RCLAMP0502B

RCLAMP0502B 2-Line Ultra Low Capacitance TVS Diode Features Description  Ultra low capacitance: 0.3pF typical (I/O to I/O)  Ultra low leakage: nA level  Low operating voltage: 5V  Low clamping voltage  Up to 2 data lines protects  Package: SOT-523  Complies with following standards: The RCLAMP0502B is an ultra low capacitance TVS array, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high-speed data lines. The RCLAMP0502B has very low capacitance with a typical value at 0.3pF, and complies with the IEC 61000-4-2 (ESD) standard with ±15kV air and ±8kV contact discharge. It is assembled into a 3-pin lead-free SOT-523 package. The combination of small size, low capacitance and high level of ESD protection makes it ideal for HDMI, MDDI, antenna circuits, USB 2.0. – IEC 61000-4-2 (ESD) immunity test Air discharge: ±15kV Contact discharge: ±8kV – IEC61000-4-4 (EFT) 40A (5/50ns) IEC61000-4-5 (Lightning) 4A (8/20μs)  RoHS Compliant Circuit Diagram 1 2 3 Applications  Smart phones  Display Ports  MDDI Ports  USB Ports  Digital Video Interface (DVI)  PCI Express and Serial SATA Ports Marking Diagram Ordering Information 3 Part Number 5B 1 Packaging RCLAMP0502B 3000/Tape & Reel 2 Transparent top view P5:Device Marking Code 1 of 4 Reel Size 7 inch RCLAMP0502B Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 70 W Peak Pulse Current (8/20µs) IPP 4 A ESD per IEC 61000−4−2 (Air) ±20 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±15 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Symbol Reverse Working Voltage Breakdown Voltage Test Condition VBR IR Clamping Voltage VC Clamping Voltage VC Junction Capacitance CJ Junction Capacitance CJ IT = 1mA 6.0 VRWM = 5.0V IPP = 1A (8 x 20µs pulse) IPP = 4.0A (8 x 20µs pulse) VR = 0V, f = 1MHz,pin 1 or pin 2 to pin 3 VR = 0V, f = 1MHz,between pin 1 and pin 2 Portion Electronics Parameter IT IPP Vc Typ VRWM Reverse Leakage Current Symbol Min Parameter Test Current Maximum Reverse Peak Pulse Current Clamping Voltage @Ic 2 of 4 Max Unit 5.0 V 8.5 V 0.5 µA 9 11 V 13 15 V 0.6 1.0 pF 0.3 0.5 pF 7.5 RCLAMP0502B Typical Performance Characteristics (TA=25°C unless otherwise Specified) 20 Vc-Clamping Voltage(V) CJ-Junction Capacitance (pF) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 16 12 8 4 0.1 0 0 0 1 2 3 4 0 5 1 VR—Reverse Voltage(V) 2 3 4 5 Ipp-Peak Pulse Current(A) Clamping Voltage vs. Peak Pulse Current Junction Capacitance vs. Reverse Voltage 1 Voltage (V) Peak Power_Ppp(kW) 10 0.1 0.01 0.1 1 10 -20 100 0 20 120 120 100 100 80 60 40 20 0 50 75 100 125 80 100 IEC61000−4−2 Pulse Waveform Ipp-Peak Pulse Current-%of Ipp % of Rated Power Peak Pulse Power vs. Pulse Time 25 60 Time (nS) Pulse Duration_tp(uS) 0 40 150 80 60 40 20 0 -20 -20 Ambient Temperature_Ta(℃) 0 20 40 T-Time(us) 8 X 20us Pulse Waveform Power Derating Curve 3 of 4 60 RCLAMP0502B SOT-523 Package Outline Drawing Suggested Land Pattern 4 of 4