JSM2301SL

JSM2301SL -20V P-Channel Enhancement-Mode MOSFET General Description Drain ● ID=-2.8A@VGS=-4.5V ● RDS(on)=69mΩ(Typ.)@VGS=-4.5V Gate ● RDS(on)=94mΩ(Typ.)@VGS=-2.5V ● RDS(on)=130mΩ(Typ.)@VGS=-1.8V ● Low Gate charge ● Fast switching speed ● Improved dv/dt capability G. Gate S. Source D. Drain ● Suit for -1.8V gate drive applications JS ● Application: Source P-MOS Note Book - Load Switch - Hand Held Instruments - Switching Appliance - Power Management MI - CR ● Lead free and green devices are available O ● Package: SOT23-3L Se Absolute Maximum Ratings (TA=25ºC unless otherwise noted) mi Parameter Drain-Source Voltage Limit Unit VDS -20 V ±10 V co Gate-Source Voltage VGS TC=25ºC TC=25ºC, t ≤ 5s a ID TC=70ºC IDM Power Dissipation (TC=25ºC) Operating Junction Temperature Range Thermal Resistance, Junction-to-Ambient1 -1.56 A 1.56 W 0.012 W/ºC TSTG -55 ~ +150 ºC TJ -55 ~ +150 ºC RθJA 100 ºC/W r to Storage Temperature Range A -10.4 PD Power Dissipation – Derate Above 25ºC -3.3 uc Drain Current –Pulsed a -2.6 nd Drain Current Symbol eElectrical Characteristics (TJ=25ºC unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ=25°C Gate-Body Leakage On Characteristics BVDSS VGS=0V, ID=-250µA -20 --- --- V IDSS VDS=-16V, VGS=0V --- --- -1 μA IGSS VGS=±10V, VDS=0V --- --- ±100 nA VGS(th) VDS=VGS, ID=-250µA -0.3 -0.6 -1.0 V a Gate Threshold Voltage www.jsmsemi.com 第１／４页 JSM2301SL -20V P-Channel Enhancement-Mode MOSFET Drain-Source On-State Resistance VGS=-4.5V, ID=-3.0A --- 69 85 VGS=-2.5V, ID=-2.0A --- 94 120 VGS=-1.8V, ID=-1.0A --- 130 170 gfs VDS=-10V, ID=-1A --- 2.2 --- S IS VG=VD=0V, Force Current --- --- -2.6 A VGS=0V, IS=-1A --- --- -1.3 V --- 350 510 --- 65 95 --- 50 75 --- 4.8 8 --- 0.5 1 RDS(on) Forward Transconductance Drain-Source Diode Characteristics mΩ a Continuous Source Current Diode Forward Voltage VSD Dynamic Characteristics b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance JS Switching Characteristics VDS=-15V, VGS=0V, F=1MHz Crss b Total Gate Charge Qg MI VDS=-10V, VGS=-4.5V, ID=-2.6A Qgs Gate-Drain Charge Qgd --- 1.9 4 Td(on) --- 3.5 7 --- 12.6 24 --- 32.5 62 --- 8.4 16 Rise Time Fall Time Tr VDD=-10V, VGS=-4.5V, RG=25Ω, ID=-1A O Turn-Off Delay Time CR Gate-Source Charge Turn-On Delay Time pF Td(off) Tf nC ns Se Notes: a. Repetitive Rating: Pulsed width limited by maximum junction temperature. b. Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%. c. Guaranteed by design, not subject to production testing. mi Switching Time Test Circuit and Waveforms r to uc nd co www.jsmsemi.com 第２／４页 JSM2301SL -20V P-Channel Enhancement-Mode MOSFET Soldering Methods For Products 1. 2. Storage environment : Temperature=10ºC~35ºC, Humidity=65%±15% Reflow soldering of surface mount devices JS MI CR Figure : Temperature Profile O Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (TSmin) - Temperature Max (TSmax) - Time (Min to Max) (ts) TSmax to TL - Ramp-up rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5ºC of actual Peak Temperature (tP) Ramp-down rate Time 25ºC to Peak Temperature Pb-Free Assembly < 3ºC/sec 100ºC 150ºC 60 ~ 120 sec 100ºC 200ºC 60 ~ 180 sec Se Sn-Pb Eutectic Assembly < 3ºC/sec mi < 3ºC/sec 183ºC 60 ~ 150 sec 240ºC +0/-5ºC 10 ~ 30 sec < 6ºC/sec < 6 minutes 217ºC 60 ~ 150 sec 260ºC +0/-5ºC 20 ~ 40 sec < 6ºC/sec < 8 minutes 3. Flow (wave) soldering (solder dipping) Product Peak Temperature 245ºC ±5ºC 260ºC +0/-5ºC Notices: Dipping Time 5sec ±1sec 5sec ±1sec r to Pb devices Pb-Free devices uc nd co < 3ºC/sec - All companies, brands, logos, pictures, product names and trademarks are the property of owner respective companies. - 规格书内容、版本或參数规格如有更改恕不另行通知，如有特定规格的需求请事先告知，如因此而造成任何的问题，供应商不 承担任何赔偿和法律责任。 - MOS 管电路是静电敏感元器件，且对生产环境要求较严，建议在存放、运输及生产操作时一定要避免静电干扰。 - 经锡炉或回焊炉的温度切勿超过 260 ºC。 www.jsmsemi.com 第３／４页 JSM2301SL -20V P-Channel Enhancement-Mode MOSFET PACKAGE OUTLINE Plastic surface mounted package SOT-23-3L SOT-23-3L O CR MI JS Dim Min Max A 2.80 3.00 B 1.50 1.70 C 1.00 1.20 D 0.35 0.45 E 0.35 0.55 G 1.80 2.00 H 0.02 0.10 J 0.10 0.20 K 2.60 3.00 All Dimensions in mm Unit : mm r to uc nd co mi Se SOLDERING FOOTPRINT PACKAGE INFORMATION Device Package Shipping JSM2301SL SOT-23-3L 3000/Tape&Reel www.jsmsemi.com 第４／４页