JSM3401L

JSM3401L P-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23-3L 0.053Ω@-10V -30V 0.065Ω@-4.5V 3 -4.2A 1.GATE 2.SOURCE 0.085Ω@-2.5V 1 3.DRAIN 2 JS Equivalent Circuit MI General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package CR O APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter mi Se Maximum ratings (Ta=25℃ unless otherwise noted) co Parameter Value Symbol Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current IDM Maximum Power Dissipation PD Thermal Resistance from Junction to Ambient(t ≤5s) R θJA -30 -4.2 -30 A 1.25 W 95 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 www.jsmsemi.com V ±12 r to uc VDS nd Drain-Source Voltage Unit ℃ 第１／６页 JSM3401L P-Channel 30-V(D-S) MOSFET MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static characteristics BVDSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA Drain-source breakdown voltage RDS(on) JS Drain-source on-resistance (note a) MI Forward tranconductance (note a) gFS VGS(th) Gate threshold voltage CR Diode forward voltage (note a) VSD V -30 VGS =-10V, ID =-4.0A 50 53 mΩ VGS =-4.5V, ID =-3.5A 60 65 mΩ VGS =-2.5V, ID =-2.5A 80 85 mΩ VDS =-5V, ID =-4.2A 7 10 VDS =VGS, ID =-250µA -0.6 -1 IS=-1A,VGS=0V S -1.2 V -1.2 V Dynamic characteristics (note b) O Input capacitance Ciss Coss Reverse transfer capacitance Crss Switching Characteristics (note b) Turn-on rise time Turn-off fall time pF 115 pF 75 pF 7.0 ns tr VGS=-10V,VDS=-15V, 3.0 ns td(off) ID =-4.2A ,RGEN=6Ω 30 ns 12 ns tf b.These parameters have no way to verify. www.jsmsemi.com r to uc a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. nd Notes: co Turn-off delay time td(on) mi Turn-on delay time VDS =-15V, VGS = 0 V, f =1MHz Se Output capacitance 950 第２／６页 JSM3401L P-Channel 30-V(D-S) MOSFET Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% JS 10% PULSE WIDTH MI Figure 1:Switching Test Circuit O co mi Se ID- Drain Current (A） Figure 2:Switching Waveforms CR PD Power(W) 50% TJ-Junction Temperature(℃) nd TJ-Junction Temperature(℃) Figure 3 Power Dissipation Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) r to uc Vds Drain-Source Voltage (V) Figure 5 Output Characteristics ID- Drain Current (A) Figure 6 Drain-Source On-Resistance www.jsmsemi.com 第３／６页 JSM3401L Normalized On-Resistance JS ID- Drain Current (A) P-Channel 30-V(D-S) MOSFET TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance co mi Se C Capacitance (pF) O CR Rdson On-Resistance(mΩ) MI Vgs Gate-Source Voltage (V) nd Vds Drain-Source Voltage (V) r to uc Vgs Gate-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward www.jsmsemi.com 第４／６页 JSM3401L JS ID- Drain Current (A) P-Channel 30-V(D-S) MOSFET MI CR Vds Drain-Source Voltage (V) O co mi Se r to uc nd r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.jsmsemi.com 第５／６页 JSM3401L P-Channel 30-V(D-S) MOSFET SOT-23 -3L Package Outline Dimensions JS MI Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° O r to uc nd SOT-23-3L Suggested Pad Layout co mi Se A A1 A2 b c D E1 E e e1 L  CR Symbol www.jsmsemi.com 第６／６页