KIA6035AD

KIA 11A, 350V N-CHANNEL MOSFET 6035A SEMICONDUCTORS 1.Description This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 2. Features n RDS(ON)=0.38Ω@VGS=10V. n Low gate charge (typical 15nC) n High ruggedness n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pin configuration 1 of 5 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.0 JAN 2015 11A, 350V N-CHANNEL MOSFET KIA 6035A SEMICONDUCTORS 4. Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-source voltage Drain current continuous VDSS VGSS TC=25ºC TC=100ºC ID Drain current pulsed (note1) Avalanche Enlsed IDM EAR EAS IAR dv/dt Repetitive (note1) Single pulse (note2) Avalanche current (note 1) Peak diode recovery dv/dt (note3) TC=25ºC Total power dissipation PD Derate above 25ºC Operating and storage temperature range TJ, TSTG Maximum lead temperature for soldering TL Purposes,1/8`` form case for 5 seconds *Drain current limited by maximum junction temperature. (TC= 25ºC, unless otherwise noted) Rating Units TO-220 TO-252 350 V ±20 V 11 11* A 6.6 6.6* A 36 A 9.91 mJ 423 mJ 9.0 A 4.5 V/ns 99 W 0.79 W/ ºC -55~+150 ºC ºC 300 5. Thermal characteristics Parameter Symbol Rating Unit Thermal resistance,Junction-amient RthJA 62.5 ºC/W Thermal resistance,case-to-sink typ. RthJS 0.5 ºC/W Thermal resistance,Junction-case RthJC 1.26 ºC/W 2 of 5 Rev 1.0 JAN 2015 KIA 11A, 350V N-CHANNEL MOSFET 6035A SEMICONDUCTORS 6. Electrical characteristics Parameter Off characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Forward current Reverse Breakdown voltage temperature coefficient On characteristics Gate threshold voltage Static drain-source on- resistance Forward transconductance Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Switching characteristics Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Drain-source diode characteristics drain-source diode forward voltage Continuous drain-source current Pulsed drain-source current Reverse recovery time Reverse recovery charge (TC= 25 ºC, unless otherwise noted) Test conditions Min Typ Max Unit Symbol BVDSS VGS=0V,ID=250μA VDS=350V, VGS=0V VDS=280V, TC=125ºC VGS=20V, VDS=0V VGS=-20V,VDS=0V 350 - - 1 10 10 -10 V μA μA uA uA △BVDSS/△TJ ID=250μA - 0.35 - V/ ºC VGS(TH) RDS(ON) gFS VDS= VGS ID=250μA VDS=10V,ID=4.5A VDS=40V,ID=4.5A(note4) 2.0 - 0.38 7.8 4.0 0.48 - V Ω S CISS COSS CRSS VDS=25V,VGS=0V, f=1MHz - 844 162 4 - pF pF pF - 25 23.5 77 47.5 15 4 5 - ns ns ns ns nC nC nC - - 1.4 11 36 - V A A ns μC IDSS IGSS tD(ON) tR tD(OFF) tF QG QGS QGD VSD IS ISM* tRR QRR VDD=175V,ID=9.0A, RG=25Ω (note4,5) VDS=280V,ID=9.0A VGS=10V (note4,5) VGS=0V,ISD=11A IS=9.0A dISD/dt=100A/μs (note4) 317 2.5 Notes:1.repetitive rating:pulse width limited by maximum junction temperature 2.L=6.3mH,IAS=9.0A,VDD=50V,RG=25Ω,starting TJ=25ºC 3.ISD