 14 12 ESD5681N07 ESD5681N12 ESD5681N15 10 8 -3 0 3 6 9 12 15 18 21 24 27 Time (ns) Contact discharge current waveform per IEC61000-4-2 Pulse waveform:tp=8/20μS 30 tr = 0.7~1ns t 60ns 30ns 30 8/20μs waveform per IEC61000-4-5 Vc-Clamping Voltage (V) 100 90 Front time: T1= 1.25 T = 8s 100 90 Current (%) Peak pulse current (%) Typical characteristics (TA = 25 C, unless otherwise noted) 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 30 f = 1MHz VAC = 50mV ESD5681N07 ESD5681N12 ESD5681N15 0 2 4 6 8 10 12 14 16 18 VR - Reverse voltage (V) Ipp-Peak Pulse Current (A) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 1000 % of Rated power Peak pulse power (W) 100 100 1 10 100 Pulse time (s) 60 40 20 0 1000 0 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 80 Power derating vs. Ambient temperature 4 Revision 1.3, 2017/09/18 PACKAGE OUTLINE DIMENSIONS DFN1006-2L b CATHODE MARKING (Ⅰ) L E (Ⅱ) D e Top View Bottom View (Ⅲ) (Ⅰ) A (Ⅱ) A3 A1 Side View Dimensions in Millimeters Symbol Min. Typ. Max. A 0.340 0.450 0.530 A1 0.000 0.020 0.050 A3 0.125 Ref. D 0.950 1.000 1.075 E 0.550 0.600 0.675 b 0.200 0.250 0.300 L 0.450 0.500 0.550 e 0.650 BSC Recommended PCB Layout (Unit: mm) 0.55 0.60 0.30 Notes: This recommended land pattern is for reference 0.85 1.40 Will Semiconductor Ltd. purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. 5 Revision 1.3, 2017/09/18 TAPE AND REEL INFORMATION RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Quadrant Q1 Q2 Q3 Pin1 Will Semiconductor Ltd. 6 Q4 Revision 1.3, 2017/09/18