ESDA6V8AV5-5/TR

ESDA6V8AV5 ESDA6V8AV5 Http//:www.willsemi.com 4-Line, Low-Capacitor, Uni-directional Transient Voltage Suppressors Descriptions The ESDA6V8AV5 is a transient voltage suppressors (TVS) which provide a very high level SOT-553 protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). It is designed to replace multiplayer varistors (MLV) in I/O4 5 consumer equipments applications such as mobile I/O3 4 phone, notebook, PAD, STB, LCD TV etc. The ESDA6V8AV5 was past ESD transient voltage up to ±8KV (contact) according to 1 2 3 I/O1 GND I/O2 IEC61000-4-2 and withstand peak current up to 3A for 8/20us pulse according to IEC61000-4-5. Pin configuration (Top view) The ESDA6V8AV5 is available in SOT-553 package. Standard products are Pb-free and Halogen-free. 5 4 6H Features 1 2 3 z Working voltage : 5V 6H = Device code z Peak power (tp=8/20us) : 36W * z ESD protection Marking IEC61000-4-2 (Contact) : ±8KV IEC61000-4-2 (Air) : ±15KV z Low leakage current z Small package Applications z Mobile phone z PAD z Notebook z STB z LCD TV z Digital camera z Other electronics equipments Will Semiconductor Ltd. = Month code (A~Z) Order information 1 Device Package Shipping ESDA6V8AV5-5/TR SOT-553 3000/Tape&Reel May, 2012 - Rev.2.1 ESDA6V8AV5 Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp=8/20us) Ppk 36 W Peak pulse current (tp=8/20us) Ipp 3 A ±8 KV ±15 KV 150 o ESD voltage IEC61000-4-2 (Contact) VESD ESD voltage IEC61000-4-2 (Air) Operation junction temperature TJ C Lead temperature TL 260 o Storage temperature Tsg -55~150 o C C Electronics characteristics (Ta=25 oC, unless otherwise noted) Parameter Symbol Reveres maximum working voltage VRWM IR Min. Typ. Max. Unit IR=1uA 5 V VRWM=5V 1 uA Reveres breakdown voltage VBR IT=1mA 6.2 6.8 7.5 V Forward voltage VF IF=10mA 0.4 0.8 1.2 V Clamping voltage VC Ipp=1A tp=8/20us 9 V Ipp=3A tp=8/20us 12 V Junction capacitance CJ 16 20 pF Junction capacitance CJ 8 10 pF 110 100 90 80 70 60 50 40 30 20 10 0 I/O to GND, VR=0V, F=1MHz I/O to I/O VR=0V, F=1MHz 100 90 Front times=1.25*( t90-t10) =8us Peak Pulse Current (%) Peak Pulse Current (%) Reveres leakage current Condition Duration=20us 10 0 5 10 15 20 25 30 Peak Pulse time (us) 35 30ns tr=0.7~1ns 40 8/20us waveform Will Semiconductor Ltd. 60ns IEC61000-4-2 waveform 2 May, 2012 - Rev.2.1 t ESDA6V8AV5 o Typical characteristics (Ta=25 C, unless otherwise noted) 20 20 C - Junction capacitance (pF) VC - Clamping voltage (V) Pulse waveform: tp=8/20us 16 12 8 4 0 0 1 2 3 Fsignal =1MHz 18 Vsignal =50mVrms 16 14 12 10 8 6 4 0 Ipp - Peak pulse current (A) Clamping voltage vs. Peak pulse current 1 2 3 4 5 VR - Reverse voltage (V) Capacitance vs. Reveres voltage 1000 100 % of Rated power Peak Pulse Power (W) 100 10 80 60 40 20 1 0 1 10 100 Pulse Duration(us) 1000 0 25 50 75 100 125 Non-Repetitive Peak Pulse Power vs. Pulse time TA - Ambient temperature ( C) Power derating vs. Temperature ESD Clamping ESD Clamping (IEC61000-4-2 +8KV contact) (IEC61000-4-2 -8KV contact) Will Semiconductor Ltd. 150 o 3 May, 2012 - Rev.2.1 ESDA6V8AV5 Package outline dimensions SOT-553 Symbol Dimensions in millimeter Min. Typ. Max. A 0.525 0.563 0.600 A1 0.000 0.025 0.050 e 0.450 0.500 0.550 c 0.090 0.125 0.160 D 1.500 1.600 1.700 b 0.170 0.220 0.270 E1 1.100 1.200 1.300 E 1.500 1.600 1.700 L 0.100 0.200 0.300  Will Semiconductor Ltd. 7eREF 4 May, 2012 - Rev.2.1