ME8320-N
Primary Side Regulation Controller ME8320-N
General Description
Features
Easily to Pass Energy Star EPS6.0
Side
Semi-valley Turn on for Higher Efficiency
power
± 5% Constant Current (CC) and
ME8320-N is a high performance,highly integrated
QR(Quasi
Resonant
Mode)
Regulation(PSR) controller for
and
Primary
offline
small
converter applications. It has high efficiency and low
Voltage (CV) Regulation at Universal AC Input
EMI.ME8320-N can meet EPS level 6 energy standard
Less than 60mW standby power
easily. The IC also has built-in cable drop compensation
Proprietary cable drop compensation
function, which can provide excellent CV performance.
Cycle-by-Cycle current limiting
ME8320-N integrates functions and protections of
Built-in Leading Edge Blanking (LEB)
Under Voltage Lockout (UVLO),VDD Over Voltage
All Pins Floating Protection
Protection(VDD OVP),Output Over Voltage Protection
Built-in Soft Start
(Output OVP),Soft Start,Cycle-by-cycle Current Limiting
Output Over Voltage Protection
(OCP), All Pins Floating Protection, Gate Clamping,
VDD OVP & Clamp
VDD Clamping.
VDD Under Voltage Lockout (UVLO)
Audio Noise Reduction
Available in SOT23-6 package
Typical Application
Package
Battery chargers for cellular phones, cordless
6-pin SOT23-6
phones, PDA, digital cameras, etc
Replaces linear transformer and RCC SMPS
Small power adapter
AC/DC LED lighting
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Constant
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Page 1 of 9
ME8320-N
Typical Application Circuit
T1
D6
Np
C1
Ns
R1
R4
C3
D5
R3
C2
Na
MOS
R2
ME8320-N
Rs
Figure.1 Typical Application of ME8320-N (5V/1A)
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ME8320-N
Selection Guide
ME 83 20 X X G - N
New version
Environment mark
Package
M6:SOT23-6
Version or Function:A
Product Type
Product Series
Microne
product series
product description
ME8320AM6G-N
Package:SOT23-6
Pin Configuration& Pin Assignment
VDD
FB
CC
6
5
4
1
2
3
GND
GATE
CS
SOT23-6
Pin Assignment
Pin Number
Symbol
1
GND
Ground
2
GATE
Totem-pole gate driver output to drive the external MOSFET
3
CS
Current sense
4
CC
Connect a capacitor between this pin and GND for CC regulation
5
FB
6
VDD
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Function
System feedback pin. This control input regulates both the output voltage in CV mode
and output current in CC mode based on the flyback voltage of the auxiliary winding
Power Supply
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ME8320-N
Block Diagram
VDD
Internal
supply
UVLO
Soft gate
drive
OVP
GATE
POR
LEB
A
DEM
Constant
current
regulation
QR/PSR
& logic
CS
GND
Sample
FB
EA
CV
Controller
(on/off)
Vref
CC
Figure.2 Functional Block Diagram of ME8320-N
Absolute Maximum Ratings
Parameter
Ratings
Unit
VDD DC supply Voltage
35
V
VDD DC clamp current
10
mA
GATE pin
20
V
CC, CS Voltage range
-0.3 ~ 7
V
FB Voltage range
-0.7 ~ 7
V
Storage Temperature range
-55~+150
℃
Maximum Junction Temperature
-40~+150
℃
Operating Ambient Temperature range
-40~85
℃
Lead temperature(Soldering, 10sec.)
260
℃
ESD capability, HBM(Human body model)
2
KV
ESD capability, MM(Machine model)
250
V
Thermal resistance
(Junction to air) θJA
SOT23-6
200
℃/W
Continuous Total Power
Dissipation PD
SOT23-6
0.63
W
Caution: The absolute maximum ratings are rated values exceeding which the product could suffer physical damage.
These values must therefore not be exceeded under any conditions.
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ME8320-N
Recommended working condition
Parameter
Min
Typ.
Max
Unit
Power supply voltage, VDD
10
-
30
V
Operating Ambient Temperature
-40
-
85
℃
Maximum switching Frequency
-
120
-
KHz
Electrical Characteristics (Test conditions: VDD=16V, TA=25°C unless otherwise stated)
Item
Testing condition
Min
Typ.
Max
Unit
-
2
20
VFB=1V, CL=0.5nF VDD=20V
-
0.9
1.5
mA
VDD Falling
7.8
8.8
9.8
V
VDD Rising
19.5
20.5
21.5
32
34
36
V
-
39
-
V
1.98
2.0
2.02
V
Minimum OFF time Tmin_off
-
2
-
μS
Maximum OFF time Tmax_off
-
3.2
-
mS
Max cable compensation current Icable_max
-
65
-
μA
-
500
-
nS
-
100
-
nS
0.98
1
1.02
V
Supply Voltage (VDD) Section
VDD=UVLO(ON)-1V Measure
Start up Current ISTART
current into VDD
Operating Current IDD
VDD Under Voltage Lockout Enter (UVLOOFF)
VDD Under Voltage Lockout Exit (Recovery)
(UVLOON)
VDD Over voltage protection trigger( OVP)
VDD Zener clamp voltage (VDD_Clamp)
IVDD=7mA
μA
V
Feedback Input Section(FB Pin)
Internal
Error
amplifier(EA)
reference
input
VFB_EA_Ref
Current Sense (CS pin)
Leading Edge Blanking of CS, LEB
Over Current detection and control delay TD_OC
CL=1nF at GATE
Constant Current Section (CC Pin)
Internal CC reference V_CC_REF
Gate Drive Output
Output low level VOL
Io=20mA(sink)
-
-
1
V
Output high level VOH
Io=20mA(source)
7.5
-
-
V
Output clamp voltage level VG_Clamp
VDD=24V
-
14.5
-
V
Rising Time, TR
CL=0.5nF
-
700
-
nS
Falling Time, TF
CL=0.5nF
-
35
-
nS
-
150
-
°C
Temperature Protection
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ME8320-N
Application Information
ME8320-N is a high performance, multi mode controlled, highly integrated QR (Quasi Resonant) Primary Side
Regulation (PSR) controller. The built-in high precision CV/CC control with high level protection features make it very
suitable for offline small power converter applications.
