ULN2003

ULN2003 High-voltage High-current Darlington Transistor Arrays Features  500-mA-Rated Collector Current(single output)  High input voltage (up to 5.5V)  Inputs Compatible With Various Types of Logic  Relay-Driver Applications  High-Voltage Outputs:50V General Description The ULN2003 is high-voltage high-current Darlington transistor arrays each containing seven open collector common emitter pairs. Each pair is rated at 500mA. Suppression diodes are included for inductive load driving, the inputs and outputs are pinned in opposition to simplify board layout. These devices are capable of driving a wide range of loads including solenoids, relays, DC motors, LED displays, filament lamps, thermal print-heads and high-power buffers. The ULN2003 is available in both a small outline 16-pin package (SOP16). Connection Diagram SI PR O IN Pin Assignments Ver1.1 1 Shanghai Siproin Microelectronics Co. ULN2003 High-voltage High-current Darlington Transistor Arrays Pin Descriptions Pin Name Function 1 1B Input pair1 2 2B Input pair1 3 3B Input pair1 4 4B Input pair1 5 5B Input pair1 6 6B Input pair1 7 7B Input pair1 8 E Common Emitter (ground) 9 COM Common Clamp Diodes 10 7C Output pair7 11 6C Output pair6 12 5C 13 4C 14 3C 15 2C IN Pin Number Output pair5 Output pair4 Output pair3 PR O Output pair2 16 1C Output pair1 SI Functional Block Diagram Note: All resistor values shown are nominal. The collentor-emitter diode is a parasitic structure and should not be used to conduct current.If the collector(s) go below ground an external Schoottky diode should be added to clamp negative undershoots. Ver1.1 2 Shanghai Siproin Microelectronics Co. ULN2003 High-voltage High-current Darlington Transistor Arrays Absolute Maximum Ratings (1) At 25°C free-air temperature (unless otherwise noted) Symbol Parameter Max VCC VR VI ICP Collector to emitter voltage 50 V Clamp diode reverse voltage(2) Input voltage(2) Peak collector current 50 30 500 V V mA IOK ITE Output clamp current Total emitter-terminal current 500 –2.5 mA A TA Operating free-air temperature range 70 °C Min See typical characteristics ULN2003 –20 Unit θJA Thermal Resistance Junction-to-Ambient(3) 63 θJC Thermal Resistance Junction-to-Case(4) 12 TJ TSTG Operating virtual junction temperature 150 °C 150 °C Storage temperature range –65 °C/W IN (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. PR O Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted. (3) Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability. (4) Maximum power dissipation is a function of TJ(max), θJC, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) – TA)/θJC. Operating at the SI absolute maximum TJ of 150°C can affect reliability. Recommended Operating Conditions Symbol VCC TA Ver1.1 Parameter Collector to Emitter voltage Operating Ambient Temperature 3 Min 40 Max 50 +105 Unit V ℃ Shanghai Siproin Microelectronics Co. ULN2003 High-voltage High-current Darlington Transistor Arrays Electrical Characteristics(TA=+25℃, unless otherwise specified) Parameter I(on) V CE(sat) I V F I MAX -- 2.4 IC = 250 mA -- -- 2.7 IC = 300 mA -- -- 3 II = 250 μA, IC = 100 mA -- 0.9 1.1 II = 350 μA, IC = 200 mA -- 1 1.3 II = 500 μA, IC = 350 mA -- 1.2 1.6 Figure 1 VCE = 50 V, II = 0 -- -- 50 Figure 2 VCE = 50 V, TA = +105°C II = 0 -- -- 100 Clamp forward voltage Figure 8 IF = 350 mA -- 1.7 2 V Off-state input current Figure 3 VCE = 50 V, 50 65 -- μA VI = 3.85 V -- 0.93 1.35 VI = 5 V -- -- -- VI = 12 V -- -- -- -- -- 50 -- -- 100 -- 15 25 On-state input voltage Collector-emitter saturation voltage Input current II TYP -- Figure 6 Figure 5 VCE = 2 V Clamp reverse current Ci Input capacitance Figure 7 IC = 500 μA VR = 50 V VI = 0, V TA = 70°C f = 1 MHz mA μA pF SI IR Figure 4 V μA PR O I(off) Unit MIN IC = 200 mA Collector cutoff current CEX Test Conditions IN V ULN2003 Test Figure Switching Characteristics (TA = +25°C, unless otherwise specified) ULN2003 Parameter Test Conditions UNIT MIN t TYP MAX PLH Propagation delay time, low- to high-level output See Figure 9 0.25 1 μs PHL Propagation delay time, high- to low-level output See Figure 9 0.25 1 μs t V OH Ver1.1 High-level output voltage VS = 50 V, IO = 300 mA, after switching See Figure 9 4 VS–20 mV Shanghai Siproin Microelectronics Co. ULN2003 High-voltage High-current Darlington Transistor Arrays SI PR O IN Parameter Measurement Information Ver1.1 5 Shanghai Siproin Microelectronics Co. ULN2003 High-voltage Notes: PR O IN High-current Darlington Transistor Arrays 8. The pulse generator has the following characteristics: Pulse Width=12.5Hz, output impedance 50Ω, tr≤5ns, tr≤10ns. 9. CL includes prove and jig capacitance. SI 10. VIH=3V Ver1.1 6 Shanghai Siproin Microelectronics Co. ULN2003 High-voltage High-current Darlington Transistor Arrays Packaging Information SI PR O IN SOP16 Outline Dimensions Ver1.1 7 Shanghai Siproin Microelectronics Co.