KBP410

KBP410

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DB-4P_14.5X3.5MM_TM

  • 描述:

    桥式整流器/整流桥 VRM=1000V,IO=4.0A,IFSM=80A,VF=1.1V,IR=5uA

  • 数据手册
  • 价格&库存
KBP410 数据手册
KBP4005 THRU KBP410 Reverse Voltage - 50 to 1000 Volts Forward Current - 4.0 Amperes SINGLE BRIDGE RECTIFIERS Features KBP  Glass Passivated Chip Junction  Low forward voltage drop  High current capability 0.559(14.20) 0.543(13.80)  High surge current capability 0.043(1.1) 0.031(0.8)  The Plastic material-has UL flammability 94V-0 0.126(3.20) 0.118(3.00) 0.417(10.6) 0.402(10.2) ~ - +~ 0.087(2.2) 0.071(1.8) 0.056(1.42) 0.048(1.22) 0.539(13.7) 0.500(12.7) 0.022(0.55) 0.012(0.3) Mechanical Data 0.16(4.06) 0.14(3.56) Case : JEDEC KBP Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.050 ounce, 1.52 grams 0.034(0.86) 0.030(0.76) Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output (With heatsink) (Without heatsink) rectified current at TC=100°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage drop per birdge element at 4.0A Maximum DC reverse current TA=25°C at rated DC blocking voltage TA=125°C I2t Rating for fusing (3ms≤t ≤8.3ms) Typical Junction Capacitance per element (Note 2) Typical Thermal Resistance (Note 2) Operating junction temperature range Storage temperature range SYMBOLS VRRM VRMS VDC MDD MDD MDD MDD MDD MDD MDD KBP4005 KBP401 KBP402 KBP404 KBP406 KBP408 KBP410 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 I(AV) 4.0 UNITS V V V A IFSM 90 A VF 1.1 V IR 10 1 μA mA 35 A2S pF I2t Cj 50 RθJA RθJC RθJL 55 14 20 °C/W TJ -55 to +150 °C TSTG -55 to +150 °C Note:1. Mounted on glass epoxy PC board with 1.3mm 2 solder pad. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. http://www.microdiode.com Rev:2024A3 Page :1 KBP4005 THRU KBP410 Reverse Voltage - 50 to 1000 Volts Forward Current - 4.0 Amperes Ratings And Characteristic Curves Fig. 2 Maximum Non-repetitive Peak Forward Surge Current Fig. 1 Derating Curve for Output Rectified Current Peak Forward Surge Current, Amperes Average Forward Outp ut Current, Amperes 120 4.0 60Hz Resistive of Inductive Load 2.0 0 0 50 100 8.3ms Single half-sine-Wave [JEDEC Method] 90 60 30 0 10 1 100 Number of Cycles at 60HZ 150 o Fig. 4 Typical Reverse Characteristics Case Temperature, C 10 Fig. 3 Typical Instantaneous Forward Characteristics Instantaneous Reverse Current ,Amperes Tc=100 C 100 40 10 4.0 1.0 0.1 TA=25 C .01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage, % 0.1 Tj=25 C Pulse Width=300us 2% duty cycle .01 0.6 0.7 0.8 0.9 1.0 1.1 Instantaneous Forward Voltage, Volts Fig. 5 Typical Junction Capacitance 1.2 400 1.3 Capacitance, pF Instantaneous Forward Current, Amperes 20 1.0 100 10 Tj=25 C f=1.0MHz Ving =50mV p.p. 1 1.5 2 10 100 Reverse Voltage, Volts The curve above is for reference only. http://www.microdiode.com Rev:2024A3 Page :2
KBP410 价格&库存

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KBP410
  •  国内价格
  • 5+0.75607
  • 50+0.60250
  • 100+0.59346
  • 200+0.52577
  • 500+0.46815

库存:1555