JSM4407

JSM4407 P-Channel Enhancement Mode Power MOSFET SOP-8 Description S 1 8 D S 7 D excellent RDS(ON), low gate charge and operation with gate 2 S 3 6 D voltages as low as 4.5V. G 4 5 D The JSM4407 uses advanced trench technology to provide Top View General Features ｏｒ Equiva len t Cir cu it ● VDS = -30V RDS(ON) < 20mΩ @ VGS=-4.5V I D = -6.0A G ｃｔ RDS(ON) < 14mΩ @ VGS=-10V S I D = -10.0A ｄｕ ● High power and current handing capability ● Lead free product is acquired D MARKING ｏｎ ● Surface mount package Application ｉｃ ● Battery Switch ● Load switch YW o ｅｍ ● Power management 4407 　Ｓ Y :year code W :week code Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Unit -30 V ±20 V ID -10 A (Note 1) IDM -60 A Maximum Power Dissipation PD 2.1 W TJ,TSTG -55 To 150 ℃ RθJA 50 ℃/W ＭＩ ＣＲ Ｏ Limit ＪＳ Continuous Drain Current (TJ =150℃) Drain Current-Pulsed TA =25℃ Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第１／６页 JSM4407 P-Channel Enhancement Mode Power MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 - - V Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 - -3.0 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-10.0A - 9 14 mΩ Off Characteristics 14 20 mΩ 20 - - S - 1750 - PF - 215 - PF - 180 - PF - 9 - nS VDD=-15V, ID=-10A, - 8 - nS VGS=-10V,RGEN=1Ω - 28 - nS 10 - nS - 24 - nC - 3.5 - nC - 6 - nC - - -1.2 V VDS=-15V,ID=-5.0A Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics ｕｃ (Note4) Input Capacitance VDS=-15V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr td(off) ｍｉ Turn-Off Delay Time Turn-Off Fall Time tf Qg Ｓｅ Total Gate Charge Gate-Source Charge Qgs Qgd ＲＯ 　 Gate-Drain Charge ｒ - ｎｄ Dynamic Characteristics gFS ｔｏ Forward Transconductance VGS=-4.5V, ID=-6.0A ｃｏ On Characteristics (Note 3) VDS=-15V,ID=-10.0A VGS=-10V Drain-Source Diode Characteristics Notes: (Note 3) VSD VGS=0V,IS=-10A ＭＩ Ｃ Diode Forward Voltage ＪＳ 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第２／６页 JSM4407 P-Channel Enhancement Mode Power MOSFET Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 50% ｏｒ 90% VIN 50% 10% ｃｔ PULSE WIDTH Figure 2:Switching Waveforms ＭＩ ＣＲ Ｏ 　Ｓ ｅｍ ｉｃ PD Power(W) ID- Drain Current (A） ｏｎ ｄｕ Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current Rdson On-Resistance(Ω) ＪＳ ID- Drain Current (A) Figure 3 Power Dissipation ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output Characteristics Figure 6 Drain-Source On-Resistance ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第３／６页 ｏｒ ｃｔ ID- Drain Current (A) Normalized On-Resistance JSM4407 P-Channel Enhancement Mode Power MOSFET TJ-Junction Temperature(℃) ｄｕ Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance ＭＩ ＣＲ Ｏ 　Ｓ ｅｍ ｉｃ C Capacitance (pF) ｏｎ Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) ＪＳ Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第４／６页 ｄｕ Vds Drain-Source Voltage (V) ｃｔ ｏｒ ID- Drain Current (A) JSM4407 P-Channel Enhancement Mode Power MOSFET ｉｃ ｅｍ 　Ｓ ＭＩ ＣＲ Ｏ r(t),Normalized Effective Transient Thermal Impedance ｏｎ Figure 13 Safe Operation Area ＪＳ Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第５／６页 JSM4407 P-Channel Enhancement Mode Power MOSFET ＭＩ ＣＲ Ｏ 　Ｓ ｅｍ ｉｃ ｏｎ ｄｕ ｃｔ ｏｒ SOP-8 Package Information Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 ＪＳ Symbol 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 A c e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第６／６页