ESD3Z3V3BU
Ultra Low Capacitance ESD Protection Diode
DESCRIPTION
SOD-323 Plastic-Encapsulate ESD Protection Diodes
ESD3Z3V3BU is an ultra low-capacitance Transient Voltage Suppressor (TVS) designed to provide
electrostatic discharge (ESD) protection for high-speed data interfaces. With typical capacitance of
0.25pF, ESD3Z3V3BU is designed to protect parasitic-sensitive systems against over-voltage and overcurrent transient events. It complies with IEC 61000-4-2 (ESD), Level 4 (±15kV air, ±8kV contact
discharge), IEC 61000-4-4 (electrical fast transient - EFT) (40A, 5/50 ns), very fast charged device
model (CDM) ESD and cable discharge event (CDE), etc.
ESD3Z3V3BU uses ultra-small SOD-323 package. Each ESD3Z3V3BU device can protect one highspeed data line. It offers system designers flexibility to protect single data line where space is a
premium concern. The combined features of low capacitance, ultra-small size and high ESD robustness
make ESD3Z3V3BU ideal for high-speed data port and high-frequency line applications, such as cellular
phones and HD visual devices.
Features
Peak power dissipation: 100W (8/20μs)
Transient protection for high-speed data lines
IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC61000-4-4 (EFT) 40A (5/50ns)
Cable Discharge Event (CDE)
Protects one data, control line
Low capacitance: 0.25pF (Typical)
Low clamping voltage
Low leakage current
Meets MSL 1 Requirements
Applications
Pin Configuration
10/100M Ethernet Ports
WAN/LAN Equipment
Desktops, Servers and Notebooks
Cellular Phones
Switching Systems
Audio/Video Inputs
Circuit Diagram
1
2
Mechanical Characteristics
Package: SOD-323
Flammability Rating: UL 94V-0
High temperature soldering guaranteed:
260℃/ 10s
Packaging: Tape and Reel
Marking: 3BU
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
Symbol
VESD
Value
± 20
± 20
Unit
KV
Peak Pulse Power(8/20us )
PPP
100
W
Operating Temperature
TOPT
−55 to +125
°C
Storage Temperature
TSTG
−55 to +150
°C
Lead Solder Temperature – Maximum (10 Second
Duration)
TL
260(10 sec.)
°C
The above data are for reference only.
DN:T20403A0
http://www.microdiode.com
Rev:2020A0
Page :1
ESD3Z3V3BU
Ultra Low Capacitance ESD Protection Diode
Electrical Characteristics (TA=25°C unless otherwise specified)
Symbol
Parameter
VRWM
Reverse Working Voltage
VBR
Reverse Breakdown
Voltage
IR
Reverse Leakage Current
VC
Clamping Voltage
VC
CJ
Test Condition
IT = 1mA
Min
Typ
Max
Units
3.3
V
4.2
V
100
nA
IPP = 1A, tp = 8/20μs
12
V
Clamping Voltage
IPP = 4A, tp = 8/20μs
25
V
Junction Capacitance
VR = 0V, f = 1MHz
0.40
pF
VRWM = 3.3V
0.25
The above data are for reference only.
http://www.microdiode.com
Rev:2020A0
Page :2
ESD3Z3V3BU
Ultra Low Capacitance ESD Protection Diode
ELECTRICAL CHARACTERISTICS CURVE
The curve above is for reference only.
http://www.microdiode.com
Rev:2020A0
Page :3
ESD3Z3V3BU
Ultra Low Capacitance ESD Protection Diode
Outlitne Drawing
SOD-323 Package Outline Dimensions
Suggested Pad Layout
Note:
1.Controlling dimension:in/millimeters.
2.General tolerance: ±0.05mm.
3.The pad layout is for reference purposes only.
PACKAGE SPECIFICATIONS
Package Reel Size
SOD-323
Reel DIA.
(mm)
Q'TY/Reel
(pcs)
Box Size
(mm)
QTY/Box
(pcs)
Carton Size
(mm)
Q'TY/Carton
(pcs)
178
3000
183×188×80
45,000
386×265×215
180,000
7'
Important Notice and Disclaimer
Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its
products and specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design,purchase or use.
Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, not does Microdiode Electronics
(Jiangsu) assume any liability for application assistance or customer product design. Microdiode
Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased
or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
Microdiode Electronics (Jiangsu).
Microdiode Electronics (Jiangsu) products are not authorized for use as critical components
in life support devices or systems without express written approval of Microdiode Electronics
(Jiangsu).
http://www.microdiode.com
Rev:2020A0
Page :4
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