NTR2101P

NTR2101P P-Channel Enhancement Mode MOSFET Feature  -18V/-3A, R DS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V.  Super High dense cell design for extremely low RDS(ON)  Reliable and Rugged  SOT-23 for Surface Mount Package Applications  SOT-23 Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=25℃ Unless Otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -18 V Gate-Source Voltage VGS ±10 V ID -3 A Drain Current-Continuous Electrical Characteristics Parameter TA=25℃ Unless Otherwise noted Symbol Test Conditions Min Typ. Max Units BVDSS VGS=0V, ID=-250μA -18 - - V Zero-Gate Voltage Drain Current IDSS VDS=-18V, VGS=0V - - -1 μA Gate Body Leakage Current, Forward IGSSF VGS=10V, VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-10V, VDS=0V - - -100 nA VGS(th) VGS= VDS, ID=-250µA -0.4 - -1.0 V RDS(ON) VGS =-4.5V, ID =-3.0A - -- 120 mΩ VGS =-2.5V, ID =-2.0A - -- 150 mΩ -1.2 V Off Characteristics Drain to Source Breakdown Voltage On Characteristics Gate Threshold Voltage Static Drain-source On-Resistance Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage REV.08 VSD VGS =0V, IS=-1.25A 1 of 4 NTR2101P Typical Characteristics 12 VGS=3，3.5，4V，4.5V 14 10 -ID,Drain Current (A) -ID,Drain Current(A) 12 10 VGS=2.5V 8 6 4 8 6 Tj＝150℃ 4 Tj＝25℃ 2 2 VGS=2.0V 0 0 0 1 2 3 4 5 0 1 -VDS,Drain-Source Voltage(V) 4 Figure 2．Transfer Characteristics 1.3 23.2 ID=250uA -Vth,Nomalized Gate-Source Threshold Voltage(V) -BVDSS,Normalized Drain-Source Breakdown Voltage(V) 3 -VGS,Gate-to-Source Voltage (V) Figure 1．Output Characteristics 23 22.8 22.6 22.4 22.2 ID=250uA 1.2 1.1 1 0.9 0.8 22 0 50 100 0 150 Figure 3．Breakdown Voltage Variation with Temperature 50 100 Tj,Junction Temperature(℃) Tj,Junction Temperature(℃) REV.08 2 Figure 4．Gate Threshold Variation with Temperature 2 of 4 150 NTR2101P Typical Characteristics 0.125 0.35 0.3 0.12 RDS(on)-On Resistance(Ω) Rds(on),Normalized OnResistance(Ω) -3.0V/-2.0A 0.115 0.11 0.105 0.25 VGS=-2.5V 0.2 0.15 VGS=-4.5V 0.1 0.05 0.1 0 50 100 0 150 0 Tj,Junction Temperature(℃) Figure 5．On-Resistance Variation with Temperature 5 10 15 - ID-Drain Current(A) 20 Figure 6．On-Resistance vs. Drain Current 0.3 100 -IS,Source-Drain Current(A) RDS(on),On-Resistance (Ω) ID=-3A 0.25 0.2 ID=-2A 0.15 0.1 0.05 0 Tj＝150℃ Tj＝25℃ 1 0.1 1 2 3 4 5 - VGS,Gate-to-Source Voltage (V) 1 2 3 4 5 -VSD,Body Diode Forward Voltage(V) Figure 7 ． On-Resistance vs. Gate-to-Source Voltage Voltage REV.08 10 3 of 4 Figure 8 ． Source-Drain Diode Forward NTR2101P Package Outline Dimensions (UNIT: mm) REV.08 4 of 4 SOT-23