2SB624

2SB624 2SB624 TRANSI STOR (PNP) Equivalent Circuit: SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES: ※ Complimentary to 2SD596 ※ High DC Current gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA Collector Power Dissipation PC 200 mW RΘJA 325 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55～+150 ℃ Thermal Resistance From Junction To Ambient www.yongyutai.com PAGE 1 2SB624 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min V(BR)CBO IC= -100μA, IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-30 V , IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 μA hFE VCE=-1V, IC= -100mA 100 hFE VCE=-1V, IC=- 700mA 50 Collector-base breakdown voltage Typ Max Unit 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=-700 mA, IB= -70mA -0.6 V Base-emitter saturation voltage VBE(sat) VCE=-6V, IC=- 10mA -0.7 V fT VCE=-6V, IC= -10mA f=100MHz Cob VCE=-6V, IE= 0 f=1MHz Transition frequency Collector Output Capacitance 160 MHz 17 pf ※ Pulse test: Pulse width≤350μs,Duty Cycle≤2％ CLASSIFICATION OF hFE MARKING BV1 BV2 BV3 BV4 BV5 Range 110-180 135-220 170-270 200-320 250-400 www.yongyutai.com PAGE 2 2SB624 TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS www.yongyutai.com PAGE 3 2SB624 www.yongyutai.com PAGE 4