NTR4501N

NTR4501N N-Channel Enhancement Mode MOSFET Feature 18V/3.5A, R DS(ON) = 80mΩ(MAX) @VGS = 4.5V. RDS(ON) = 90mΩ(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Applications ● SOT-23 Power Management Portable Equipment and Battery Powered Systems. Absolute MaximumRatings TA=25℃ Unless Otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 18 V Gate-Source Voltage VGS ±8 V ID 3. 5 A Drain Current-Continuous Electrical Characteristics Parameter TA=25℃ Unless Otherwise noted Symbol Test Conditions Min Typ. Max Units BVDSS VGS=0V, ID=250µA 18 - - V Zero-Gate Voltage Drain Current IDSS VDS=12V, VGS=0V - - 1 µA Gate Body Leakage Current, Forward IGSSF VGS=8V, VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-8V, VDS=0V - - -100 nA VGS(th) VGS= VDS, ID=250µA 0.4 - 1.3 V VGS =4.5V, ID =3.5A - 70 80 mΩ VGS =2.5V, ID =3.1A - 75 90 mΩ 1.2 V Off Characteristics Drain to Source Breakdown Voltage On Characteristics Gate Threshold Voltage Static Drain-source RDS(ON) On-Resistance Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage REV.08 VSD VGS =0V, IS=0.94A 1 of 4 NTR4501N Typical Characteristics 16 14 ID,Drain Current(Amps) ID,Drain Current(Amps) 10 8 6 4 VDS=1.5V 14 VGS=2.5，3，3.5，4，4.5，5，6，7V 12 VGS=2.0V 12 10 8 Tj＝125℃ 6 4 Tj＝25℃ 2 2 0 0 0 1 2 3 4 0 5 Figure 1．Output Characteristics 1.5 2 2.5 3 1 0.9 ID=250uA VGS,Gate-to-Source Voltage(Volts) BVDSS,Normalized Drain-Source Breakdown Voltage(Volts) 1 Figure 2．Transfer Characteristics 25 24.5 24 23.5 23 22.5 ID=250uA 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 22 0 0 50 100 150 200 0 50 100 150 Tj.Junction Temperature(℃) Tj.Junction Temperature(℃) Figure 3．Breakdown Voltage Variation with Temperature REV.08 0.5 VGS,Gate-to-Source Voltage(Volts) VDS,Drain-to-Source Voltage(Volts) Figure 4．Gate Threshold Variation with Temperature 2 of 4 200 NTR4501N Typical Characteristics 0.12 0.1 0.1 0.08 2.5V/3.1A RDS(on)-On Resistance(Ω) RDS(on),Normalized On-Resistance(Ω) 0.09 0.07 0.06 4.5V/3.5A 0.05 0.04 0.03 0.02 0.08 VGS=2.5V 0.06 VGS=4.5V 0.04 0.02 0.01 0 0 0 50 100 150 0 200 5 10 15 ID-Drain Current(A) Tj.Junction Temperature(℃) Figure 5．On-Resistance Variation with Temperature Figure 6．On-Resistance vs. Drain Current 100 0.2 0.18 ID=3.5A 0.14 IS-Source Current(A) RDS(on)-On Resistance(Ω) 0.16 0.12 0.1 0.08 0.06 10 Tj＝150℃ 1 Tj＝25℃ ID=3.1A 0.04 0.02 0 0.1 0 2 4 6 8 10 Figure 7．On-Resistance vs. Gate-to-Source Voltage REV.08 0 0.5 1 1.5 2 VSD-Source-to-Drain Voltage(V) VGS,Gate-to-Source Voltage(Volts) 3 of 4 Figure 8．Source-Drain Diode Forward Voltage NTR4501N Package Outline Dimensions REV.08 (UNIT: mm) 4 of 4 SOT-23