2SC3357

2SC3357 NPN Silicon RF Transistor FEATURES · Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz APPLICATIONS SOT-89 · Designed for low noise amplifier at VHF, UHF and CATV band. MECHANICAL DATA     Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3.0 V IC 100 mA W Parameter Collector current Total power dissipation PT* 1.2 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Thermal Resistance Rth(j-a)* 62.5 /W * mounted on 16 cm X 0.7 mm(t) Ceramic Substrate 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Collector cutoff current ICBO Emitter cutoff current Test conditions Min Typ VCB = 10V,IE=0 IEBO VEB = 1.0V,IC=0 1.0 A 1.0 A hFE *1 VCE =10V,Ic=20mA Insertion Power Gain |S21e |2 VCE = 10 V, IC = 20 mA, f = 1.0 GHz 9 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz 1.1 dB VCE = 10 V, IC = 40 mA, f = 1.0 GHz 1.8 3.0 dB VCB = 10 V, IE = 0, f = 1.0 MHz 0.65 1.0 pF VCE = 10V ,Ic=20mA 6.5 NF Output Capacitance Cob Transition frequency fT *1 Pulse Measurement PW 350 ms, Duty Cycle 120 Unit DC current gain Noise Figure 50 Max 250 GHz 2% *2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. CLASSIFICATION OF hFE Marking RH RF RE Rank RH RF RE hFE 20 100 80 160 125 250 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 1/ 6 2SC3357 NPN Silicon RF Transistor Typical Characteristics © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 2/ 6 2SC3357 NPN Silicon RF Transistor S-PARAMETER VCE = 10 V, IC = 40 mA, ZO = 50Ω f (MHz) ︱S11︱ ∠S11 ︱S21︱ ∠S21 ︱S12︱ ∠S12 ︱S22︱ ∠S22 200 0.196 -94.4 13.023 102.4 0.043 74.5 0.444 -21.1 400 0.103 -118.3 6.852 89.2 0.081 77.4 0.398 -25.3 600 0.056 -131.1 4.632 78.3 0.118 77.5 0.399 -26.9 800 0.024 -43.7 3.527 75.9 0.152 78.0 0.414 -28.9 1000 0.008 -2.0 2.854 68.7 0.188 78.4 0.440 -33.5 1200 0.039 13.1 2.421 65.7 0.218 75.7 0.461 -33.3 1400 0.072 11.8 2.118 59.0 0.255 71.7 0.479 -36.3 1600 0.102 9.6 1.887 57.1 0.278 73.1 0.499 -35.5 1800 0.129 8.6 1.681 52.5 0.308 71.3 0.515 -38.8 2000 0.151 9.8 1.579 51.4 0.339 71.8 0.537 -35.9 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 3/ 6 2SC3357 NPN Silicon RF Transistor VCE = 10 V, IC = 20 mA, ZO = 50Ω f (MHz) ︱S11︱ ∠S11 ︱S21︱ ∠S21 ︱S12︱ ∠S12 ︱S22︱ ∠S22 200 0.130 -109.2 13.430 98.1 0.042 79.0 0.403 -22.1 400 600 0.073 0.037 -134.1 -146.6 6.930 4.690 87.2 79.4 0.081 0.119 80.6 79.4 0.382 0.392 -24.7 -25.6 800 1000 1200 1400 1600 1800 2000 0.010 0.024 0.056 0.093 0.124 0.151 0.174 177.1 23.7 17.2 13.8 12.0 11.0 13.4 3.560 2.878 2.439 2.133 1.898 1.693 1.591 75.2 68.2 65.4 59.0 57.3 52.9 52.0 0.154 0.191 0.220 0.257 0.280 0.311 0.341 79.7 76.5 76.8 72.9 74.0 72.4 72.8 0.412 0.440 0.463 0.483 0.504 0.519 0.542 -27.1 -31.9 -32.3 -35.7 -35.3 -38.4 -36.3 S-P ARAMETER S11e, S22e-FREQUENCY S21e-FREQUENCY CONDITION VCE = 10 V CONDITION VCE = 10 V S12e-FREQUENCY IC = 20 mA © SHENZHEN HOTTECH ELECTRONICS CO.,LTD CONDITION VCE = 10 V IC = 20 mA E-mail:hkt@heketai.com 4/ 6 2SC3357 NPN Silicon RF Transistor SOT-89 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.550REF 0.061REF E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e 1.500TYP 0.060TYP e1 3.000TYP 0.118TYP L 0.900 1.200 0.035 0.047 SOT-89 Suggested Pad Layout Note: 1. Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 5/ 6 2SC3357 NPN Silicon RF Transistor SOT-89 Tape and Reel SOT-89 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-89 4.85 4.45 1.85 Ø1.50 1.75 5.50 4.00 8.00 2.00 12.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-89 Tape Leader and Trailer SOT-89 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 13.20 16.50 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 6/ 6