MEM2307XG

MEM2307XG P-Channel MOSFET MEM2307XG General Description Features  MEM2307XG Series P-channel enhancement -30V/-4.1A mode field-effect transistor ,produced with high cell RDS(ON)＜88mΩ@ VGS=-10V,ID=-4.1A density DMOS trench technology, which is especially RDS(ON)＜108mΩ@ VGS=-4.5V,ID=-3A used to minimize on-state resistance. This device  High Density Cell Design For Ultra Low On-Resistance particularly suits low voltage applications, and low  Subminiature surface mount package: SOT23 power dissipation, and low power dissipation in a very small outline surface mount package. Pin Configuration Typical Application  Power management  Load switch  Battery protection Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDSS -30V V Gate-Source Voltage VGSS ±20 V Drain Current TA=25℃ TA=70℃ Pulsed Drain Current1,2 Total Power Dissipation TA=25℃ TA=70℃ ID IDM Pd -4.1 -3.5 -20 1.4 1 A A W Operating Temperature Range TOpr 150 ℃ Storage Temperature Range Tstg -55/150 ℃ V07 www.microne.com.cn Page 1 of 6 MEM2307XG Thermal Characteristics Parameter Symbol TYP. MAX. Unit Thermal Resistance, Junction-to-Ambient t≤10s RθJA 65 90 ℃/W Thermal Resistance, Junction-to-Ambient Steady-State RθJA 85 125 ℃/W Thermal Resistance, Junction-to-Lead Steady-State RθJL 43 60 ℃/W Electrical Characteristics Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -30 Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250uA -1 Gate-Body Leakage IGSS Zero Gate Voltage Drain Current Static Drain-Source On-Resistance V -2 V VDS=0V，VGS=20V 100 nA VDS=0V，VGS=-20V -100 nA IDSS VDS=-24V VGS=0V -1000 nA RDS(ON)1 VGS=-10V,ID=-4.1A 88 mΩ RDS(ON)2 VGS=-4.5V,ID=-3A 108 mΩ VDS = –5 V, ID = –4A Forward Transconductance gFS Maximum Body-Diode Continuous Current Is Source-drain (diode forward) voltage VSD 5.5 VGS=0V,IS=-1A -1.3 8.2 S -2.2 A 0.77 -1.0 V 700 840 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 pF 75 10 15 Ω Switching Characteristics Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall-Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 8.6 VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω 5 28.2 ns 13.5 VDS = -15 V, VGS = -4.5 V, ID = -4A 14.3 3.1 nc 3 1、Repetitive rating, pulse width limited by junction temperature. 2、The static characteristics are obtained using 80 µs pulses, duty cycle 0.5% max. V07 www.microne.com.cn Page 2 of 6 MEM2307XG Typical Performance Characteristics V07 www.microne.com.cn Page 3 of 6 MEM2307XG V07 www.microne.com.cn Page 4 of 6 MEM2307XG Package Information V07 www.microne.com.cn Page 5 of 6 MEM2307XG      V07 The information described herein is subject to change without notice. Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Nanjing Micro One Electronics Inc is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Nanjing Micro One Electronics Inc. Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. www.microne.com.cn Page 6 of 6