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ES3GB

ES3GB

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SMB(DO-214AA)

  • 描述:

    VR=400V IF=3A VF=1.25V IR=5uA trr=35nS

  • 数据手册
  • 价格&库存
ES3GB 数据手册
ES3AB THRU ES3JB Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER Features DO-214AA/SMB  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  For surface mounted applications  Low reverse leakage  Built-in strain relief,ideal for automated  placement High forward surge current capability  High temperature soldering guaranteed: 0.155(3.94) 0.130(3.30) 0.086 (2.20) 0.071 (1.80) 0.185(4.70) 0.160(4.06) 0.012(0.305) 0.006(0.152)  250°C/10 seconds at terminals Glass passivated chip junction 0.096(2.44) 0.084(2.13) 0.060(1.52) 0.030(0.76) Mechanical Data 0.008(0.203)MAX. 0.220(5.59) 0.200(5.08) Case : JEDEC DO-214AA/SMB Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.003 ounce, 0.093 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=55℃ Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current at rated DCblocking voltage Maximum reverse recovery time TA=25℃ TA=125℃ (NOTE 1) VRRM VRMS VDC I(AV) ES3AB ES3BB ES3CB ES3DB ES3EB ES3GB ES3JB MDD ES3AB MDD MDD MDD MDD MDD ES3BB ES3CB ES3DB ES3EB ES3GB MDD ES3JB 50 35 50 100 70 100 150 105 150 IFSM VF IR 200 140 200 300 210 300 400 280 400 600 420 600 UNITS V V V 3.0 A 100 A 0.95 1.25 1.70 V 5.0 100.0 μA trr 35 ns CJ 45.0 pF Typical thermal resistance (NOTE 3) RJA 47.0 ℃/W Operating junction and storage temperature range TJ,TSTG -55 to +150 ℃ Typical junction capacitance (NOTE 2) Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas DN:T20824A0 http://www.microdiode.com Rev:2020A1 Page :1 ES3AB THRU ES3JB Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere FIG. 1- FORWARD CURRENT DERATING CURVE 3.0 2.4 1.8 Single Phase Half Wave 60Hz Resistive or inductive Load 1.2 0.6 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES Ratings And Characteristic Curves FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 80 60 40 20 175 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 1 0.1 ES3AB-ES3DB ES3EB-ES3GB ES3JB 0.01 0 0.4 0.8 1.2 1.6 1.8 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 1,000 100 10 TJ=100 C 1 TJ=25 C 0.1 0.01 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0 20 40 60 80 100 200 100 10 TJ=25 C TRANSIENT THERMAL IMPEDANCE, C/W PERCENTAGE OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 100 NUMBER OF CYCLES AT 60 Hz FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 1 0.1 1.0 10 REVERSE VOLTAGE,VOLTS http://www.microdiode.com 100 t,PULSE DURATION,sec. Rev:2020A1 Page :2 ES3AB THRU ES3JB Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere Packing information P0 P1 unit:mm d E Item F B A Symbol Tolerance SMB A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.81 5.41 2.42 1 5.0 330.00 50.00 13.00 1.75 5.55 8.00 4.00 2.00 0.30 12.00 12.30 W Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width P D2 T D1 C W1 D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE SMB REEL SIZE REEL (pcs) COMPONENT SPACING (mm) 13" 3,000 4.0 INNER BOX (mm) REEL DIA, (mm) CARTON SIZE (mm) CARTON (pcs) 190*190*41 330 365*365*360 48,000 BOX (pcs) 6,000 APPROX. GROSS WEIGHT (kg) 14.0 Suggested Pad Layout Symbol A B C D E Unit (mm) 2.8 2.4 Unit (inch) 0.110 4.6 0.094 0.181 2.2 7.0 0.086 0.276 Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2020A1 Page :3
ES3GB 价格&库存

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ES3GB
  •  国内价格
  • 1+0.20850
  • 100+0.19460
  • 300+0.18070
  • 500+0.16680
  • 2000+0.15985
  • 5000+0.15568

库存:2480

ES3GB
  •  国内价格
  • 18000+0.13200

库存:0

ES3GB

库存:0