●Start-up current and start-up control
Start-up current of ME8320-N is designed to be very low (typically 2μA) so that VDD could be charged up above
UVLOON threshold level and device starts up quickly. A large value start-up resistor can therefore be used to
minimize the power loss yet reliable start-up in application.
●Operating current
The operating current in ME8320-N is as small as 1mA (typical). The small operating current results in higher
efficiency and reduces the VDD hold-up capacitance requirement.
●QR/PSR Control
ME8320-N uses a proprietary QR/PSR control for high efficiency and low EMI. The IC works in Quasi-Resonant
(QR) mode in Constant Current (CC) and Constant Voltage (CV) mode. In this way, the efficiency is boosted and the
EMI is reduced greatly. The IC can easily meet EPS level 6 energy standard.
●Constant Current (CC) Regulation
ME8320-N can accurately control the output current by the internal current feedback control loop. The output
mean current in constant current (CC) mode can be approximately expressed as:
ICC (mA) =
N 500(mV)
2 Rcs(Ω)
In the equation above, N----The turn ratio of primary side winding to secondary side winding.
Rcs--- the sensing resistor connected between the MOSFET source to GND.
●Precision CV/CC Performance
In ME8320-N the parameters are trimmed to tight range, which makes the system CC/CV to have less than ±5%
variation.
●Soft Start
ME8320-N features an internal soft start that slowly increases the threshold of cycle-by-cycle current limiting
comparator during start-up sequence. It reduces the stress on the secondary diode during start-up. Every start-up
process is followed by a soft start activation.
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ME8320-N
●Proprietary Cable Voltage Compensation in CV Mode
When it comes to cellular phone charger applications, the battery is located at the end of cable, which causes
typically several percentage of voltage drop on the actual battery voltage. ME8320-N has a proprietary built-in cable
voltage drop compensation block which can provide a constant output voltage at the end of the cable over the entire
load range in CV mode.
●Leading Edge Blanking (LEB)
Each time the power MOSFET is switched on, a turn-on spike occurs across the sensing resistor. To avoid
premature termination of the switching pulse, an internal leading edge blanking circuit is built in. During this blanking
period (500ns, typical), the cycle-by-cycle current limiting comparator is disabled and cannot switch off the gate
driver. Thus, external RC filter with a small time constant is enough for current sensing.
●Minimum and Maximum OFF Time
In ME8320-N, a minimum OFF time (typically 2us) is implemented to suppress ringing when GATE is off. The
minimum OFF time is necessary in applications where the transformer has a large leakage inductance, particularly at
low output voltages or start-up. The maximum OFF time in ME8320-N is typically 3ms, which provides a large range
for frequency reduction. In this way, a low standby power of 100mW can be achieved.
●VDD OVP(Over Voltage Protection)
VDD OVP (Over Voltage Protection) is implemented in ME8320-N and it is a protection of auto-recovery mode.
●Pin Floating Protection
In ME8320-N, if pin floating situation occurs, the IC is designed to have no damage to system.
●Soft Gate Drive
ME8320-N has a soft totem-pole gate driver with optimized EMI performance. An internal 16V clamp is added for
MOSFET gate protection at higher than expected VDD input.
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Page 7 of 9
ME8320-N
Packaging Information
SOT23-6
DIM
Millimeters
Inches
Min
Max
Min
Max
A
1.05
1.45
0.0413
0.0571
A1
0
0.15
0.0000
0.0059
A2
0.9
1.3
0.0354
0.0512
A3
0.55
0.75
0.0217
0.0295
b
0.25
0.5
0.0098
0.0197
c
0.1
0.25
0.0039
0.0098
D
2.7
3.12
0.1063
0.1228
e1
1.9(TYP)
0.0748(TYP)
E
2.6
3.1
0.1024
0.1220
E1
1.4
1.8
0.0551
0.0709
e
0.95(TYP)
0.0374(TYP)
L
0.25
0.6
0.0098
0.0236
θ
0
8°
0.0000
8°
c1
0.2(TYP)
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0.0079(TYP)
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Page 8 of 9
ME8320-N
The contents of this document will be updated with the product's improvement without prior
notice. Please consult our sales staff before using this document to ensure that you are using
The application circuit examples described in this document are only used to indicate the
Please use this product within the limits stated in this document. We will not be responsible for
The products described in this document are not allowed to be used in equipment or devices
that affect the human body without the written permission of our company, including but not
limited to: health equipment, medical equipment, disaster prevention equipment, fuel control
equipment, automobile equipment, a
Although our company has always been committed to improving product quality and reliability,
semiconductor products have a certain probability of malfunction or wrong work. To prevent
personal injury or property damage caused by such accidents, please pay full attention to
safety design, for example: Alternate design, fire protection design, and prevention of wrong
When exporting this product or this document overseas, you should abide by applicable import
Copying or reprinting part or all of this document in any form without the permission of our
company is strictly prohibited.
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