PESD5V0S1BA

PESD5V0S1BA Features * 450W peak pulse power (8/20μs) * Protects one data or power line * Ultra low leakage: nA level * Operating voltage: 5V * Ultra low clamping voltage * Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (Lightning) 30A (8/20ns)  RoHS Compliant  Package: SOD-323  Lead Finish: Matte Tin Circuit Diagram Marking Diagram Description The PESD5V0S1BA is designed to replace multilayer varistors in portable applications such as cell phones, notebook computers and PDA’s, using monolithic silicon technology to provide fast response time and ultra low ESD clamping voltage, making this device an ideal solu-tion for protecting sensitive semiconductor components from damage. The PESD5V0S1BA complies with the IEC 61000-4-2 (ESD) standard with ±15kV air and ±8kV contact discharge. The PESD5V0S1BA is assembled into a lead-free SOD-323 package and will protect one unidi-rectional line. These devices will fit on the same PCB pad area as an 0805 MLV device. Applications  Cellular Handsets and Accessories  Personal Digital Assistants  Notebooks and Handhelds  Portable Instrumentation  Peripherals  Pagers Peripherals  Desktop and Servers Ordering Information Part Number 5Y Packaging PESD5V0S1BA 3000/Tape & Reel Reel Size 7 inch Transparent top view 05B:Device Marking Code Ver.: A1 2019-02-22 AW 0571-87006810 www.dowosemi.cn 1／4 PESD5V0S1BA Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 450 W Peak Pulse Current (8/20µs) IPP 30 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Symbol Reverse Working Voltage Breakdown Voltage Test Condition Min Typ VRWM VBR Reverse Leakage Current IR Clamping Voltage VC Clamping Voltage VC Junction Capacitance CJ IT = 1mA(Pin1-Pin2) 6.0 5 V 8.0 V 0.5 µA 9.0 11.0 V 12.0 15.0 V 60 100 pF 7.0 VRWM = 5.0V(Pin2-Pin1) IPP = 10A (8 x 20µs pulse) (Pin1-Pin2) IPP = 30A (8 x 20µs pulse) (Pin1-Pin2) VR = 0V, f = 1MHz (Pin1-Pin2) Max Unit Portion Electronics Parameter Symbol IT Parameter Test Current IPP Vc Maximum Reverse Peak Pulse Current Clamping Voltage @Ic Ver.: A1 2019-02-22 AW 0571-87006810 www.dowosemi.cn 2／4 PESD5V0S1BA Typical Performance Characteristics (TA=25°C unless otherwise Specified) 100 20 Vc-Clamping Voltage(V) CJ-Junction Capacitance (pF) 90 80 70 60 50 40 30 20 10 18 16 14 12 10 8 6 4 2 0 0 0 1 2 3 4 0 5 VR—Reverse Voltage(V) Junction Capacitance vs. Reverse Voltage 5 10 15 20 25 30 Ipp-Peak Pulse Current(A) Clamping Voltage vs. Peak Pulse Current 10 Voltage (V) Peak Power_Ppp(kW) 100 1 -20 0.1 0.1 1.0 10.0 Pulse Duration_tp(uS) 100 100 80 60 40 20 0 75 100 125 150 Ipp-Peak Pulse Current-%of Ipp % of Rated Power 120 50 40 60 80 Ambient Temperature_Ta(℃) 80 60 40 20 0 -20 -20 0 20 40 T-Time(us) 8 X 20us Pulse Waveform Power Derating Curve Ver.: A1 2019-02-22 AW 0571-87006810 100 IEC61000−4−2 Pulse Waveform 120 25 20 Time (nS) Peak Pulse Power vs. Pulse Time 0 0 100.0 www.dowosemi.cn 3／4 60 PESD5V0S1BA SOD-323 Package Outline Drawing DIMENSIONS SYM MILLIMETERS INCHES MIN MAX MIN MAX A 1.50 1.80 0.060 0.071 B 1.20 1.40 0.045 0.054 C 2.30 2.70 0.090 0.107 D - 1.10 - 0.043 E 0.30 0.40 0.012 0.016 F 0.10 0.25 0.004 0.010 H - 0.10 - 0.004 Suggested Land Pattern SYM DIMENSIONS MILLIMETERS INCHES A 3.15 0.120 B 0.80 0.031 C 0.80 0.031 Ver.: A1 2019-02-22 AW 0571-87006810 www.dowosemi.cn 4／4