JSM4606

JSM4606 N and P-Channel Enhancement Mode Power MOSFET Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel General Features JS ● N-Channel P-channel Schematic diagram VDS = 30V,ID =6.9A MI RDS(ON) < 21mΩ @ VGS=10V RDS(ON) < 32mΩ @ VGS=4.5V CR ● P-Channel VDS = -30V,ID = -6.0A RDS(ON) < 60mΩ @ VGS=-4.5V Marking and pin assignment O RDS(ON) < 45mΩ @ VGS=-10V ● Lead free product is acquired mi Se ● High power and current handing capability ● Surface mount package co SOP-8 top view nd Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol N-Channel P-Channel Unit 30 -30 V ±20 ±20 V 6.9 -6.0 A 28 -26 A PD 2.0 2.0 W TJ,TSTG -55 To 150 -55 To 150 ℃ Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current TA=25℃ (Note 1) Maximum Power Dissipation ID IDM TA=25℃ Operating Junction and Storage Temperature Range r to uc Parameter Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) RθJA N-Ch 63.5 ℃/W Thermal Resistance,Junction-to-Ambient (Note2) RθJA P-Ch 63.5 ℃/W www.jsmsemi.com 第１／８页 JSM4606 N and P-Channel Enhancement Mode Power MOSFET N-CH Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V - - 50 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.6 2.4 V Drain-Source On-State Resistance RDS(ON) Off Characteristics JS On Characteristics (Note 3) MI Forward Transconductance gFS - 19 21 mΩ VGS=4.5V, I D=5A - 29 32 mΩ VDS=5V,ID=5.0A 5 - - S - 398 - PF - 67 - PF - 61 - PF Dynamic Characteristics (Note4) Input Capacitance O CR VGS=10V, ID=6.9A Reverse Transfer Capacitance Turn-on Rise Time td(on) tr td(off) tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 8.0 - nS - 11.5 - nS VGS=10V,RGEN=6Ω - 17 - nS I D=1.0A - 7.5 - nS - 7.5 - nC - 1.7 - nC - 1.3 - nC - 0.75 1.0 V VDS=10V,ID=1.0A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD r to uc Turn-Off Fall Time - VDD=15V, RL=15 Ω nd Turn-Off Delay Time F=1.0MHz co Turn-on Delay Time Crss VDS=15V,VGS=0V, mi Switching Characteristics (Note 4) Coss Se Output Capacitance Clss VGS=0V,IS=2A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.jsmsemi.com 第２／８页 JSM4606 N and P-Channel Enhancement Mode Power MOSFET Characteristics Curve(N-Channel) JS MI O CR co mi Se r to uc nd 5.0A www.jsmsemi.com 第３／８页 JSM4606 N and P-Channel Enhancement Mode Power MOSFET Characteristics Curve(N-Channel) JS MI O CR co mi Se r to uc nd www.jsmsemi.com 第４／８页 JSM4606 N and P-Channel Enhancement Mode Power MOSFET P-CH Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 - - V Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -50 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.0 -1.3 -2.0 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-6.0A VGS=-4.5V, ID=-5.0A - 42 55 45 60 mΩ mΩ gFS VDS=-5V,ID=-5.0A 10 - - S - 930 - PF - 121 - PF - 102 - PF - 9.5 - nS VDD=-15V, RL=5.0Ω - 5.4 - nS VGS=-10V,RGEN=6Ω - 42.5 - nS - 13.6 - nS - 20 - nC - 4.1 - nC Off Characteristics On Characteristics (Note 3) JS MI Forward Transconductance Input Capacitance CR Dynamic Characteristics (Note4) Clss O Output Capacitance Reverse Transfer Capacitance Crss td(on) Turn-on Rise Time tr td(off) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd I D=-3.0A VDS=-15V,ID=-3.0A VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD r to uc tf nd Turn-Off Fall Time co mi Turn-on Delay Time Turn-Off Delay Time F=1.0MHz Se Switching Characteristics (Note 4) Coss VDS=-15V,VGS=0V, VGS=0V,IS=-2.0A - 2.6 - nC - 0.75 -1.0 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.jsmsemi.com 第５／８页 JSM4606 N and P-Channel Enhancement Mode Power MOSFET Characteristics Curve(P-Channel) JS MI O CR co mi Se r to uc nd -4.0A www.jsmsemi.com 第６／８页 JSM4606 N and P-Channel Enhancement Mode Power MOSFET Characteristics Curve(P-Channel) JS MI O CR 16 co mi Se www.jsmsemi.com r to uc nd 18 第７／８页 JSM4606 N and P-Channel Enhancement Mode Power MOSFET SOP-8 Package Information JS MI O CR co mi Se Dimensions In Millimeters Min. Max. A 1.350 1.750 A1 0.100 0.250 A2 1.350 1.550 b 0.330 c r to uc nd Symbol Dimensions In Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.510 0.013 0.020 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° www.jsmsemi.com 第８／８页