ESD9N5B-2/TR

ESD9N5B ESD9N5B 1-Line, Bi-directional, Normal-Capacitance, http//:www.omnivision-group.com Transient Voltage Suppressor Descriptions The ESD9N5B is a Bi-directional transient voltage suppressor (TVS) to protect sensitive electronic components from electrostatic discharge (ESD). It is DFN1006-2L (Bottom View) particularly well-suited for cellular phones, PMP, MID, PDA, digital cameras and other electronic equipment. The ESD9N5B may be used to provide ESD protection up to ±30kV (contact and air discharge) according to Pin1 Pin2 IEC61000-4-2, and withstand peak pulse current up to 8A (8/20μs) according to IEC61000-4-5. The ESD9N5B is available in DFN1006-2L package. Pin configuration Standard products are Pb-free and Halogen-free. Features  Reverse stand-off voltage: ±5V Max  Transient protection for each line according to *B IEC61000-4-2 (ESD): ±30kV (Contact and Air) IEC61000-4-4 (EFT): 40A (5/50ns) * = Month (A~Z) IEC61000-4-5 (surge): 8A (8/20μs)  Capacitance: CJ = 17.5pF typ.  Low leakage current: IR < 1nA typ.  Low clamping voltage  Solid-state silicon technology B = Device code Marking Order information Applications  Cell phone  PMP  MID  PDA  Digital camera  Other electronics equipment Will Semiconductor Ltd. 1 Device Package Shipping ESD9N5B-2/TR DFN1006-2L 10000/Tape&Reel Revision 3.6, 2022/04/22 ESD9N5B Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp=8/20μs) Ppk 96 W Peak pulse current (tp=8/20μs) Ipp 8 A ESD according to IEC61000-4-2 air discharge ±30 VESD ESD according to IEC61000-4-2 contact discharge kV ±30 TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC TSTG -55~150 oC Junction temperature Storage temperature Electrical characteristics (TA=25 oC, unless otherwise noted) I VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VCL VTRIG VHOLD VBR VRWM IBR ITRIG IR IR ITRIG IBR VRWM VBR VHOLD VTRIG VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP IHOLD Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 3.6, 2022/04/22 ESD9N5B Electronics characteristics (Ta=25 oC, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reverse leakage current IR Reverse breakdown voltage Min. Typ. VRWM = 5.0V VBR Reverse holding voltage Condition VHOLD Max. Unit ±5.0 V 1 μA IBR = 1mA 5.6 8.5 V IHOLD = 50mA 5.6 8.5 V Clamping voltage 1) VCL IPP = 16A, tp = 100ns 11 V Clamping voltage 2) VCL VESD = 8kV 11 V Clamping voltage 3) VCL Junction capacitance IPP = 1A, tp = 8/20μs 9 V IPP = 8A, tp = 8/20μs 12 V VR = 0V, f = 1MHz 17.5 22 pF VR = 5.0V, f = 1MHz 11.5 15 pF CJ Notes: 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. 100 90 Front time: T1= 1.25 T = 8μs 100 90 Time to half-value: T2= 20μs Current (%) Peak pulse current (%) 2) 50 T2 10 0 0 10 T 5 T1 10 15 Time (μs) 20 25 tr = 0.7~1ns 8/20μs waveform per IEC61000-4-5 Will Semiconductor Ltd. 60ns 30ns 30 t Time (ns) Contact discharge current waveform per IEC61000-4-2 3 Revision 3.6, 2022/04/22 ESD9N5B Typical characteristics (Ta=25oC, unless otherwise noted) CJ - Junction capacitance (pF) VC - Clamping voltage (V) 11 Pulse waveform: tp = 8/20s 10 Pin2 to Pin1 9 Pin1 to Pin2 8 20 f = 1MHz VAC = 50mV 18 16 14 12 7 0 1 2 3 4 5 6 7 8 10 -5 9 IPP - Peak pulse current (A) -4 -3 -2 -1 0 1 2 3 4 5 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 10V/div 10V/div 20ns/div 20ns/div ESD clamping ESD clamping TLP current (A) (+8kV contact discharge per IEC61000-4-2) 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -14 -12 -10 -8 -6 -4 -2 0 (-8kV contact discharge per IEC61000-4-2) Z0 = 50 tr = 2ns tp = 100ns 2 4 6 8 10 12 14 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 4 Revision 3.6, 2022/04/22 ESD9N5B PACKAGE OUTLINE DIMENSIONS DFN1006-2L I b 1. II 2. 3. L E I II 1. III e 2. D III 1. BOTTOM VIEW TOP VIEW 2. 0.55 SIDE VIEW Symbol A3 A1 A 0.6 0.3 0.85 1.4 RECOMMENDED LAND PATTERN(Unit:mm) Dimensions in Millimeters Min. Typ. Max. A 0.36 0.45 0.50 A1 0.00 0.02 0.05 A3 0.125 Ref. D 0.95 1.00 1.05 E 0.55 0.60 0.65 b 0.20 0.25 0.30 L 0.45 0.50 0.55 e Will Semiconductor Ltd. 0.65 BSC 5 Revision 3.6, 2022/04/22 ESD9N5B TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 6 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 Q4 Revision 3.6, 2022/04/22