C945

C945 BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to A733  Excellent hFE Linearity  Low Noise  Surface Mount device SOT-23 MECHANICAL DATA     Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current ICER Emitter cut-off current IEBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure VCE(sat) VBE(sat) fT Cob 130 40 0.1 uA 0.1 400 uA 0.3 1 3.0 V V MHz pF 10 dB 150 NF CLASSIFICATION OF hFE Value 60 50 5 150 200 625 150 -55 ~+150 4 VCE=55V, R=10MΩ VEB=5V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=0.1mA IC=100mA，IB=10mA IC=100mA，IB=10mA VCE=6V, IC=10mA, f=30MHz VCE=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA,Rg=10kΩ f=1KMHz Rank L H Range 130-200 200-400 Marking © SHENZHEN HOTTECH ELECTRONICS CO.,LTD Unit V V V mA mW °C/W °C °C (TA = 25°C unless otherwise specified) Symbol Min Typ Max Unit Conditions V(BR)CBO IC=100uA，IE=0 60 V V(BR)CEO V IC=1mA，IB=0 50 V(BR)EBO IE=100uA，IC=0 5 V ICBO 0.1 uA VCB=60V, IE=0 Collector cut-off current DC current gain Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG CR E-mail:hkt@heketai.com 1/4 C945 BIPOLAR TRANSISTOR (NPN) Typical Characteristics Static Characteristic (mA) IC 27uA 24uA Ta=25℃ 300 DC CURRENT GAIN COLLECTOR CURRENT 8 21uA 18uA 6 IC Ta=100℃ COMMON EMITTER Ta=25℃ 30uA 10 hFE —— 1000 hFE 12 15uA 12uA 4 100 9uA 30 6uA 2 VCE=6V IB=3uA 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE 10 0.7 12 IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 100 Ta=100℃ Ta=25℃ 30 β=10 10 3 COLLECTOR CURRENT Cob / Cib 15 100 30 IC COLLECTOR POWER DISSIPATION PC (W) (pF) C CAPACITANCE 600 Ta=100℃ 400 β=10 0.3 1 10 3 PC 0.25 Ta=25℃ 10 Cib 5 Cob 0 0.1 IC COLLECTOR CURRENT f=1MHz IE=0 /IC=0 150 Ta=25℃ (mA) VCB / VEB —— 100 (mA) 800 200 0.1 150 IC VBEsat —— 1000 10 30 10 COLLECTOR CURRENT 300 1 3 1 (V) —— 100 150 30 IC (mA) Ta 0.20 0.15 0.10 0.05 0.00 0.3 1 REVERSE BIAS VOLTAGE © SHENZHEN HOTTECH ELECTRONICS CO.,LTD 10 3 V (V) 0 25 50 75 AMBIENT TEMPERATURE E-mail:hkt@heketai.com 100 Ta 125 150 (℃ ) 2/4 C945 BIPOLAR TRANSISTOR (NPN) SOT-23 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 RE F 0.079 0.022 REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 3/4 C945 BIPOLAR TRANSISTOR (NPN) SOT-23 Tape and Reel SOT-23 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-23 3.15 2.77 1.22 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-23 Tape Leader and Trailer SOT-23 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 4/4