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ESD5Z7V-2/TR

ESD5Z7V-2/TR

  • 厂商:

    WILLSEMI(韦尔)

  • 封装:

    SOD-523(SC-79)

  • 描述:

    TVS VRWM=7V VBR(Min)=7.5V VC=12V IPP=1A Ppp=171W SOD523

  • 数据手册
  • 价格&库存
ESD5Z7V-2/TR 数据手册
ESD5Z7V ESD5Z7V 1-Line, Uni-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5Z7V is a TVS (Transient Voltage Suppressor) designed to protect sensitive electronic components which are connected to power lines, low speed data lines and transmission lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) SOD-523 and surge. The ESD5Z7V may be used to provide ESD protection up to ±30kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 9.5A (8/20μs) according Pin1 to IEC61000-4-5. Pin2 The ESD5Z7V is available in SOD-523 package. Standard products are Pb-free and Halogen-free. Features  Stand-off voltage: 7V Max  Transient protection for each line according to Circuit diagram IEC61000-4-2 (ESD): ±30kV (contact and air discharge) IEC61000-4-4 (EFT): 80A (5/50ns) IEC61000-4-5 (surge): 9.5A (8/20μs)  Capacitance: CJ = 47pF typ.  Low leakage current  Low clamping voltage  Solid-state silicon technology Applications  Computers and peripherals  Cellular handsets  Microprocessors  Power lines  Portable Electronics  Notebooks Will Semiconductor Ltd. * 1 J J = Device code * = Month code 2 Marking & Pin configuration (Top View) Order information 1 Device Package Shipping ESD5Z7V-2/TR SOD-523 3000/Tape&Reel Revision 3.0, 2014/07/11 ESD5Z7V Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) PPK 171 W Peak pulse current (tp = 8/20μs) IPP 9.5 A ESD according to IEC61000-4-2 air discharge ±30 VESD ESD according to IEC61000-4-2 contact discharge Operation junction temperature ±30 125 o TL 260 o TSTG -55~150 o TJ Lead temperature Storage temperature kV C C C Electrical characteristics (TA = 25oC, unless otherwise noted) I IPP VF Forward voltage VRWM Reverse stand-off voltage IF Forward current IR Reverse leakage current VFC Forward clamping voltage VBR Reverse breakdown voltage IPP Peak pulse current VCL Clamping voltage IPP Peak pulse current VFC VF IBR IR VRWM VBR VCL V IF IPP Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 3.0, 2014/07/11 ESD5Z7V o Electrical characteristics (TA = 25 C, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit 7 V 1 µA Reverse stand-off voltage VRWM Reverse leakage current IR VRWM = 7V Reverse breakdown voltage VBR IBR = 1mA 7.5 10 V Forward voltage VF IF = 20mA 0.55 1.25 V IPP = 1A, tp = 8/20μs 12 V IPP = 9.5A, tp = 8/20μs 18 V 65 pF Clamping voltage 1) VCL Junction capacitance CJ VR = 0V, f = 1MHz 47 Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5. 110 100 90 80 70 60 50 40 30 20 10 0 100 90 Front time: T1= 1.25 × T = 8µs Time to half-value: T2= 20µs Current (%) Peak pulse current (%) Typical characteristics (TA = 25oC, unless otherwise noted) T2 10 0 5 T T1 10 15 20 25 Time (µs) 30 35 8/20μs waveform per IEC61000-4-5 Will Semiconductor Ltd. 30ns 40 tr = 0.7~1ns 60ns t Time (ns) Contact discharge current waveform per IEC61000-4-2 3 Revision 3.0, 2014/07/11 ESD5Z7V o Typical characteristics (TA = 25 C, unless otherwise noted) 13 50 12 11 10 9 f = 1MHz 45 Junction capacitance (pF) VC - Clamping voltage (V) Pulse waveform: tp = 8/20µs 40 35 30 25 20 8 0 1 15 2 3 4 5 6 7 8 9 10 IPP - Peak pulse current (A) Clamping voltage vs. Peak pulse current 0 1 2 3 4 5 6 VR - Reverse voltage (V) Capacitance vs. Reveres voltage 7 1000 100 % of Rated power Peak pulse power (W) 100 10 80 60 40 20 1 0 1 10 100 Pulse time (µs) 1000 0 25 50 75 100 125 TA - Ambient temperature (oC) Non-repetitive peak pulse power vs. Pulse time Power derating vs. Ambient temperature ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) Will Semiconductor Ltd. 150 4 Revision 3.0, 2014/07/11 ESD5Z7V Package outline dimensions SOD-523 Symbol Dimensions In Millimeters Min. Typ. Max. A 0.510 -- 0.770 A1 0.500 -- 0.700 b 0.250 0.300 0.350 c 0.080 -- 0.150 D 0.750 0.800 0.850 E 1.100 1.200 1.300 E1 1.500 1.600 1.700 E2 L 0.200 REF. 0.010 -- θ 0.070 o 7 REF. Recommend Land Pattern (Unit: mm) 0.60 Notes: 0.70 This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. 1.40 Will Semiconductor Ltd. 5 Revision 3.0, 2014/07/11
ESD5Z7V-2/TR 价格&库存

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ESD5Z7V-2/TR
  •  国内价格
  • 50+0.12001
  • 500+0.10801
  • 5000+0.10001
  • 10000+0.09600
  • 30000+0.09200
  • 50000+0.08960

库存:0

ESD5Z7V-2/TR
    •  国内价格
    • 1+0.76560
    • 200+0.25520
    • 1500+0.15950
    • 3000+0.11000

    库存:778

    ESD5Z7V-2/TR
    •  国内价格
    • 20+0.99080
    • 100+0.84220
    • 300+0.34170
    • 800+0.28070
    • 3000+0.12220

    库存:778

    ESD5Z7V-2/TR
      •  国内价格
      • 20+0.18468
      • 200+0.14829
      • 600+0.12798

      库存:2857