WNM2046C-3/TR

WNM2046C WNM2046C Single N-Channel, 20V, 0.6A, Power MOSFET VDS (V) https://www.omnivision-group.com G Typical RDS(on) (Ω) S D 0.42 @ VGS =4.5V 20 0.58 @ VGS=2.5V 0.84 @ VGS=1.8V DFN1006-3L Descriptions D The WPM2046C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046C is Pb-free. G Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package DFN1006-3L S 6 = Device Code * = Month(A~Z) Applications Marking  DC/DC converters  Power supply converters circuit  Load/Power Switching for portable device Will Semiconductor Ltd. Order information Device Package Shipping WNM2046C-3/TR DFN1006-3L 10K/Tape&Reel 1 2022/4/21 - Rev.1.1 WNM2046C Absolute Maximum ratings Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current a d Maximum Power Dissipation a d Continuous Drain Current b d Maximum Power Dissipation b d TA=25°C ID TA=70°C TA=25°C PD TA=70°C TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V 0.6 0.55 0.48 0.44 0.32 0.27 0.21 0.18 0.57 0.52 0.45 0.42 0.29 0.25 0.18 0.16 A W A W Pulsed Drain Current c IDM 1.4 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC Typical Maximum 350 390 395 455 397 435 445 505 240 280 a. Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu. b. Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu. c. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%. d. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Will Semiconductor Ltd. 2 Unit °C/W 2022/4/21 - Rev.1.1 WNM2046C Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA 20 V Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V 1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±10V ±5 uA VGS(TH) VGS = VDS, ID = 250uA 0.70 1.0 V VGS = 4.5V, ID = 0.35A 420 600 VGS = 3.1V, ID = 0.20A 500 700 VGS = 2.5V, ID = 0.20A 580 800 VGS = 1.8V, ID = 0.20A 840 1300 VGS = 1.5V, ID = 0.04A 1100 1600 VDS = 10 V, ID = 0.35A 0.85 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS 0.45 mΩ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V, 0.12 Gate-to-Source Charge QGS ID = 0.54 A 0.32 Gate-to-Drain Charge QGD 0.14 Turn-On Delay Time td(ON) 7.2 Rise Time tr VGS = 4.5 V, VDS = 10 V, 9.5 Turn-Off Delay Time td(OFF) ID = 0.54A, RG = 6Ω 19.6 Fall Time tf VGS = 0 V, f = 1.0MHz, VDS = 10 V 30 7 pF 5 1.07 nC SWITCHING CHARACTERISTICS ns 4.6 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = 0.3A 3 0.85 1.5 V 2022/4/21 - Rev.1.1 WNM2046C 20 Typical Characteristics (Ta=25oC, unless otherwise noted) 1.0 2.0 IDS-Drain-to-Source Current (A) 15 VGS=3.0V~4.5V 1.5 VGS=2.5V 1.0 VGS=2.0V 0.5 VGS=1.5V 0.0 0.0 0.5 1.0 1.5 2.0 VDS=1.0V 0.8 0.6 o T= -50 C o T= 25 C o T= 150 C 0.4 0.2 0.0 0.0 0.5 VDS-Drain-to-Source Voltage (V) 1.5 1.0 2.0 2.5 3.0 VGS-Gate-to-Source Voltage (V) Output characteristics Transfer characteristics 1.0 2.0 RDS(ON)-On-Resistance () VGS=5.5V VGS=1.8V 0.8 VGS=2.5V 0.6 VGS=3.1V 0.4 VGS=4.5V 0.2 0.0 0.2 0.4 0.6 1.5 1.0 0.5 0.0 1.5 0.8 2.0 On-Resistance vs. Drain current VGS=4.5V,ID=0.54A 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 o Temperature ( C) 4.0 3.5 4.5 5.0 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Temperature (oC) On-Resistance vs. Junction temperature Will Semiconductor Ltd. 3.0 On-Resistance vs. Gate-to-source voltage 1.6 1.5 2.5 VGS-Gate-to-Source Voltage (V) IDS-Drain-to-Source Current (A) Gate Threshold Voltage Normalize VGS=6V 10 IDS-Drain-to Source Current (A) =8V GS 5 VDS-Drain-to-Source Voltage(V) RDS(ON)-On-Resistance () VGS=10VV 0 RDS(ON)-On-Resistance Normalize IDS-Drain-to-Source Current (A) 6 4 2 0 Threshold voltage vs. Temperature 4 2022/4/21 - Rev.1.1 WNM2046C 0.8 IS-Source-to-Drain Current (A) 60 VGS=0V C -Capacitance (pF) 50 F=1MHz 40 30 Ciss 20 Coss Crss 10 0 2 4 6 8 0.6 o o T=25 C 0.2 0.0 0.0 10 T=150 C 0.4 0.1 0.2 VDS-Drain Voltage (V) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 V -Source-to-Drain Voltage (V) SD Capacitance Body diode forward voltage 80 10 o TJ(MAX)=150 C 70 o ID-Drain Current (A) TA=25 C Power (W) 60 50 40 30 20 Limit by Rdson 1 100us 1ms 0.1 10s 0 1E-6 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 TA=25 C 1 10 100 VDS-Drain to Source Voltage(V) *VGS>minimum VGS at which RDS(ON) is specified Safe operating Area Single pulse power Gate Voltage (V) 1s Single Pulse 0.1 Pulse width (S) 4 100ms DC o 10 10ms VGS=4.5V, VDS=10V, ID=0.54A 3 2 1 0 0.0 0.4 0.8 1.2 Qg (nc) Gate Charge Characteristics Will Semiconductor Ltd. 5 2022/4/21 - Rev.1.1 WNM2046C Transient thermal response (Junction-to-Ambient) Normalized Effective Transient Thermal Impedance 1 0.1 Duty cycle=0.5 0.2 0.1 0.05 0.01 0.02 PDM single pulse t1 t2 1E-3 1E-4 1E-6 1. Duty Cycle, D=t1/t2 2. Per Unit Base =RθJA= 455°C/W 3. TJM-TA = PDM RθJA 4. Surface Mounted 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Will Semiconductor Ltd. 6 2022/4/21 - Rev.1.1 WNM2046C PACKAGE OUTLINE DIMENSIONS DFN1006-3L L L1 L b1 E b2 e1 D e2 (Ⅰ) Top View Bottom View (Ⅱ) (Ⅱ) 0.2 0.25 0.45 0.7 A1 0.45 A (Ⅰ) 0.25 Side View Symbol RECOMMENDED LAND PATTERN(Unit:mm) Dimensions in Millimeters Min. Typ. Max. A 0.31 - 0.40 A1 0.00 - 0.05 D 0.95 1.00 1.05 E 0.55 0.60 0.65 b1 0.10 0.15 0.20 b2 0.45 0.50 0.60 L 0.20 0.25 0.30 L1 0.20 0.30 0.40 e1 0.35Ref e2 0.65 Ref Will Semiconductor Ltd. 7 2022/4/21 - Rev.1.1 WNM2046C TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pin1 User Direction of Feed 7inch 13inch 8mm 12mm 16mm Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Quadrant Q1 Q2 Q3 Will Semiconductor Ltd. 1 8 Q4 2022/4/21 - Rev.1.1