JSM2622

JSM2622 N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET D Description The JSM2622 uses advanced trench technology to G provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S General Features Schematic diagram ● VDS = 20V,I D = 50A RDS(ON) Typ =4.5mΩ@ VGS=10V RDS(ON) Typ =5.0mΩ@ VGS=4.5V 1 8 JS 2 7 3 6 4 5 ● High power and current handing capability MI ● Lead free product is acquired ● Surface mount package Pin assignment CR Application O ● Battery Switch ● Load switch Se ● Power management co mi PDFN3333-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) nd Parameter Limit Unit VDS 20 V VGS ±12 V Gate-Source Voltage 50 TA =25℃ ID Continuous Drain Current (TJ =150℃) to uc Drain-Source Voltage Symbol A r 20 TA =70℃ Current-Pulsed (Note 1) IDM 145 A Maximum Power Dissipation PD 21 W TJ,TSTG -55 To 150 ℃ RθJA 2.1 ℃/W Drain Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) www.jsmsemi.com 第１／６页 JSM2622 N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 - - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.5 0.75 1.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V, I D=15 A - 4.5 6.5 mΩ 5.0 8.5 mΩ 10 - - S - 2000 - PF - 500 - PF - 200 - PF - 6.4 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance gFS VDS=10V,ID=15A (Note4) JS Dynamic Characteristics VGS=4.5V, ID=10A Clss Output Capacitance Coss MI Input Capacitance Reverse Transfer Capacitance F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) tr VDD=10V,ID=2A,RL=1Ω - 17.2 - nS td(off) VGS=4.5V,RG=3Ω - 29.6 - nS - 16.8 - nS - 27 nC - 6.5 nC - 6.4 nC O Turn-on Rise Time CR Switching Characteristics VDS=10V,VGS=0V, Turn-Off Delay Time tf Se Turn-Off Fall Time Total Gate Charge Qg Qgs Gate-Drain Charge Qgd mi Gate-Source Charge VGS=10V co Drain-Source Diode Characteristics (Note 3) VSD Diode Forward Current (Note 2) IS Reverse Recovery Time VGS=0V,IS=15A trr Qrr Forward Turn-On Time ton 1.2 V - 50 A TJ = 25°C, IF = 15A - 25 - nS (Note3) - 24 - nC di/dt = 100A/μs uc Reverse Recovery Charge - nd Diode Forward Voltage VDS=10V,ID=15A, Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) r to Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=10V,VG=10V,L=0.5mH,Rg=25Ω， www.jsmsemi.com 第２／６页 JSM2622 N-Channel Enhancement Mode Power MOSFET Test circuit 1) EAS Test Circuit JS O CR MI 2) Gate Charge Test Circuit r to uc nd co mi Se 3) Switch Time Test Circuit www.jsmsemi.com 第３／６页 JSM2622 N-Channel Enhancement Mode Power MOSFET Typical Electrical and Thermal Characteristics (Curves) ID- Drain Current (A) Normalized On-Resistance 15 JS TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) 15 nd co mi Se ID- Drain Current (A) O CR MI Figure 1 Output Characteristics Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) r Is- Reverse Drain Current (A) to Rdson On-Resistance(mΩ) Figure 5 Gate Charge uc Figure 2 Transfer Characteristics ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward www.jsmsemi.com 第４／６页 JSM2622 C Capacitance (pF) Power Dissipation (W) N-Channel Enhancement Mode Power MOSFET TJ-Junction Temperature (℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating O ID- Drain Current (A) CR MI JS Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area TJ-Junction Temperature(℃) nd co mi Se Vds Drain-Source Voltage (V) Figure 10 VGS(th) vs Junction Temperature r to r(t),Normalized Effective Transient Thermal Impedance uc Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.jsmsemi.com 第５／６页 JSM2622 N-Channel Enhancement Mode Power MOSFET PDFN3333 Package Information C D2 D3 L1 H D M JS e E2 CR MI O θ Se Land Pattern ( Only for Reference ) 0.72 1.98 3.55 0.65 0.25 uc nd co mi E1 E 0.4 0.60 A D1 L b MIN 0.70 0.25 0.10 3.25 3.00 1.78 * 3.20 NOM 0.75 0.30 0.15 3.35 3.10 1.88 0.13 3.30 INCH MAX 0.80 0.35 0.25 3.45 3.20 1.98 * 3.40 MIN 0.028 0.010 0.004 0.128 0.118 0.070 * 0.126 NOM 0.030 0.012 0.007 0.132 0.122 0.074 0.005 0.130 MAX 0.031 0.014 0.010 0.136 0.126 0.078 * 0.134 SYMBOL E1 E2 e H L L1 θ M MM MIN 3.00 2.39 0.30 0.30 * * * www.jsmsemi.com NOM 3.15 2.49 0.65BSC 0.40 0.40 0.13 10° * r A b c D D1 D2 D3 E MM to SYMBOL 2.80 MAX 3.20 2.59 0.50 0.50 * 12° 0.15 MIN 0.118 0.094 INCH NOM 0.122 0.098 0.026BSC 0.012 0.016 0.012 0.016 * 0.005 * 10° * * MAX 0.126 0.102 0.020 0.020 * 12° 0.006 第６／６页