B772

B772 BIPOLAR TRANSISTOR (PNP) FEATURES  Complementary to D882  Low Speed Switching  Surface Mount device SOT-89 MECHANICAL DATA     Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V Collector Current Collector Power Dissipation IC -3 A PC 500 mW Thermal Resistance From Junction To Ambient RθJA 250 °C/W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min V(BR)CBO -40 V IC=-100uA，IE=0 Collector-emitter breakdown voltage V(BR)CEO -30 V IC=-10mA，IB=0 Emitter-base breakdown voltage -6 V IE=-100uA，IC=0 Collector-base breakdown voltage V(BR)EBO Typ Max Unit Conditions Collector cut-off current ICBO -1 uA VCB=-40V, IE=0 Collector cut-off current ICEO -10 uA VCE=-30V, IB=0 Emitter cut-off current IEBO -1 uA VEB=-6V, IC=0 DC current gain hFE 60 VCE=-2V, IC=-1A 400 Collector-emitter saturation voltage VCE(sat) -0.5 V IC=-2A，IB=-0.2A Base-emitter saturation voltage VBE(sat) -1.5 V IC=-2A，IB=-0.2A Transition frequency CLASSIFICATION OF hFE Rank Range Marking © SHENZHEN HOTTECH ELECTRONICS CO.,LTD fT R 60-120 50 VCE=-5V,IC=-0.1A,f=10MHz MHz O 100-200 Y 160-320 GR 200-400 B772 E-mail:hkt@heketai.com 1/4 B772 BIPOLAR TRANSISTOR (PNP) Typical Characteristics Static Characteristic -1.8 -1.6 —— IC COMMON EMITTER VCE= -2V -6.75mA -5.25mA -1.2 -4.5mA -1.0 -3.75mA -3.0mA -0.8 -2.25mA -0.6 -1.5mA -0.4 -0.2 DC CURRENT GAIN hFE -6.0mA -1.4 COLLECTOR CURRENT IC (A) hFE 10000 -7.5mA COMMON EMITTER Ta=25℃ 1000 Ta=100℃ Ta=25℃ 100 IB=-0.75mA -0.0 -0.0 10 -0.5 -1.0 -1.5 -2.0 -2.5 COLLECTOR-EMITTER VOLTAGE VCEsat -1000 —— -3.0 -3.5 -1 -10 -100 COLLECTOR CURRENT VCE (V) VBEsat IC —— IC -1000 -3000 -1000 -3000 (mA) IC -1500 β=10 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1200 -100 Ta=100 ℃ Ta=25℃ -10 -1 -1 -10 -100 COLLECTOR CURRENT IC -3000 IC -600 Ta=25℃ Ta=100 ℃ -300 -3000 -1 (mA) -10 -100 COLLECTOR CURREMT VBE fT 200 —— IC (mA) IC -10 T= a 25 ℃ T a =1 00 ℃ -100 TRANSITION FREQUENCY fT (MHz) COMMON EMITTER VCE= -2V -1000 COLLECTOR CURRENT IC (mA) —— -1000 -900 -1 100 COMMON EMITTER VCE=-5V Ta=25℃ -0.1 -300 -400 -500 -600 -700 -800 -900 -1000 -1100-1200 BASE-EMMITER VOLTAGE VBE (mV) PC COLLECTOR POWER DISSIPATION PC (W) 0.6 —— 10 -4.23 -10 COLLECTOR CURRENT -100 IC (mA) Ta 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 AMBIENT TEMPERATURE © SHENZHEN HOTTECH ELECTRONICS CO.,LTD Ta 125 150 (℃ ) E-mail:hkt@heketai.com 2/4 B772 BIPOLAR TRANSISTOR (PNP) SOT-89 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.550REF 0.061REF E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e 1.500TYP 0.060TYP e1 3.000TYP 0.118TYP L 0.900 1.200 0.035 0.047 SOT-89 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 3/4 B772 BIPOLAR TRANSISTOR (PNP) SOT-89 Tape and Reel SOT-89 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-89 4.85 4.45 1.85 Ø1.50 1.75 5.50 4.00 8.00 2.00 12.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-89 Tape Leader and Trailer SOT-89 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 13.20 16.50 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 4/4