WD1035DH-8/TR

WD1035DH Http//:www.sh-willsemi.com WD1035DH High Efficiency 5V, 3A continuous, 1.5MHz Synchronous Step-Down Regulator Descriptions WD1035DH is a high efficiency 1.5MHz synchronous step-Down DC/DC regulator capable of delivering up to 3A output current. It can operate over a wide input voltage range from 2.7V to 5.5V and integrate main switch and synchronous switch with very low RDSON to DFN2x2-8L Package minimize the conduction loss. WD1035DH also provides over temperature protection (OTP), under-voltage lockout (UVLO), VOUT short protection. The WD1035DH is available in the DFN2x2-8L package. Standard product is Pb-Free and FB 1 PG 2 IN 3 Exposed Pad PGND 4 Halogen-Free. 8 SGND 7 EN 6 LX 5 NC Pin configuration (Top view) Features ⚫ Low Rdson internal Switches (top/bottom): 100/60mΩ ⚫ 2.7-5.5V input voltage range ⚫ 3A continuous load current capability ⚫ 1.5MHz switching frequency minimizes 1035 DHYW the external components ⚫ 45uA low quiescent current ⚫ Internal soft-start limits the inrush current ⚫ Constant On Time (COT) Control for fast transient response ⚫ 100% Duty-Cycle Mode ⚫ Power-Good Output Smart Phones ⚫ TV ⚫ Set Top Box and OTT box ⚫ Access Point Router Will Semiconductor Ltd. = Device Code DH = Special code Y = Year Code W = Week Code Marking Applications ⚫ 1035 Order information 1 Device Package Shipping WD1035DH-8/TR DFN2x2-8L 3000/Reel&Tape 2018.03 - Rev. 1.0.2 WD1035DH Typical Applications L1:1uH Vin:2.7-5.5V Cin 10uF IN LX R1 C1 120K 22pF WD1035DH EN ON/OFF 100K FB Cout 22uF R2 60K PG PGND SGND Fig1 Schematic Diagram Pin Descriptions Pin Name Pin Number FB 1 Pin Description Feedback pin. Connected to the feedback resistor for adjustable version or VOUT for fix output version. Power good indicator. The output of this pin is an open-drain with PG 2 external pull-up resistor. PG is pulled up when the FB voltage is within 90%, otherwise it is LOW. IN 3 Input pin. Decouple this pin to GND with at least 10uF ceramic Cap. PGND 4 Power Ground. NC 5 No Internal Connection. LX 6 Inductor pin. EN 7 Enable Control. Pull high to turn on. Do not leave it floating . SGND 8 Signal Ground. Exposed Pad Will Semiconductor Ltd. The exposed pad must be soldered to a large PCB and connected to PGND for maximum power dissipation. 2 2018.03 - Rev. 1.0.2 WD1035DH Absolute Maximum Ratings (1) Parameter MIN MAX Unit Power Supply VCC -0.3 6.5 V Others Pins -0.3 VCC+0.6 V 2.19 W Package Thermal Resistance TJA 50 °C /W Package Thermal Resistance TJC 8 °C /W Junction Temperature TJ 150 °C Lead Temperature (Soldering,10 sec) 260 °C 150 °C Power Dissipation, PD @ TA =25℃，DFN2X2-8L Storage Temperature Range ESD Ratings (1) -65 HBM 2000 V CDM 2000 V Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Recommended Operating Conditions Parameter MIN MAX Unit Power Supply VCC 2.7 5.5 V Junction temperature TJ -40 125 °C Ambient temperature TA -40 85 °C Will Semiconductor Ltd. 3 2018.03 - Rev. 1.0.2 WD1035DH Electronics Characteristics Unless otherwise specified: limits for typical values are for TA = 25℃ and minimum and maximum limits apply over the operating ambient temperature range (-40℃ < TA < 85℃); VIN=4.2V,Vout=2.5V,L1=1uH,Cout=22uF. Parameter Symbol Operation Voltage Range VIN Test Conditions Min Typ 2.7 Max Unit 5.5 V VUVLO-H VIN Rising 2.45 V VUVLO-L VIN Falling 2.25 V Quiescent Current IQ Switching 45 uA Shutdown Current ISD VEN =GND, VIN =3.6V Feedback Reference VREF Line Regulation ΔVOUT /ΔVIN 0.35 PFET Rdson Rdson P 100 NFET Rdson Rdson N 60 PFET Current Limit ILIMT 4.5 A Oscillator Frequency FOSC 1.5 MHz Max Duty Cycle 100 % Soft Start Time 800 uS Power on delay time 25 uS 6.3 V 6 V 20 uS 150 °C 30 °C VIN Under Voltage Lockout Input OVP shutdown VOVP 0.588 Rising Falling 5.6 Over Volatage Protection Blanking Time Thermal Shutdown Thermal Shutdown Hysteresis EN Input LOW Voltage VIL EN Input HIGH Voltage VIH Will Semiconductor Ltd. 0.6 1 μA 0.612 V %/V mΩ 0.4 1.4 4 V V 2018.03 - Rev. 1.0.2 WD1035DH Typical Characteristics 100 100 90 90 80 80 70 70 Efficieny(%) Efficieny(%) (Ta=25oC, VIN=5V, VEN=VIN, CIN=10μF ,COUT=22μF, L1=1μH, unless otherwise noted) 60 50 40 30 10 0 500 1000 1500 2000 2500 50 40 30 VIN=2.7V VIN=3.6V VIN=5.5V VOUT=1.8V,L=1uH 20 60 VIN=2.7V VIN=3.6V VIN=5.5V VOUT=0.6V,L=1uH 20 10 0 3000 0 500 Load Current (mA) Efficieny vs.Load Current 0.615 1.82 0.610 Output Voltage (V) Output Voltage (V) 2000 2500 3000 0.605 1.81 1.80 1.79 1.78 1.77 1.76 1.75 VIN=2.7V VIN=3.6V VIN=5.5V VOUT=1.8V,L=1uH 1.74 1.73 0 500 0.600 0.595 0.590 0.585 0.580 0.575 0.570 VIN=2.7V VIN=3.6V VIN=5.5V VOUT=0.6V,L=1uH 0.565 0.560 0.555 1000 1500 2000 2500 0.550 3000 0 Output Current (mA) Output Voltage vs.Output Current 1.80 1.85 1.79 1.84 1.78 1.83 1.77 1.76 1.75 1.74 1.73 1.72 1.71 1.70 -50 VIN=2.7V VIN=3.6V VIN=5.5V VOUT=1.8V,L=1uH IOUT=2A -25 0 1000 1500 2000 25 50 75 100 2500 3000 1.82 1.81 1.80 1.79 VIN=2.7V VIN=3.6V VIN=5.5V VOUT=1.8V,L=1uH IOUT=1mA 1.78 1.77 1.76 1.75 -50 125 -25 0 25 50 75 100 125 Temperature (،‫)و‬ Output Voltage vs.Temperature Temperature (،‫)و‬ Output Voltage vs.Temperature Will Semiconductor Ltd. 500 Output Current (mA) Output Voltage vs.Output Current Output Voltage (V) Output Voltage (V) 1500 Load Current (mA) Efficieny vs.Load Current 1.83 1.72 1000 5 2018.03 - Rev. 1.0.2 WD1035DH 0.14 55 0.12 Shutdown Current(uA) 60 IQ(uA) 50 45 40 35 EN=VIN L=1uH,VO=1.8V 30 2.5 3.0 3.5 4.0 4.5 5.0 0.10 0.08 0.06 0.04 0.02 0.00 2.5 5.5 Input Voltage (V) Supply Current vs. Input Voltage 3.5 4.0 4.5 5.0 5.5 Oscillator Frequency(MHz) 1.66 1.60 Frequency (MHz) 3.0 Input Voltage (V) Shutdown Current vs. Input Voltage 1.62 1.58 1.56 1.54 1.52 L=1uH,VO=1.8V VIN=3.6V,IOUT=1000mA 1.50 -50 EN=0V L=1uH VOUT=1.8V -25 0 25 50 75 100 1.62 1.60 1.58 1.56 1.54 1.52 1.50 1.48 1.46 2.5 125 Temperature (،‫)و‬ Frequency vs. Temperature Will Semiconductor Ltd. 1.64 IO=1000mA L=1uH,VO=1.8V 3.0 3.5 4.0 4.5 5.0 5.5 Input Voltage (V) Oscillator Frequency VS. Input Voltage 6 2018.03 - Rev. 1.0.2 WD1035DH VIN=3.6V, VO=1.8V，EN=3.6V , IO=2A, EN On VIN=3.6V, VO=1.8V，EN=3.6V , IO=1A, EN Off Load Transient Response Load Transient Response VIN=5V,VO=1.8V,EN=3.6V,IO=1mA-2A Ripple : VIN=5.0V, VO=0.6V，EN=3.6V Will Semiconductor Ltd. IO=1A VIN=5V,VO=0.6V,EN=5V,IO=1mA-2A Ripple : VIN=5.0V, VO=0.6V，EN=3.6V 7 IO=2A 2018.03 - Rev. 1.0.2 WD1035DH Ripple : VIN=5.0V, VO=1.8V，EN=3.6V VIN=3.6V, VO=1.8V，EN=3.6V Will Semiconductor Ltd. IO=1A Ripple : VIN=5.0V, VO=1.8V，EN=3.6V IO=2A VOUT short 8 2018.03 - Rev. 1.0.2 WD1035DH Operation Information WD1035DH is synchronous a high efficiency 1.5MHz ripple current. It is suggested to choose the ripple Step-Down DC/DC regulator IC current to be about 40% of the maximum output capable of delivering up to 3A output current. It can current. The inductance is calculated as: operate over a wide input voltage range from 2.7V L= to 5.5V and integrate main switch and synchronous switch with very low RDSON to minimize the conduction loss. Application Information Because of the high integration in the WD1035DH IC, the application circuit based on this regulator IC is rather simple. Only input capacitor Cin, output Where Fsw is the switching frequency and Iout,max is the maximum load current. 2) The saturation current rating of the inductor must be selected to be greater than the peak inductor current under full load conditions. ISAT,MIN > IOUT,MAX + capacitor Cout, output inductor L and feedback resistors (RH and RL) need to be selected for the targeted applications specifications. Feedback resistor dividers RH and RL : Choose RH and RL to program the proper output voltage. To minimize the power consumption under light loads, it is desirable to choose larger resistance values for both RH and RL. A value of between 100kΩ and 1MΩ is highly recommended for both resistors. If RL =120kΩ is chosen, then RH can be calculated to be: (Vout − 0.6V) ∗ R L RH = 0.6V VOUT (1 − Vout /VIN,MAX ) FSW × IOUT,MAX×40% VOUT (1 − Vout /VIN,MAX ) 2 ∗ FSW ∗ L 3) The DCR of the inductor and the core loss at the switching frequency must be low enough to achieve the desired efficiency requirement. It is desirable to choose an inductor with DCR