ME2159B
0.8A Step-Up Current Mode PWM Converter ME2159B
Description
Features
The ME2159B is a current mode boost DC-DC
Precision Feedback Reference Voltage:
0.6V ● Reference Voltage accuracy: ±2%
converter. Its PWM circuitry with built-in 0.18Ω power
MOSFET make this regulator highly power efficient.
Adjustable Output up to 12V
The internal compensation network also minimizes
Internal Fixed PWM frequency: 650KHz
as much as 6 external component counts. The
Internal 0.18Ω,2A, 16V Power MOSFET
non-inverting input of error amplifier connects to a 0.6V
Shutdown Current: 0.1μA
precision reference voltage and internal soft-start
Over Temperature Protection:165℃
function can reduce the inrush current.
Applications
Chargers
LCD Displays
Digital Cameras
Handheld Devices
Portable Products
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Package
●
6-pin SOT23-6
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ME2159B
Typical Application
Selection Guide
ME 21 59 B M6 G
Environment Mark
Package:
M6-SOT23-6
Version or Function:
B:driving 1.0A load
Product Type
Product Series
Microne
product series
ME2159BM6G
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product function
Driving 1.0A Load
Output voltage
VFB=600mv
Package
SOT23-6
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ME2159B
Pin Configuration
NC
VIN
EN
6
5
4
印字面
1
2
3
LX
GND
FB
Pin information
Pin Number
Name
Function
1
LX
Power Switch Output
2
GND
Ground
3
FB
Feedback
4
EN
Chip Enable(Active High)
5
VIN
Power Supply
6
NC
NC
Block Diagram
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ME2159B
Absolute Maximum Ratings
Parameter
Symbal
Rating
Unit
VIN
-0.3~6.0
V
VEN,VFB
-0.3~VIN
V
voltage at SW Pin
VLX
-0.3~12
V
LX Pin Current
ILX
2200(VIN=3.0V,VOUT=5.0V)
mA
Internal Power Dissipation(SOT23-6)
PD
300
mW
Operating Ambient Temperature
Topr
-40~125
°C
Storage Temperature
Tstg
-40~+150
°C
Tsolder
260°C, 10S
°C
Power supply voltage, VIN
voltage at EN、FB Pin
Soldering temperature and time
Electrical Characteristics
(VIN = VEN=3.3V, VOUT=5V, C1= C2= 22μF, L=4.7μH, TA =25 °C, unless otherwise noted.)
Parameter
Symbol
Test condition
Min
Typ.
Max
Unit
2.5
-
5.5
V
System Supply Input
Input voltage range
Under Voltage Lockout
VIN
VUVLO
UVLO Hysteresis
2.15
V
0.08
V
Average Supply Current
ISS1
VFB=0.55V, Switching
0.8
1.5
mA
Quiescent Current
ISS2
VFB=0.66V, No Switching
280
360
μA
Shutdown Supply Current
ISS3
VEN=GND
0.1
5
μA
Operation Frequency
FOSC
VFB=1.0V
0.65
0.8
MHz
Maximum Duty Cycle
DMAX
90
%
Minimum Duty Cycle
DMIN
22
%
Oscillator
0.5
Reference Voltage
Reference Voltage
Line Regulation
VFB
0.588
VIN=2.6V to 4.3V
0.6
0.612
V
0.03
0.1
%/V
Enable Control
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ME2159B
Enable Voltage
VEN
1.5
Shutdown Voltage
VEN
-
V
0.6
V
MOSFET
On Resistance of Driver
RDS (ON)
ILX=2A
0.18
Ω
2.2
A
Protection
OCP Current
IOCP
Over Temperature Protection
OTP
-
165
-
°C
OTP Hysteresis
OTH
-
25
-
°C
Typical Performance Characteristics(ME2159BM6G)
1、Output Voltage VS. Output Current (Vout =5.0V)
2、Efficiency VS. Output Current(Vout=5.0V)
Efficiency VS.Output Current
Efficiency(%)
100
80
60
VIN=2.5V
VIN=4.2V
VIN=3.0V VIN=3.3V
40
20
0
0
200
400
600
800
1000 1200 1400 1600 1800
Output Current(mA)
3、VOUT VS. Input Voltage (IOUT=10mA)
4、ISS1 VS. Input Voltage
Average Supply Current VS. Input Voltage
5.1
5.05
5
4.95
4.9
4.85
4.8
4.75
4.7
1.2
Average Supply
Current(mA)
Output Voltage (V)
Output Voltage VS.Input Voltage
0.8
0.6
0.4
0.2
0
2.5
3
3.5
4
Input Voltage(V)
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1
4.5
5
2.5
3
3.5
4
4.5
Input Voltage(V)
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5
5.5
ME2159B
5、ISS2 VS. Input Voltage
6、Oscillator Frequency VS. Input Voltage
Quiescent Current VS.Input Voltage
Oscillator Frequency(MHz)
Oscillator Frequency VS.Input Voltage
Quiescent Current(uA)
320
300
280
260
240
220
2.5
3
3.5
4
4.5
Input Voltage(V)
5
5.5
0.9
0.8
0.7
0.6
0.5
0.4
2.5
3
3.5
4
4.2
4.5
Input Voltage(V)
Function Description
Operation
The ME2159B is a current mode boost converter. The constant switching frequency is 1MHz and operates with
pulse width modulation (PWM). Build-in 16V / 2A MOSFET provides a high output voltage. The control loop
architecture
is peak current mode control; therefore slope compensation circuit is added to the current signal to allow stable
operation for duty cycles larger than 50%.
