ESD9N5BM-2/TR

ESD9N5BM ESD9N5BM 1-Line, Bi-directional, Ultra-low Capacitance, http//:www.sh-willsemi.com Transient Voltage Suppressors Descriptions The ESD9N5BM is a transient voltage suppressors (TVS) which provide a very high level protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). It is designed to replace DFN1006-2L (Bottom View) multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. The ESD9N5BM was past ESD transient voltage up to Pin1 ±8KV (contact) according to IEC61000-4-2 and withstand Pin2 peak current up to 2.5A for 8/20μs pulse according to IEC61000-4-5. Circuit Diagram The ESD9N5BM is available in DFN1006 package. Standard products are Pb-free and Halogen-free. Features  Reverse stand-off voltage: ±5.0V max.  Transient protection for each line according to IEC61000-4-2 (ESD) : ±8kV (contact discharge) : ±15kV (air discharge) IEC61000-4-4 (EFT) * .U Pin1 Pin2 * = Month (A~Z) .U = Device code Marking (Top View) :40A (5/50ns) IEC61000-4-5 (surge) :2.5A (8/20μs)  Ultra-low capacitance  Low clamping voltage  Low leakage current  Small package Order information Device Package Shipping ESD9N5BM-2/TR DFN1006-2L 10000/Tape&Reel Applications  Mobile phone  PAD  Notebook  STB  LCD TV  Digital camera  Other electronic equipment Will Semiconductor Ltd. 1 Revision 1.3, 2016/01/21 ESD9N5BM Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp=8/20μs) Ppk 40 W Peak pulse current (tp=8/20μs) Ipp 2.5 A ESD voltage IEC61000-4-2 air ±15 VESD KV ESD voltage IEC61000-4-2 contact ±8 TJ 125 o Operating temperature TOP -40~85 o Lead temperature TL 260 o TSTG -55~150 o Junction temperature Storage temperature C C C C Electronics characteristics (Ta=25 oC, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reverse leakage current IR Reverse breakdown voltage Condition VBR IT = 1mA VCL VESD = 8kV Clamping voltage 2) VC Junction capacitance CJ Typ. VRWM = 5V 1) Clamping voltage Min. 7.0 8.5 Max. Unit ±5.0 V 1.0 μA 10.0 V 26 V Ipp=1A tp=8/20μs 13 V Ipp=2.5A tp=8/20μs 16 V 1.5 pF F=1MHz, VR=0V 1.0 Notes: 1) Contact discharge mode, according to IEC61000-4-2. 2) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 2 Revision 1.3, 2016/01/21 ESD9N5BM o 100 90 Front time: T1= 1.25 T = 8μs 100 90 Time to half-value: T2= 20μs Current (%) Peak pulse current (%) Typical characteristics (Ta=25 C, unless otherwise noted) 50 T2 10 0 0 10 T5 10 T1 15 Time (μs) 20 25 tr = 0.7~1ns 8/20μs waveform per IEC61000-4-5 16 12 8 1.5 2.0 1.4 C - Junction capacitance (pF) VC - Clamping voltage (V) Pulse waveform: tp=8/20μs 1.0 Time (ns) Contact discharge current waveform per IEC61000-4-2 20 4 0.5 t 60ns 30ns 30 2.5 f = 1MHz VAC = 50mV 1.2 1.0 0.8 0.6 3.0 0 1 Ipp - Peak pulse current (A) 2 3 4 5 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 1000 % of Rated power Peak Pulse Power (W) 100 100 10 80 60 40 20 1 0 1 10 100 Pulse Duration(μs) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 3 Revision 1.3, 2016/01/21 ESD9N5BM o Typical characteristics (Ta=25 C, unless otherwise noted) 10V/div 10V/div 20ns/div 20ns/div ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) Will Semiconductor Ltd. (-8kV contact discharge per IEC61000-4-2) 4 Revision 1.3, 2016/01/21 ESD9N5BM Package outline dimensions DFN1006-2L b CATHODE MARKING (Ⅰ) L E (Ⅱ) D e Top View Bottom View (Ⅲ) (Ⅰ) A (Ⅱ) A3 A1 Side View Symbol Min. Typ. Max. A 0.30 - 0. 50 A1 0.00 - 0.05 A3 Recommend land pattern (Unit: mm) 0.55 0.125 REF. D 0.95 1.00 1.05 E 0.55 0.60 0.65 b 0.20 0.25 0.30 L 0.45 0.50 0.55 e 0.60 0.30 Dimensions In Millimeters 0.65 Typ. Notes: 0.85 This recommended land pattern is for reference purposes only. Please consult your manufacturing 1.40 Will Semiconductor Ltd. group to ensure your PCB design guidelines are met. 5 Revision 1.3, 2016/01/21