ESD3Z3V3BU

ESD3Z3V3BU

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SOD-323

  • 描述:

    Bi PD=84W VRWM=3.3V VBR=4.2V VC=21V IPP=4A IR=0.1uA CJ=0.5PF 个人消费电子、智能家居、监控门禁、车载电子

  • 数据手册
  • 价格&库存
ESD3Z3V3BU 数据手册
ESD3Z3V3BU Ultra Low Capacitance ESD Protection Diode DESCRIPTION SOD-323 Plastic-Encapsulate ESD Protection Diodes ESD3Z3V3BU is an ultra low-capacitance Transient Voltage Suppressor (TVS) designed to provide electrostatic discharge (ESD) protection for high-speed data interfaces. With typical capacitance of 0.25pF, ESD3Z3V3BU is designed to protect parasitic-sensitive systems against over-voltage and overcurrent transient events. It complies with IEC 61000-4-2 (ESD), Level 4 (±15kV air, ±8kV contact discharge), IEC 61000-4-4 (electrical fast transient - EFT) (40A, 5/50 ns), very fast charged device model (CDM) ESD and cable discharge event (CDE), etc. ESD3Z3V3BU uses ultra-small SOD-323 package. Each ESD3Z3V3BU device can protect one highspeed data line. It offers system designers flexibility to protect single data line where space is a premium concern. The combined features of low capacitance, ultra-small size and high ESD robustness make ESD3Z3V3BU ideal for high-speed data port and high-frequency line applications, such as cellular phones and HD visual devices. Features          Peak power dissipation: 100W (8/20μs) Transient protection for high-speed data lines IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61000-4-4 (EFT) 40A (5/50ns) Cable Discharge Event (CDE) Protects one data, control line Low capacitance: 0.25pF (Typical) Low clamping voltage Low leakage current Meets MSL 1 Requirements Applications       Pin Configuration 10/100M Ethernet Ports WAN/LAN Equipment Desktops, Servers and Notebooks Cellular Phones Switching Systems Audio/Video Inputs Circuit Diagram 1 2 Mechanical Characteristics  Package: SOD-323  Flammability Rating: UL 94V-0  High temperature soldering guaranteed: 260℃/ 10s  Packaging: Tape and Reel  Marking: 3BU Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter ESD per IEC 61000−4−2 (Air) ESD per IEC 61000−4−2 (Contact) Symbol VESD Value ± 20 ± 20 Unit KV Peak Pulse Power(8/20us ) PPP 100 W Operating Temperature TOPT −55 to +125 °C Storage Temperature TSTG −55 to +150 °C Lead Solder Temperature – Maximum (10 Second Duration) TL 260(10 sec.) °C The above data are for reference only. http://www.microdiode.com Rev:2024A1 Page :1 ESD3Z3V3BU Ultra Low Capacitance ESD Protection Diode Electrical Characteristics (TA=25°C unless otherwise specified) Symbol Parameter VRWM Reverse Working Voltage VBR Reverse Breakdown Voltage IR Reverse Leakage Current VC Clamping Voltage VC CJ Test Condition IT = 1mA Min Typ Max Units 3.3 V 4.2 V 100 nA IPP = 1A, tp = 8/20μs 12 V Clamping Voltage IPP = 4A, tp = 8/20μs 25 V Junction Capacitance VR = 0V, f = 1MHz 0.40 pF VRWM = 3.3V 0.25 The above data are for reference only. http://www.microdiode.com Rev:2024A1 Page :2 ESD3Z3V3BU Ultra Low Capacitance ESD Protection Diode ELECTRICAL CHARACTERISTICS CURVE The curve above is for reference only. http://www.microdiode.com Rev:2024A1 Page :3 ESD3Z3V3BU Ultra Low Capacitance ESD Protection Diode Outlitne Drawing SOD-323 Package Outline Dimensions Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. PACKAGE SPECIFICATIONS Package Reel Size SOD-323 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 178 3000 183×188×80 45,000 386×265×215 180,000 7' http://www.microdiode.com Rev:2024A1 Page :4
ESD3Z3V3BU 价格&库存

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ESD3Z3V3BU
  •  国内价格
  • 20+0.21162
  • 200+0.16454
  • 600+0.13842
  • 3000+0.11861
  • 9000+0.10503
  • 21000+0.09778

库存:129

ESD3Z3V3BU
  •  国内价格
  • 20+0.40480
  • 100+0.24150
  • 800+0.16900
  • 3000+0.12070
  • 6000+0.11480
  • 30000+0.10630

库存:0

ESD3Z3V3BU

库存:1762