PESD24VS1UB

PESD24VS1UB Features Description * 420W peak pulse power (8/20μs) The PESD24VS1UB is a bi-directional TVS diode, uti-lizing leading monolithic silicon technology to pro-vide fast response time and low ESD clamping volt-age, making this device an ideal solution for pro-tecting voltage sensitive data and power line. The PESD24VS1UB complies with the IEC 61000-4-2 (ESD) standard with ±15 kV air and ±8 kV contact discharge. It is assembled into an ultrasmall SOD-523 lead-free package. The small size and high ESD surge protection make PESD24VS1UB an ideal choice to protect cell phone, digital cameras, audio players and many other portable applications. * Protects one data or power line * Ultra low leakage: nA level * Operating voltage: 24V * Ultra low clamping voltage * Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 9A (8/20ns)  RoHS Compliant  Package: SOD-523  Lead Finish: Matte Tin Applications Circuit Diagram Marking Diagram  Cellular Handsets and Accessories  Personal Digital Assistants  Notebooks and Handhelds  Portable Instrumentation  Peripherals  Pagers Peripherals  Desktop and Servers Ordering Information Part Number 5Y W5B Packaging Reel Size PESD24VS1UB 3000/Tape & Reel 7 inch Transparent top view W5B: Device Marking Code Ver.: A1 2019-02-22 AW 0571-87006810 www.dowosemi.cn 1／4 PESD24VS1UB Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 420 W Peak Pulse Current (8/20µs) IPP 9 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Symbol Reverse Working Voltage Breakdown Voltage Test Condition Min Typ VRWM VBR IT = 1mA 26.0 28.0 Max Unit 24 V 30.5 V Reverse Leakage Current IR VRWM = 24.0V 0.5 µA Clamping Voltage VC IPP = 1A (8 x 20µs pulse) 35 V Clamping Voltage VC IPP = 9A (8 x 20µs pulse) 40 45 V Junction Capacitance CJ VR = 0V, f = 1MHz 30 50 pF Portion Electronics Parameter Symbol IT IPP Vc Parameter Test Current Maximum Reverse Peak Pulse Current Clamping Voltage @Ic Ver.: A1 2019-02-22 AW 0571-87006810 www.dowosemi.cn 2／4 PESD24VS1UB Typical Performance Characteristics (TA=25°C unless otherwise Specified) 60 50 Vc-Clamping Voltage(V) CJ-Junction Capacitance (pF) 45 40 35 30 25 20 15 10 5 0 50 40 30 20 10 0 0 4 8 12 16 20 24 0 2 VR—Reverse Voltage(V) 4 6 8 10 Ipp-Peak Pulse Current(A) Clamping Voltage vs. Peak Pulse Current Junction Capacitance vs. Reverse Voltage 10 Voltage (V) Peak Power_Ppp(kW) 100 1 0.1 -20 0.1 1.0 10.0 Pulse Duration_tp(uS) 100 100 80 60 40 20 50 75 100 125 150 Ipp-Peak Pulse Current-%of Ipp % of Rated Power 120 25 40 60 80 Ambient Temperature_Ta(℃) 80 60 40 20 0 -20 -20 0 20 40 T-Time(us) 8 X 20us Pulse Waveform Power Derating Curve Ver.: A1 2019-02-22 AW 0571-87006810 100 IEC61000−4−2 Pulse Waveform 120 0 20 Time (nS) Peak Pulse Power vs. Pulse Time 0 0 100.0 www.dowosemi.cn 3／4 60 PESD24VS1UB SOD-523 Package Outline Drawing DIMENSIONS DIMN INCHES MM NOTE .MIN MAX MIN MAX A .043 .051 1.10 1.30 — B .028 .035 0.70 0.90 — C .059 .067 1.50 1.70 — D .020 .028 0.50 0.70 — E .010 .014 0.25 0.35 — F .004 .008 0.10 0.20 — G .020 .028 0.50 0.70 — Suggested Land Pattern DIMENSIONS DIMN INCHES MM NOTE MIN MAX MIN MAX C — .067 — 1.70 REF G — .043 — 1.10 — X — .031 — 0.80 REF Y — .024 — 0.60 — Z — .091 -- 2.30 — Ver.: A1 2019-02-22 AW 0571-87006810 www.dowosemi.cn 4／4