A733

A733 BIPOLAR TRANSISTOR (PNP) FEATURES  Complementary to 2SC945  Excellent hFE Linearity  Low Noise  Surface Mount device SOT-323 MECHANICAL DATA     Case: SOT-323 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -50 -5 -150 200 625 150 -55 ~+150 Unit V V V mA mW °C/W °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min V(BR)CBO -60 V IC= -5uA，IE=0 Collector-emitter breakdown voltage V(BR)CEO -50 V IC= -1mA，IB=0 Emitter-base breakdown voltage -5 V IE= -50uA，IC=0 Collector-base breakdown voltage V(BR)EBO Typ Max Unit Conditions Collector cut-off current ICBO -0.1 uA VCB= -60V, IE=0 Emitter cut-off current IEBO hFE -0.1 475 uA VEB= -5V, IC=0 VCE= -6V, IC= -1mA -0.18 -0.3 V IC= -100mA，IB= -10mA -0.62 -0.68 V IC= -1mA，VCE= -6V MHz VCE= -6V, IC= -10mA DC current gain 120 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(ON) -0.58 fT 50 Transition frequency Collector output capacitance Cob 4.5 7 pF VCE= -10V, IE=0, f=1MHz Noise figure NF 6 20 dB VCE= -6V, IC= -0.3mA, Rg=10kΩ, f=100Hz CLASSIFICATION OF hFE Rank L H Range 120-220 220-475 Marking © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 1/4 A733 BIPOLAR TRANSISTOR (PNP) Typical Characteristics Static Characteristic -20uA -3 hFE 300 -18uA -16uA -14uA -2 -12uA -10uA -8uA -6uA -1 —— IC COMMON EMITTER VCE=-6V COMMON EMITTER Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) -4 Ta=100℃ 200 Ta=25℃ 100 -4uA IB=-2uA 0 -0.1 -0 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat -500 —— VCE -10 -3 -1 -0.3 -10 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -150 -30 IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -300 -100 Ta=100℃ Ta=25℃ -30 -0.8 Ta=25℃ Ta=100℃ -0.4 β=10 β=10 -10 -0.3 -3 -1 -30 -10 COLLECTOR CURRENT IC -150 (mA) -10 VBE Cob/ Cib 20 —— IC (mA) VCB/ VEB f=1MHz IE=0/IC=0 CAPACITANCE C (pF) Ta=100℃ -3 Ta=25℃ -1 Ta=25℃ Cib 10 -10 -100 -150 -30 COLLECTOR CURRENT -30 Cob 3 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 1 -0.1 -1.0 fT 300 —— -1 -0.3 IC PC 250 -10 -3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— V -20 (V) Ta VCE=-6V Ta=25℃ COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) -3 -1 -0.5 COMMON EMITTER VCE=-6V -100 COLLECTOR CURRENT IC (mA) —— IC -0.0 -0.2 -100 -150 200 100 -1 -3 -30 -10 COLLECTOR CURRENT IC © SHENZHEN HOTTECH ELECTRONICS CO.,LTD (mA) 200 150 100 50 0 -100 0 25 50 75 AMBIENT TEMPERATURE E-mail:hkt@heketai.com 100 Ta 125 150 (℃ ) 2/4 A733 BIPOLAR TRANSISTOR (PNP) SOT-323 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 0.650TYP 1.200 L 0.026TYP 1.400 0.047 0.525REF 0.055 0.021REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° SOT-323 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 3/4 A733 BIPOLAR TRANSISTOR (PNP) SOT-323 Tape and Reel SOT-323 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-323 2.25 2.55 1.19 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-323 Tape Leader and Trailer SOT-323 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 4/4