FL8205
N-Channel Enhancement Mode Power MOSFET
Description
D1
D2
The FL8205 uses advanced trench technology to provide
G2
G1
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
S2
S1
Schematic diagram
General Features
● V DS = 20V,ID = 6A
RDS(ON) < 35mΩ @ VGS=2.5V
RDS(ON)
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免费人工找货- 国内价格
- 1+0.21725
- 100+0.20277
- 300+0.18829
- 500+0.17380
- 2000+0.16656
- 5000+0.16221
- 国内价格
- 10+0.32288
- 100+0.26348
- 300+0.23373
- 3000+0.21146
- 6000+0.19362
- 9000+0.18468
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