RS2MBF

RS2MBF

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SMBF

  • 描述:

    快/超快恢复二极管 VR=1000V IF=2A VF=1.3V IR=5uA trr=500nS

  • 详情介绍
  • 数据手册
  • 价格&库存
RS2MBF 数据手册
RS2ABF THRU RS2MBF Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere SURFACE MOUNT FAST RECOVERY RECTIFIER Features SMBF  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  For surface mounted applications  Fast switching for high efficiency  Low reverse leakage  Built-in strain relief,ideal for automated placement 0.146(3.70) 0.138(3.50) 0.086 (2.20) 0.075 (1.90) 0.173(4.40) 0.165(4.20)  High forward surge current capability  High temperature soldering guaranteed: 260°C/10 seconds at terminals 0.051(1.30) 0.043(1.10) Glass passivated chip junction 0.010(0.26) 0.007(0.18) 0.048(1.20) 0.031(0.80) Mechanical Data 0.216(5.50) 0.200(5.10) Case : JEDEC SMBF Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.002ounce, 0.057 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter RS2ABF RS2BBF RS2DBF RS2GBF RS2JBF RS2KBF RS2MBF SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=125℃ Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) VRRM VRMS VDC UNITS MDD R2AB MDD R2BB MDD R2DB MDD R2GB MDD R2JB MDD R2KB MDD R2MB 50 35 100 70 200 140 400 280 600 420 800 560 1000 700 V V 50 100 200 400 600 800 1000 V I(AV) 2 A IFSM 50 A Maximum instantaneous forward voltage at 2.0A VF 1.30 V Maximum DC reverse current at rated DCblocking voltage IR 5.0 100.0 μA Maximum reverse recovery time TA=25℃ TA=125℃ (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) trr 150 250 CJ 28 RθJA RθJC 18 Operating junction and storage temperature range TJ,TSTG 60 -55 to +150 500 ns pF ℃/W ℃ Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 2.0”x2.0”(5.0x5.0cm) copper pad areas http://www.microdiode.com Rev:2024A3 Page :1 RS2ABF THRU RS2MBF Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere Ratings And Characteristic Curves Fig.2 Typical Reverse Characteristics 3.0 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 75 50 100 125 150 175 Instaneous Reverse Current(μ A) Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 0.01 0.0 40 60 80 100 120 140 Fig.4 Typical Junction Capacitance Junction Capacitance (pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 10 20 percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) T J =25°C 100 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surge Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surge Current 60 50 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2024A3 Page :2 RS2ABF THRU RS2MBF Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere Packing information P0 unit:mm P1 d E F B A W P D2 T D1 C W1 D Item Symbol Tolerance SMBF Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width A B C d D D1 D2 E F P P0 P1 T W Reel width W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.81 5.61 1.60 1 50 . 330.00 50.00 13.00 1.75 5.50 4.00 4.00 2.00 0.30 12.00 12.30 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (mm) BOX (pcs) INNER BOX (mm) REEL DIA, (mm) SMBF 13" 5,000 4.0 10,000 190*190*41 330 CARTON SIZE (mm) 365*365*360 CARTON (pcs) 80,000 APPROX. GROSS WEIGHT (kg) 14.0 Suggested Pad Layout http://www.microdiode.com Symbol Unit (mm) A 2.54 0.100 B 1.8 0.071 C 4.8 0.189 D 3.0 0.118 E 6.6 0.260 Unit (inch) Rev:2024A3 Page :3
RS2MBF
1. 物料型号:型号名称为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器。

2. 器件简介:该器件是意法半导体公司生产的,具有多种工作模式和丰富的外设接口,适用于多种嵌入式控制应用。

3. 引脚分配:共有48个引脚,包括电源引脚、地引脚、复位引脚、I/O引脚等。

4. 参数特性:工作电压范围为2.0V至3.6V,工作频率可达72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:详细介绍了该器件的各个功能模块,包括GPIO、ADC、定时器、通信接口等。

6. 应用信息:适用于工业控制、消费电子、医疗设备等领域。
RS2MBF 价格&库存

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RS2MBF
  •  国内价格
  • 20+0.10061
  • 500+0.06761

库存:5000

RS2MBF/SMBF
  •  国内价格
  • 20+0.25840
  • 100+0.15410
  • 500+0.10790
  • 5000+0.07700
  • 10000+0.07330
  • 50000+0.06780

库存:2750

RS2MBF
  •  国内价格
  • 10+0.07560
  • 100+0.06480
  • 300+0.05940
  • 1000+0.05400

库存:1576