PNM523T30V01

PNM523T30V01 N-Channel MOSFET Description PNM523T30V01 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） MOSFET Product Summary VDS(V) RDS(on)(Ω) VGS(th)(V) ID(A) 30 7@ VGS=2.5V,ID=10mA 0.5 to 1.5 0.1 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage VDSS ID =10μA,VGS=0V 30 - - V Zero Gate Voltage Drain Current IDSS VDS =30V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VDS =0V,VGS=±20V - - ±1 μA Gate Threshold Voltage VGS(th) VDS =VGS, ID =250μA 0.5 - 1.5 V VGS=2.5V, ID =1mA 6.5 9 Ω VGS=2.5V, ID =10mA 7 9 Ω Static Drain-Source On-Resistance RDS(ON) VGS=4V, ID =10mA - 4 6 Ω VGS=10V, ID =100mA - 3 5 Ω - 0.2 - S 0.75 1 V - - 40 pF - - 10 pF - - 5 pF Forward Transconductance gFS VDS=5V, ID =0.1A Source-Drain Diode Forward Voltage VFSD (V) ID=100mA,VGS=0V DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Rev.06.0 VGS=0V, VDS =25V, f=1MHz 1 www.prisemi.com N-Channel MOSFET PNM523T30V01 Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units 0.5 nC 0.2 nC 0.2 nC SWITCHING PARAMETERS Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-On Fall Time tf VGS=4.5V, VDS =6V, ID =0.1A VDS =30V, VGS =10V, RG=25Ω, RL=150Ω,ID =0.1A - 3 ns - 3.5 ns - 5 ns - 2.5 ns Absolute maximum rating@25℃ Rating Symbol Value Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous ID 0.10 A Pulsed ID 0.36 A TA=25℃ PD 150 mW Drain Current Total Power Dissipation Typical Characteristics 1.0 0.6 0.8 Drain-to-Source Current: ID(A) Drain-to-Source Current: ID(A) VGS=10V 0.6 VGS=4V 0.4 0.2 VDS=5V 0.4 0.2 TJ=125℃ TJ=25℃ VGS=2.5V 0 0 0.0 Rev.06.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 1.0 2.0 3.0 4.0 Drain-to-Source Voltage :VDS (V) Gate-to-Source Voltage :VGS (V) Fig 1. On-Region Characteristics Fig 2. Transfer Characteristics 2 5.0 www.prisemi.com N-Channel MOSFET 5 VGS=4V Gate to Source Voltage :VGS (V) 4 On-Resistance：Rdson (mΩ) PNM523T30V01 10 VGS=10V 3 2 1 0 0 VDS=6V ID =0.1A 8 6 4 2 0 0.2 0.4 0.6 Drain Current: ID(A) 0.8 0 1.0 Fig 3. On-Resistance v.s. Drain Current and Gate Voltage 0.1 0.2 0.3 0.4 Total Gate Charge: Qg (nC) 0.5 0.6 Fig 4. Gate Charge Characteristics 10 1000 TJ=125℃ ID=0.1A 100 On-Resistance: RDSON(mΩ) Capacitance(pF) 8 CISS COSS 10 6 TJ=25℃ 4 2 CRSS 1 1 10 Drain to Source Voltage: VDS(V) 0.1 0 30 6 Fig 5. Capacitance Characteristic 7 10 9 8 Gate-to-Source Voltage: VGS (V) Fig 6. On-Resistance vs. Gate-to-Source Voltage 1.8 VGS=4V ID=10mA 1 Source Current: IS (A) Normalized Drain to Source On-Resistance 10 VGS=2.5V ID=10mA 1.4 1.0 0.6 TJ=125℃ 0.1 TJ=25℃ 0.01 0.001 0 25 50 75 100 125 0 150 Fig 7. Normalized On-Resistance vs. Junction Temperature Rev.06.0 0.2 0.4 0.6 0.8 1.0 1.2 Source-to-Drain Voltage: VSD(V) Junction Temperature: TJ (℃) 3 Fig 8. Body diode forward voltage www.prisemi.com N-Channel MOSFET PNM523T30V01 Product dimension (SOT-523) θ D b2 C (3) A1 E E1 A2 (2) (1) L L1 e b1 A e1 Dim Millimeters MIN MAX MIN MAX A 0.700 0.900 0.028 0.035 A1 0.000 0.100 0.000 0.004 A2 0.700 0.800 0.028 0.031 b1 0.150 0.250 0.006 0.010 b2 0.250 0.350 0.010 0.014 c 0.100 0.200 0.004 0.008 D 1.500 1.700 0.059 0.067 E 0.700 0.900 0.028 0.035 E1 1.450 1.750 0.057 0.069 e e1 0.500TYP 0.900 L Rev.06.0 Inches 0.020TYP 1.100 0.035 0.400REF 0.043 0.016REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 4 www.prisemi.com N-Channel MOSFET PNM523T30V01 Product dimension (SOT-523) a Millimeters Dim b e d b MIN MAX a -- 0.5 b -- 0.6 c -- 1.0 d -- 1.24 e -- 0.4 c Suggested PCB Layout Marking information P5N Ordering information Device Package Reel Shipping PNM523T30V01 SOT-523 (Pb-Free) 7" 3000 / Tape & Reel Rev.06.0 5 www.prisemi.com N-Channel MOSFET PNM523T30V01 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.0 6 www.prisemi.com