SD12T1G

SD12T1G Features Description * 400W peak pulse power (8/20μs) * Protects one data or power line * Ultra low leakage: nA level * Operating voltage: 12V * Ultra low clamping voltage The SD12T1G is designed to replace multilayer varistors in portable applications such as cell phones, notebook computers and PDA’s, using monolithic sili-con technology to provide fast response time and ultra low ESD clamping voltage, * Complies with following standards: making this device an ideal solution for protecting – IEC 61000-4-2 (ESD) immunity test sensitive semiconductor compo-nents from damage. Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (Lightning) 18A (8/20ns) The SD12T1G complies with the IEC 61000-4-2 (ESD) standard with ±15kV air and ±8kV contact discharge. The SD12T1G is assembled into a lead-free SOD-323 package and will protect one unidirectional  RoHS Compliant line. These devices will fit on the same PCB pad area  Package: SOD-323 as an 0805 MLV device.  Lead Finish: Matte Tin Circuit Diagram Marking Diagram 5Y Applications  Cellular Handsets and Accessories  Personal Digital Assistants  Notebooks and Handhelds  Portable Instrumentation  Peripherals  Pagers Peripherals  Desktop and Servers Ordering Information Part Number Packaging Reel Size SD12T1G 3000/Tape & Reel 7 inch Transparent top view 12B:Device Marking Code Ver.: A1 2019-02-22 AW 0571-87006810 www.dowosemi.cn 1／4 SD12T1G Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 400 W Peak Pulse Current (8/20µs) IPP 18 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Symbol Reverse Working Voltage Breakdown Voltage Test Condition Min Typ VRWM VBR IT = 1mA 13.0 14.0 Max Unit 12.0 V 16.0 V 0.5 µA Reverse Leakage Current IR VRWM = 12.0V Clamping Voltage VC IPP = 1A (8 x 20µs pulse) 17 19 V Clamping Voltage VC IPP = 18A (8 x 20µs pulse) 20 25 V Junction Capacitance CJ VR = 0V, f = 1MHz 15 30 pF Portion Electronics Parameter Symbol IT IPP Vc Parameter Test Current Maximum Reverse Peak Pulse Current Clamping Voltage @Ic Ver.: A1 2019-02-22 AW 0571-87006810 www.dowosemi.cn 2／4 SD12T1G Typical Performance Characteristics (TA=25°C unless otherwise Specified) 20 15 10 5 0 28 Vc-Clamping Voltage(V) CJ-Junction Capacitance (pF) 25 0 2 4 6 8 10 24 20 16 12 8 4 0 12 0 2 VR—Reverse Voltage(V) 4 6 8 10 12 14 16 18 20 Ipp-Peak Pulse Current(A) Clamping Voltage vs. Peak Pulse Current Junction Capacitance vs. Reverse Voltage Voltage (V) Peak Power_Ppp(kW) 10 1 0.1 -20 0.1 1.0 10.0 Pulse Duration_tp(uS) 100 100 80 60 40 20 50 75 100 125 150 Ipp-Peak Pulse Current-%of Ipp % of Rated Power 120 25 40 60 80 Ambient Temperature_Ta(℃) 80 60 40 20 0 -20 -20 0 20 40 T-Time(us) 8 X 20us Pulse Waveform Power Derating Curve Ver.: A1 2019-02-22 AW 0571-87006810 100 IEC61000−4−2 Pulse Waveform 120 0 20 Time (nS) Peak Pulse Power vs. Pulse Time 0 0 100.0 www.dowosemi.cn 3／4 60 SD12T1G SOD-323 Package Outline Drawing DIMENSIONS SYM MILLIMETERS INCHES MIN MAX MIN MAX A 1.50 1.80 0.060 0.071 B 1.20 1.40 0.045 0.054 C 2.30 2.70 0.090 0.107 D - 1.10 - 0.043 E 0.30 0.40 0.012 0.016 F 0.10 0.25 0.004 0.010 H - 0.10 - 0.004 Suggested Land Pattern SYM DIMENSIONS MILLIMETERS INCHES A 3.15 0.120 B 0.80 0.031 C 0.80 0.031 Ver.: A1 2019-02-22 AW 0571-87006810 www.dowosemi.cn 4／4