SI2300

SI2300 6273ODVWLF(QFDSVXODWH026)(76 1&KDQQHO9'6026)(7 SI2301  Features VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A Equivalent Circuit MARKING 2300 3400 R 3400 1.GATE 2.SOURCE 3.DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS Drain-Current -Continuous * TJ=125 -Pulsed Power Dissipation * Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range V 3.8 IDM 15 A A W PD 1.25 RthJA 100 Tj.Tstg -55 to 150 * Surface Mounted on FR 4 Board ,t 10 sec. www.tw-gmc.com 10 ID 1 /W SI2300 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage VDSS VGS=0V,ID=250uA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 uA Gate-Body Leakage IGSS VGS= 100 nA Gate Threshold Voltage * VGS(th) Drain- Source on-state Resistance * 20 10V,VDS=0V 0.78 1.5 VGS=4.5V,ID=5.0A VGS=VDS,ID=250uA 0.6 32 40 m RDS(ON) VGS=2.5V,ID=4.0A 50 60 m 62 75 m VGS=1.8V,ID=1.0A On-State Drain Current * ID(ON) Forward Transconductance * V gFS VDS=5V,VGS=4.5V 18 VDS=5V,ID=5A 5 V A S Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 115 pF Turn-On Delay Time tD(on) 31.8 ns 14.5 ns Rise Time tr Turn-Off Delay Time tD(off) Fall Time Total Gate Charge ns ns Qg 16.8 nC 2.5 nC 5.4 nC Qgs www.tw-gmc.com pF 31.9 Qgd * Pulse Test:Pulse Width 300 144 50.3 Gate-S ource Charge Diode Forward Voltage VDD=10V,ID=1A,VGS=4.5V,RL=10 ,RGEN=6 pF tf Gate-Drain Charge Drain-Source Diode Forward Current * VDS = 15V, VGS = 0V,f =1.0MHZ 888 VDS = 10V, ID = 3.5A,VGS = 4.5V IS VSD VGS=0V,IS=1.25A ,Duty Cycle 2% 1 2 0.825 1.25 A 1.2 V SI2300 www.tw-gmc.com 1 3 SI2300 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 1 4 2