2SC3356

2SC3356 BIPOLAR TRANSISTOR (NPN) FEATURES  High power gain  Low Noise  For Low Noise Amplifier at UHF/VHF/CATV Band  Surface Mount device SOT-323 MECHANICAL DATA     Case: SOT-323 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3 V Collector Current Collector Power Dissipation IC 100 mA PC 200 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Conditions Collector-base breakdown voltage V(BR)CBO 20 V IC=10uA，IE=0 Collector-emitter breakdown voltage V(BR)CEO 12 V IC=1mA，IB=0 Emitter-base breakdown voltage V(BR)EBO 3 V IE=10uA，IC=0 Collector cut-off current ICBO 1 uA VCB=10V, IE=0 Emitter cut-off current IEBO 1 uA VEB=1V, IC=0 DC current gain hFE 50 120 VCE=10V, IC=20mA 300 VCE=10V, IC=20mA, f=1GHz Insertion Power Gain |S21e|2 11.5 dB Transition frequency fT 7 GHz Collector output capacitance Cob 0.55 1.0 pF VCB=10V, IE=0, f=1MHz Noise figure NF 1 2 dB VCE=10V, IC=7mA, f=1GHz VCE=10V, IC=20mA CLASSIFICATION OF hFE Rank Q R S T Range 50-100 80-160 125-250 200-330 Marking R23 R24 R25 R26 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 1/4 2SC3356 BIPOLAR TRANSISTOR (NPN) Typical Characteristics Free Air FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2 f = 1.0 MHz Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 50 100 TA-Ambient Temperature-°C 0 1 0.5 0.3 0 150 5 10 20 30 |S21e|2-Insertion Gain-dB 50 20 10 5 VCE = 10 V f = 1.0 GHz 1 5 10 0 0.5 50 1 5 IC-Collector Current-mA 10 50 70 IC-Collector Current-mA INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 Gmax 5.0 Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB fT-Gain Bandwidth Product-MHz 2 INSERTION GAIN vs. COLLECTOR CURRENT 15 100 10 0.5 3.0 2.0 1.0 0.5 0.3 20 |S21e|2 10 0.2 VCE = 10 V 0.1 0 0.5 1.0 5.0 10 0 30 VCE = 10 V IC = 20 mA 0.1 IC-Collector Current-mA 18 VCE = 10 V f = 1.0 GHz |S21e|2-Insertion Gain-dB 6 5 4 3 2 15 12 6 3 NF-Noise Figure-dB 7 0.2 0.4 0.6 0.81.0 2 f-Frequency-GHz NOISE FIGURE vs. COLLECTOR CURRENT NF-Noise Figure-dB 1 VCB-Collector to Base Voltage-V DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V hFE-DC Current Gain 0.5 NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE 5 f = 1.0 GHz IC = 20 mA 4 2 |S21e| 3 2 NF 1 1 0 0.5 1 5 10 IC-Collector Current-mA © SHENZHEN HOTTECH ELECTRONICS CO.,LTD 50 70 0 0 2 4 6 8 10 VCE-Collector to Emitter Voltage-V E-mail:hkt@heketai.com 2/4 2SC3356 BIPOLAR TRANSISTOR (NPN) SOT-323 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 0.650TYP 1.200 L 0.026TYP 1.400 0.047 0.525REF 0.055 0.021REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° SOT-323 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 3/4 2SC3356 BIPOLAR TRANSISTOR (NPN) SOT-323 Tape and Reel SOT-323 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-323 2.25 2.55 1.19 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-323 Tape Leader and Trailer SOT-323 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 4/4