KND3508A

KIA 70A，80V N-CHANNEL MOSFET 3508A SEMICONDUCTORS 1. Features n RDS(on)=9.5mΩ（typ.）@ VGS=10V n 100% avalanche tested n Reliable and rugged n Lead free and green device available（RoHS Compliant） 2. Applications n Switching application n Power management for inverter systems 3.Symbol 1 of 6 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.0 Aug. 2018 KIA 70A，80V N-CHANNEL MOSFET 3508A SEMICONDUCTORS 4. Ordering Information Part Number Package Brand KNB3508A TO-263 KIA KND3508A TO-252 KIA KNP3508A TO-220 KIA 5. Switching Time Test Circuit and Waveforms 5. Absolute maximum ratings Parameter Symbol (TA=25°C,unless otherwise noted) Rating Units To-220/263 To-252 Drain-source voltage VDSS 80 V Gate-source voltage VGSS ±25 V TJ 175 ºC TSTG -55 to175 ºC Maximum junction temperature Storage temperature range Continuous drain current Pulsed drain current TC=25ºC TC=100ºC TC=25ºC Avalanche current 2 of 6 ID3 70 60 A 46 36 A IDP 240 A IAS 70 A Rev 1.0 Aug. 2018 KIA 70A，80V N-CHANNEL MOSFET 3508A SEMICONDUCTORS 6. Electrical characteristics Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Gate leakage current Drain-source on-state resistance (TA=25°C,unless otherwise noted) Min Typ Max Units Symbol Test Conditions BVDSS VGS=0V,IDS=250uA 80 - - VDS=24V, VGS=0V - - 1 - - 30 IDSS TJ=85°C V μA VGS(th) VDS=VGS, ID=250μA 2.0 3.0 4.0 V IGSS VGS=+25V, VDS=0V - - +100 nA VGS=10V,IDS=35A - 9.5 11 mΩ RDS(on) Gate resistance Rg VDS=0V, VGS=0V,f=1MHz - 1.5 - Ω Diode forward voltage VSD ISD=20A, VGS=0V - 0.8 1.3 V Reverse recovery time trr ISD=35A , - 44 - nS Reverse recovery charge Qrr dlSD/dt=100A/μs - 60 - nC Input capacitance Ciss - 2900 - Output capacitance Coss - 290 - Reverse transfer capacitance Crss - 175 - Turn-on delay time td(on) - 14 - VDD=30V,IDS=1A, - 11 - RL=30Ω,VGEN=-10V - 51 - RG=6Ω - 22 - - 55 - - 12 -- - 16 -- Rise time tr Turn-off delay time Fall time td(off) tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDS=30V,VGS=0V, f=1MHz VDS=30V,VGS=10V IDS=35A Note : 1. Pulse test; pulse width