PXT2222A

PXT2222A SOT-89-3 L Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 -3 L FEATURES z Epitaxial planar die construction z Complementary PNP Type available(PXT2907A) 1. BASE MARKING: 1P 3. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO IC Emitter-Base Voltage Collector Current -Continuous 6 800 V mA PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 ~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10μ A,IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0. 01 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0. 01 μA hFE(1) VCE=10V, IC= 0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 hFE(4) VCE=10V, IC= 150mA 100 hFE(5) VCE=1V, IC= 150mA 50 40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 hFE(6) VCE=10V, IC= 500mA VCE(sat) IC=500mA, IB= 50mA 1 V VCE(sat) IC=150mA, IB=15mA 0.3 V VBE(sat) IC=500mA, IB=50mA 2.0 V VBE(sat) IC=150mA, IB=15mA 0.6 1.2 V VCE=10V, IC=20mA f=100MHz 300 MHz Transition frequency fT Output Capacitance Cob VCB=10V, IE= 0,f=1MHz 8 pF td VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA 10 ns Delay time Rise time tr Storage time tS Fall time tf REV.08 VCC=30V, IC=150mA IB1=- IB2= 15mA 1 of 3 25 ns 225 ns 60 ns PXT2222A Static Characteristic COLLECTOR CURRENT 700uA 0.15 600uA 500uA 0.10 400uA COMMON EMITTER VCE= 10V IB= 100uA 2 4 6 8 10 12 VCEsat —— 100 14 10 16 1 IC Ta=25℃ β=10 10 10 IC IC —— 800 (mA) IC 900 Ta=25℃ 600 Ta=100 ℃ β=10 1 10 COLLECTOR CURREMT (mA) VBE fT 500 800 100 —— IC (mA) IC (MHz) 600 IC 300 800 100 COLLECTOR CURREMT 100 VBEsat —— 1200 Ta=100 ℃ 1 10 COLLECTOR CURRENT VCE (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25℃ 100 200uA 1000 100 TRANSITION FREQUENCY 10 T =2 5℃ a T= a 10 0℃ fT IC COLLECTOR CURRENT Ta=100℃ 300uA 0.05 COLLECTOR-EMITTER VOLTAGE (mA) DC CURRENT GAIN 800uA 0 1 COMMON EMITTER VCE= 10V 100 COMMON EMITTER VCE=10V Ta=25℃ 0.1 10 0 300 600 900 1200 1 10 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) (pF) Ta=25 ℃ C Cib 10 Cob 1 REVERSE VOLTAGE 10 V PC 600 f=1MHz IE=0/IC=0 1 0.1 100 COLLECTOR CURRENT BESE-EMMITER VOLTAGE VBE (mV) CAPACITANCE IC 900uA 0.00 REV.08 —— 1mA hFE 0.20 hFE 1000 COMMON EMITTER Ta=25℃ IC (A) 0.25 20 (V) —— (mA) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 2 of 3 IC 125 100 Ta (℃ ) 150 PXT2222A SOT-89-3L Package Outline Dimensions Symbol A b b1 c D D1 E E1 e e1 L SOT-89-3L Suggested Pad Layout REV.08 3 of 3 Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047