MMBT4403

MMBT4403 SOT-23 Plastic-Encapsulate Transistor MMBT4403 TRANSISTOR (PNP) SOT-23 FEATURES Switching transistor  1. BASE 2. EMITTER MARKING: 2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. COLLECTOR Symbol Value Unit Parameter VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -600 mA PC* Collector Power Dissipation 300 mW RӨJA Thermal Resistance, junction to Ambient 417 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA ,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 μA Collector cut-off current ICEX VCE=-35V, VBE=0.4V -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA hFE1 VCE=-1V, IC=-0.1mA 0 hFE2 VCE=-1V, IC=-1mA 0 hFE3 VCE=-1V, IC=-10mA 0 hFE4 VCE=-2V, IC=-150mA 100 hFE5 VCE=-2V, IC=-500mA 0 DC current gain Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat） 300 IC=-150mA,IB=-15mA -0.4 V IC=-500mA,IB=-50mA -0.75 V IC=-150mA,IB=-15mA -0.95 V IC=-500mA,IB=-50mA -1.3 V Transition frequency fT VCE=-10V, IC=-20mA,f =100MHz 200 MHz Delay time td VCC=-30V, VBE(off)=-0.5V 15 Qs Rise time tr IC=-150mA , IB1=-15mA 20 Qs Storage time ts VCC=-30V, IC=-150mA 225 Qs Fall time tf IB1=IB2=-15mA 0 Qs The above data are for reference only. https://www.microdiode.com Rev:2024A1 Page :1 MMBT4403 Typical Characteristics Static Characteristic -200 —— IC COMMON EMITTER VCE=-2V hFE Ta=100℃ DC CURRENT GAIN COLLECTOR CURRENT COMMON EMITTER Ta=25℃ -0.9mA -0.8mA -0.7mA -150 hFE 1000 -1mA IC (mA) -250 -0.6mA -0.5mA -100 -0.4mA -0.3mA -50 Ta=25℃ 100 -0.2mA IB=-0.1mA -0 10 -0 -2 -4 -6 COLLECTOR-EMITTER VOLTAGE VCEsat -700 —— VCE -1 (V) IC BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) IC (mA) IC —— β=10 -300 Ta=100℃ -100 Ta=25℃ -30 Ta=25℃ -0.8 Ta=100℃ -0.4 -0.0 -3 -1 -600 -100 VBEsat -1.2 β=10 -10 -10 COLLECTOR CURRENT -10 -30 -100 COLLECTOR CURRENT IC -600 IC -600 -1 -3 (mA) -10 -100 -30 COLLECTOR CURRENT —— VBE Cob/ Cib 50 —— IC -600 (mA) VCB/ VEB f=1MHz IE=0/IC=0 (pF) -10 C Ta=100℃ Ta=25℃ -1 -0.1 -0.0 -0.4 Cob 10 CAPACITANCE COLLECTOR CURRENT Ta=25℃ Cib -100 IC (mA) COMMON EMITTER VCE=-2V -0.8 1 -0.1 -1.2 -1 fT -600 -10 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— IC PC 400 —— V -30 (V) Ta VCE=-10V COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25℃ -100 -10 300 200 100 0 -1 -10 -3 COLLECTOR CURRENT https://www.microdiode.com IC -30 0 (mA) The curve above is for reference only. 25 50 75 AMBIENT TEMPERATURE Rev:2024A1 100 Ta 125 150 (℃ ) Page :2 MMBT4403 Outlitne Drawing SOT-23 Package Outline Dimensions θ A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol 1 e Suggested Pad Layout 0.037 0.95 0.037 0.95 Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.55 10° 0.4 0° Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 inches mm PACKAGE SPECIFICATIONS Package Reel Size SOT-23 7' Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 330 3000 203×203×195 45000 438×438×220 180000 https://www.microdiode.com Rev:2024A1 Page :3