RB520S-30

  RB520S-30 PINNING Silicon Epitaxial Planar Schottky Barrier Diode DESCRIPTION PIN for low current rectification and high speed switching applications 1 Cathode 2 Anode   1       Features • Extremely small surface mounting type • High reliability 2     B   Top View Marking Code: "B" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VR 30 V Mean Rectifying Current IF(AV) 200 mA Peak Forward Surge Current (60 Hz for 1 Cyc.) IFSM 1 A Tj 125 O Tstg - 40 to + 125 O Symbol Max. Reverse Voltage Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 200 mA VF 0.6 Reverse Current at VR = 10 V IR 1 V   Note: ESD sensitive product handling required. www.tw-gmc.com Unit   1 µA   RB520S-30     www.tw-gmc.com 2   RB520S-30   PACKAGE OUTLINE SOD-523 Plastic surface mounted package; 2 leads           ∠                     ALL ROUND         A       C                 HE   D   www.tw-gmc.com                           UNIT mm     bp   E                             A     A 0.70 0.60 bp 0.4 0.3 C 0.135 0.100 D 1.25 1.15 3 E 0.85 0.75 HE 1.7 1.5 ∠ V   0.1 5 O