WPM2081-3/TR

WPM2081 WPM2081 Http://www.sh-willsemi.com Single P-Channel, -20V, -4A, Power MOSFET VDS (V) Typical RDS(on) (mΩ) -20 41 @ VGS=-4.5V 55 @ VGS=-2.5V SOT-23 Descriptions The WPM2081 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2081 is Pb-free. Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package SOT-23 PB = Device Code Y = Year W = Week(A~z) Marking Applications Order information  DC/DC converters  Power supply converters circuit  Load/Power Switching for portable device Will Semiconductor Ltd. Device Package Shipping WPM2081-3/TR SOT-23 3000/Tape&Reel 1 2022/04/22- Rev.1.3 WPM2081 Absolute Maximum ratings Parameter Symbol 10 s Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current a Maximum Power Dissipation b TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V -4 -3.5 -3.2 -2.8 0.96 0.80 0.62 0.52 A W Pulsed Drain Current c IDM -12 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Single Operation Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Case Thermal Resistance a. Symbol t ≤ 10 s Steady State Steady State Typical Maximum 79 99 104 130 40 60 RθJA RθJC Unit °C/W The value of RθJA is measured with the device mounted on 1-inch2 (6.45cm2) with 2oz.(0.071mm thick) Copper pad on a 1.5*1.5 inch2, 0.06-inch thick FR4 PCB, in a still air environment with TA =25°C. The value in any given application is determined by the user's specific board design b. The power dissipation PD is based on Junction-to-Ambient thermal resistance RθJA t ≤ 10s value and the TJ(MAX)=150°C. c. Repetitive rating, ~10us pulse width, duty cycle ~1%, keep initial TJ =25°C, the maximum allowed junction temperature of 150°C. d. The static characteristics are obtained using ~380us pulses, duty cycle ~1%. Will Semiconductor Ltd. 2 2022/04/22- Rev.1.3 WPM2081 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA Zero Gate Voltage Drain Current IDSS VDS =-16V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±12V VGS(TH) VGS = VDS, ID = -250uA -20 V -1 uA ±100 nA -0.65 -1 V VGS =-4.5V, ID = -3.2A 41 52 VGS = -2.5V, ID = -3.0A 55 81 VGS = -1.8V, ID = -2.5A 72 110 VDS = -5 V, ID = -4A 6 16 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS -0.35 mΩ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = -4.5 V, VDS = -10 V, 0.8 Gate-to-Source Charge QGS ID =-3.3 A 1.8 Gate-to-Drain Charge QGD 1.7 Turn-On Delay Time td(ON) 11.4 Rise Time tr VGS = -4.5 V, VDS =-6 V, 6.8 Turn-Off Delay Time td(OFF) ID=-3.3A, RG=6Ω 67.6 Fall Time tf VGS = 0 V, f = 1.0MHz, VDS = -6 V 1062 146 pF 124 10 nC SWITCHING CHARACTERISTICS ns 16.8 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = -3.2A 3 -0.8 -1.5 V 2022/04/22- Rev.1.3 WPM2081 20 Typical Characteristics (Ta=25oC, unless otherwise noted) 20 20 VGS=-2.5V 15 -IDS-Drain to Source Current (A) 15 VGS=-4.5V VGS=-3.5V 10 5 VGS=-1.5V 0 0.0 0.5 1.0 1.5 2.0 VDS=-5V o T=25 C 15 o T=125 C o T=-50 C 10 5 0 0.5 2.5 -VDS-Drain to Source Voltage (V) 1.0 1.5 2.0 2.5 -VGS -Gate to Source Voltage(V) Output characteristics Transfer characteristics 0.10 0.14 ID=-4.0A 0.09 RDS(ON)-Resistance (Ω) VGS=5.5V 10 0.08 VGS=-2.5V 0.07 0.06 0.05 0.04 VGS=-4.5V 0.02 0.12 0.10 0.08 0.06 0.04 0.03 0.02 4 8 12 16 20 1 -IDS-Drain to Source Current(A) On-Resistance vs. Drain current 1.3 VGS=-4.5V ID=-4.0A 1.2 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 4 1.3 5 ID=-250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 150 o 0 50 100 150 o Temperature ( C) Temperature ( C) On-Resistance vs. Junction temperature Will Semiconductor Ltd. 3 On-Resistance vs. Gate-to-source voltage 1.5 1.4 2 -VGS -Gate to Source Voltage(V) Gate Threshold Voltage Normalized VGS=6V 5 VDS-Drain-to-Source Voltage(V) -IDS-Drain to Source Current (A) =8V GS 0 RDS(ON)-Resistance(Ω) VGS=10VV 0 RDS(ON)-On-Resistance Normalized IDS-Drain-to-Source Current (A) 6 4 2 Threshold voltage vs. Temperature 4 2022/04/22- Rev.1.3 WPM2081 10 Capacitance (pF) 1000 Ciss 800 600 Crss 400 Coss 200 0 2 6 4 9 -ISD-Source to Drain Current (A) F=1MHz 1200 8 8 7 6 5 4 o 2 1 10 0.0 0.4 0.2 0.6 0.8 1.0 1.2 -VSD-Source to Drain Voltage (V) Capacitance Body diode forward voltage 100 120 o TJ(MAX)=150 C 100 o -ID-Drain Current (A) TA=25 C 80 Power (W) T=25 C 3 -VDS-Drain to Source Voltage (V) 60 40 10 Limit by Rdson 100us 1ms 1 10ms 10s 100ms 0.1 1s DC o 20 TA=25 C Single Pulse 0 1E-4 o T=150 C 1E-3 0.01 0.1 1 10 100 0.1 1000 Pulse width (S) BVDSS Limit 1 10 -VDS-Drain to Source Voltage(V) 100 *VGS>minimum VGS at which RDS(ON) is specified Single pulse power Safe operating power -VGS-Gate to Source Voltage (V) 4.5 4.0 VDS=-10V 3.5 ID=-3.3A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 Qg(nC) Will Semiconductor Ltd. 5 2022/04/22- Rev.1.3 WPM2081 10 Normalized Effective Transient Thermal Impedance In Descending Order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pluse 1 0.1 single pulse 0.01 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Transient Thermal Response (Junction-to-Ambient) Will Semiconductor Ltd. 6 2022/04/22- Rev.1.3 WPM2081 PACKAGE OUTLINE DIMENSIONS SOT-23 D Ⅰ 1. L L1 b K E E1 2.(N/A) θ M e Ⅰ c e1 SIDE VIEW TOP VIEW 2.90 0.90 0.80 0.90 A A1 0.80 SIDE VIEW 0.95 RECOMMENDED LAND PATTERN(unit:mm) Symbol Dimensions in Millimeters Min. Typ. Max. A 0.89 1.10 1.30 A1 0.00 - 0.10 b 0.30 0.43 0.55 c 0.05 - 0.20 D 2.70 2.90 3.10 E 1.15 1.33 1.50 E1 2.10 2.40 2.70 e 0.95 Typ. e1 1.70 1.90 2.10 L 0.45 0.55 0.65 L1 0.20 0.35 0.60 M 0.10 0.15 0.25 K 0.00 - 0.25 θ 0 - 8 Will Semiconductor Ltd. 7 2022/04/22- Rev.1.3 WPM2081 TAPE AND REEL INFORMATION RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. 8 User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 Q4 2022/04/22- Rev.1.3