TDM3436A

Techcode® DATASHEET N-Channel Enhancement Mode MOSFET TDM3436A DESCRIPTION The TDM3436A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ⚫ ⚫ ⚫ ⚫ RDS(ON) < 3.2mΩ @ VGS=10V RDS(ON) < 5.3mΩ @ VGS=4.5V High Power and current handling capability Lead free product is available Surface Mount Package Application ⚫ ⚫ ⚫ PWM applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(TJ=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS +20 V ID（TC=25℃） 89 A ID（TC=100℃） 71 A 240 A Avalanche Current IDM（TC=25℃） IAS 54 A Single Pulse Avalanche Energy (Note 3) EAS 145 mJ Maximum Power Dissipation (TA=25℃) (Note 4) PD 22 W Maximum Operating Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55 To 150 ℃ Thermal Resistance Junction-to-Ambient (Note 1) RθJA 55 ℃/W Thermal Resistance Junction-Case (Note 1) RθJC 1.7 ℃/W Drain Current @ Continuous (Note 1) Drain Current @ Current-Pulsed (Note 2) THERMAL CHARACTERISTICS January 25, 2021 Techcode Semiconductor Limited 1 www.techcodesemi.com Techcode® DATASHEET N-Channel Enhancement Mode MOSFET TDM3436A ELECTRICAL CHARACTERISTICS (TJ=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 40 - - V Gate Threshold Voltage VGS(th) VGS=VDS, ID =250μA 1.2 1.7 2.2 V Zero Gate Voltage Drain Current IDSS VDS=40V, VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Drain-Source On-State Resistance (Note2) RDS(ON) VGS=10V, ID=20A - 2.5 3.2 mΩ VGS=4.5V, ID=15A - 3.8 5.3 mΩ VDS=20V,VGS=0V, F=1.0MHz - 2648 - PF OFF CHARACTERISTICS DYNAMIC CHARACTERISTICS Input Capacitance Ciss Output Capacitance Coss - 899 - PF Reverse Transfer Capacitance Crss - S71 - PF - 10 - nS SWITCHING CHARACTERISTICS (Note 3) Turn-on Delay Time td(on) VDS=20V, VGS=10V, RG=3Ω, ID=20A Turn-on Rise Time tr - 5 - nS Turn-Off Delay Time td(off) - 33 - nS Turn-Off Fall Time tf - 6.5 - nS Total Gate Charge Qg - 22.7 - nC Gate-Source Charge Qgs - 7.5 - nC Gate-Drain Charge Qgd - 5.5 - nC VDS=20V, ID=20A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Continuous Source Current (Note 1,5) IS VG=VD=0V, Force Current - - 30 A Diode Forward Voltage (Note 2) VSD VGS=0V,IS=20A - 0.8 1.1 V NOTES: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=54A 4. The power dissipation is limited by junction temperature 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. January 25, 2021 Techcode Semiconductor Limited 2 www.techcodesemi.com Techcode® DATASHEET N-Channel Enhancement Mode MOSFET TDM3436A Typical Operating Characteristics January 25, 2021 Techcode Semiconductor Limited 3 www.techcodesemi.com Techcode® DATASHEET N-Channel Enhancement Mode MOSFET TDM3436A Typical Operating Characteristics (Cont.) January 25, 2021 Techcode Semiconductor Limited 4 www.techcodesemi.com Techcode® DATASHEET N-Channel Enhancement Mode MOSFET TDM3436A Package Information DFN5*6-8 Package January 25, 2021 Techcode Semiconductor Limited 5 www.techcodesemi.com Techcode® DATASHEET N-Channel Enhancement Mode MOSFET TDM3436A Design Notes January 25, 2021 Techcode Semiconductor Limited 6 www.techcodesemi.com