US2GBF

山东晶导微电子有限公司 US2ABF THRU US2MBF Jingdao Microelectronics Surface Mount Ultrafast Recovery Rectifier Reverse Voltage – 50V~1000 V PINNING Forward Current – 2.0 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • High efficiency • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: U2AB~U2MB Simplified outline SMBF symbol MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 5 7mg / 0.002oz Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols US2ABF US2BBF US2DBF US2GBF US2JBF US2KBF US2MBF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Parameter Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 2 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 50 A Maximum Instantaneous Forward Voltage at 2 A VF Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Maximum Reverse Recovery Time （1） Typical Thermal Resistance （2） Operating and Storage Temperature Range 1.0 1.3 5 100 IR t rr 1.65 μA 75 50 V ns RθJA RθJC 60 18 °C/W T j , T stg -55 ~ +150 °C （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.12 SMBF-U-US2ABF~US2 M BF-2A1KV Page 1 of 3 山东晶导微电子有限公司 US2ABF THRU US2MBF Jingdao Microelectronics Fig.2 Typical Reverse Characteristics 3.0 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Peak Forward Surage Current (A) Instaneous Forward Current (A) T J =25°C 1.0 US2ABF~US2DBF US2GBF 0.1 US2JBF~US2MBF 0.01 0.001 0 0.5 1.0 1.5 2.0 60 80 100 120 140 60 50 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 2.5 Instaneous Forward Voltage (V) 2016.12 40 Fig.4 Maximum Non-Repetitive Peak Forward Surage Current Fig.3 Typical Forward Characteristics 10 20 percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) 1 10 100 Number of Cycles www.sdjingdao.com Page 2of 3 山东晶导微电子有限公司 US2ABF THRU US2MBF Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMBF ∠ALL ROUND C A ∠ALL ROUND D E A V M g Top View mil Bottom View g A C D E HE e max 1.3 0.26 4.4 3.7 5.5 2.2 min 1.1 0.18 4.2 3.5 5.1 1.9 max 51 10 173 146 216 86 min 43 7 165 138 200 75 UNIT mm g pad e E A pad HE 1.0 9° 40 Marking The recommended mounting pad size Type number 3.0(118) Unit：mm(mil) 2016.12 Marking code 1.8(71) 2.54(100) 1.8(71) ∠ JD512266B0 US2ABF U2AB US2BBF U2BB US2DBF U2DB US2GBF U2GB US2JBF U2JB US2KBF U2KB US2MBF U2MB Page 3 of 3