Soft Start Function
Soft start circuitry is integrated into ME2159B to avoid inrush current during power on. After the IC is enabled, the
output of error amplifier is clamped by the internal soft-start function, which causes PWM pulse width increasing
slowly and thus reducing input surge current.
Over Temperature Protection (OTP)
The ME2159B will turn off the power MOSFET automatically when the internal junction temperature is over 150°C.
The power MOSFET wake up when the junction temperature drops 30°C under the OTP threshold temperature.
Output Disconnect
When power on and the EN pin will be pulled high. The ME2159B start up and operates. The external PMOS is
turned on and current through it for output loading. While output loading is increase, output voltage is drop. When the
FB pin voltage is under 0.3V, the EN pin sinks 20μA current, the external PMOS will be turn off. The output short
condition will be disconnected.
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ME2159B
Application Information
Inductor Selection
Inductance value is decided based on different condition. 3.3uH to 4.7μH inductor value is recommended for general
application circuit. There are three important inductor specifications, DC resistance, saturation current and core loss.
Low DC resistance has better power efficiency. Also, it avoids inductor saturation which will cause circuit system
unstable and lower core loss at 1MHz.
Capacitor Selection
The output capacitor is required to maintain the DC voltage. Low ESR capacitors are preferred to reduce the output
voltage ripple. Ceramic capacitor of X5R and X7R are recommended, which have low equivalent series resistance
(ESR) and wider operation temperature range.
Diode Selection
Schottky diodes with fast recovery times and low forward voltages are recommended. Ensure the diode average
and peak current rating exceed the average output current and peak inductor current. In addition, the diode’s
reverse breakdown voltage must exceed the output voltage.
Output Voltage Programming
The output voltage is set by a resistive voltage divider from the output voltage to FB. The output voltage is:
V
OUT
0.6 1
R
R
1
2
PCB Layout Check List
When laying out the printed circuit board, the following checklist should be used to ensure proper operation of
the ME2159B.
1. The power traces, consisting of the GND trace, the SW trace and the VIN trace should be kept short, direct
and wide.
2. LX、L and D switching node, wide and short trace to reduce EMI.
3. Place CIN near VCC pin as closely as possible to maintain input voltage steady and filter out the pulsing input
current.
4. The resistive divider R1and R2 must be connected to FB pin directly as closely as possible. the internal power
MOSFETs.
5. FB is a sensitive node. Please keep it away from switching node, LX.
6. The GND of the IC, CIN and COUT should be connected close together directly to a ground plane.
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ME2159B
Package Information
● Package type:SOT23-6
DIM
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Millimeters
Inches
Min
Max
Min
Max
A
0.9
1.45
0.0354
0.0570
A1
0
0.15
0
0.0059
A2
0.9
1.3
0.0354
0.0511
B
0.2
0.5
0.0078
0.0196
C
0.09
0.26
0.0035
0.0102
D
2.7
3.10
0.1062
0.1220
E
2.2
3.2
0.0866
0.1181
E1
1.30
1.80
0.0511
0.0708
e
0.95REF
0.0374REF
e1
1.90REF
0.0748REF
L
0.10
0.60
0.0039
0.0236
a0
00
300
00
300
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ME2159B
The information described herein is subject to change without notice.
Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or diagrams
described herein whose related industrial properties, patents, or other rights belong to third parties.
The application circuit examples explain typical applications of the products, and do not guarantee
the success of any specific mass-production design.
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Nanjing Micro One Electronics Inc is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting the
human body, such as exercise equipment, medical equipment, security systems, gas equipment, or
any apparatus installed in airplanes and other vehicles, without prior written permission of Nanjing
Micro One Electronics Inc.
Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure high quality
and reliability, the failure or malfunction of semiconductor products may occur.
The user of these
products should therefore give thorough consideration to safety design, including redundancy,
fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community
damage that may ensue.
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