S8205A

S8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES Low on-resistance:VDS=20V,ID=5A,RDS(ON)≤25mΩ@VGS=4.5V Low gate charge For synchronous rectifier applications Surface Mount device     SOT-23-6 MECHANICAL DATA  Case: SOT-23-6  Case Material: Molded Plastic. UL flammability  Classification Rating: 94V-0  Weight: 0.3 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Drain-source voltage Gate-source voltage Continuous drain current @TA = 25°C Pulsed drain current Power dissipation Thermal resistance from Junction to ambient Junction and Storage temperature Range Symbol VDS VGS ID IDM PD RθJA TJ,TSTG Value 20 ±12 5 25 1.25 100 -55 ~+150 Unit V V A A W °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter STATIC CHARACTERICTISCS Drain-Source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate-threshold voltage Drain-source on-resistance Symbol Min V(BR)DSS* 20 IDSS* IGSS* VGS(th)* 0.5 RDS(ON)* gFS Forward transconductance DRAIN-SOURCE DIODE CHARACERISTICS Diode forward voltage VSD DYNAMIC CHARACTERICTISCS Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss SWITCHING CHARACTERICTISCS Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time tf Typ Max Unit 1 ±100 1.0 25 40 V μA nA V mΩ mΩ S 1.28 V IS=1.7A, VGS=0V 800 155 125 pF pF pF VDS=8V, VGS=0V, f=1MHz 11 2.2 2.5 18.3 4.8 43.5 20 nC nC nC nS nS nS nS 0.8 22 38 13 0.42 Conditions VGS=0V, ID=250μA VDS=16V, VGS=0V VDS=0V, VGS=±12V VDS=VGS, ID=250μA VGS=4V, ID=5A VGS=2.5V, ID=4A VDS=5V, ID=5A VGS=4V,VDS=10V,ID=4A VDD=10V, ID=1.0A,VGEN=4V, RGEN=10Ω,RL=10Ω *Pulse test ; Pulse width